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$Al_2O_3$ 절연막을 게이트 절연막으로 이용한 공핍형 n-채널 GaAs MOSFET의 제조
전본근,이석헌,이정희,이용현,Jun, Bon-Keun,Lee, Suk-Hyun,Lee, Jung-Hee,Lee, Yong-Hyun 대한전자공학회 2000 電子工學會論文誌-SD (Semiconductor and devices) Vol.37 No.1
본 논문에서는 반절연성 GaAs 기판위에 $Al_2O_3$ 절연막이 제이트 절연막으로 이용된 공핍형보드 n형 채널 GaAs MOSFET(depletion mode n-channel GaAs MOSFET)를 제조하였다. 반절연성 GaAs 기판위에 1 ${\mu}$m의 GaAs 버퍼층, 1500 ${\AA}$의 n형 GaAs층, 500 ${\AA}$의 AlAs층, 그리고 50 ${\AA}$의 캡층을 차례로 성장시키고 습식열산화 시켰으며, 이를 통하여 AlAs층은 완전히 $Al_2O_3$층으로 변환되었다. 제조된 MOSFET의 I-V, $g_m$, breakdown특성 측정 등을 통하여 AlAs/GaAs epilayer/S${\cdot}$I GaAs 구조의 습식열산화는 공핍형 모드 GaAs MOSFET를 구현하기에 적합함을 알 수 있다. In this paper, we present n-channel GaAs MOSFET having $Al_2O_3$ as gate in insulator fabricated on a semi-insulating GaAs substrate. 1 ${\mu}$m thick undoped GaAs buffer layer, 1500 ${\AA}$ thick n-type GaAs, undoped 500 ${\AA}$ thick AlAs layer, and 50 ${\AA}$ GaAs caplayer were subsequently grown by molecular beam epitaxy(MBE) on (100) oriented semi-insulating GaAs substrate oxidized. When it was wet oxidized, AlAs layer was fully converted $Al_2O_3$. The I-V, $g_m$, breakdown charateristics of the fabricated GaAs MOSFET showed that wet thermal oxidation of AlAs/GaAs epilayer/S${\cdot}$I GaAs was suitable in realizing depletion mode GaAs MOSFET.
Al2O3 게이트 절연막을 이용한 공핍형 p-채널 GaAs MOSFET 의 제조
전본근(Bon Keun Jun),이태헌(Tae Hyun Lee),이정희(Jung Hee Lee),이용현(Yong Hyun Lee) 한국센서학회 1999 센서학회지 Vol.8 No.5
In this paper, we present p-channel GaAs MOSFET having Al₂O₃ as gate insulator fabricated on a semi-insulating GaAs substrate, which can be operated in the depletion mode. 1 hem thick undoped GaAs buffer layer, 4000 Å thick p-type GaAs epi-layer, undoped 500Å thick AlAs layer, and 50 Å thick GaAs cap layer were subsequently grown by molecular beam epitaxy(MBE) on (100) oriented semi-insulating GaAs substrate and this wafer was oxidized. AlAs layer was fully oxidized as a Al₂O₃ thin film. The I-V, g_m, breakdown charateristics of the fabricated GaAs MOSFET showed that wet thermal oxidation of AlAs/GaAs epilayer/S·I GaAs was successful in realizing depletion mode p-channel GaAs MOSFET.
보호용 실리콘 산화막을 이용하여 제조된 $Al_2O_3$ 예비층이 초박막 ${\gamma}-Al_2O_3$ 에피텍시의 성장에 미치는 영향
정영철,전본근,석전성,Jung, Young-Chul,Jun, Bon-Keun,Ishida, Makoto 한국센서학회 2000 센서학회지 Vol.9 No.5
In this paper, we propose the formation of an $Al_2O_3$ pre-layer using a protective Si-oxide layer and Al layer. Deposition of a thin film layer of aluminum onto a Si surface covered with a thin Si-oxide layer and annealing at $800^{\circ}C$ led to the growth of epitaxial $Al_2O_3$ layer on Si(111). And ${\gamma}-Al_2O_3$ layer was grown on the $Al_2O_3$ per-layer. Etching of the Si substrate by $N_2O$ gas could be avoided in the initial growth stage by the $Al_2O_3$ pre-layer. It was confirmed that the $Al_2O_3$ pre-layer was effective in improving the surface morphology of the very thin ${\gamma}-Al_2O_3$ films. 본 논문에서는 보호용 실리콘 산화층과 Al 층을 이용한 $Al_2O_3$ 예비층의 형성을 제안하였다. 실리콘 기판 위의 보호용 산화막 위에 알루미늄을 증착하고 이를 $800^{\circ}C$에서 열처리함으로써 에피텍시 $Al_2O_3$ 예비층 형성시킬 수 있었다. 그리고 형성된 $Al_2O_3$ 예비층위에 ${\gamma}-Al_2O_3$ 층을 형성하였다. ${\gamma}-Al_2O_3$막 성장시 공정의 초기 상태에서 발생하는 $N_2O$ 가스에 의한 Si 기판의 식각을 $Al_2O_3$ 예비층을 이용함으로써 방지할 수 있었다. $Al_2O_3$ 예비층이 초박막 ${\gamma}-Al_2O_3$의 표면의 형태를 개선하는데 많은 효과가 있었다.
0.35um BCD 공정을 이용한 700V Double Resurf LDMOS Transistor 구현
문남칠(Nam-Chil Moon),전본근(Bon-Keun Jun),권경욱(Kyung-Wook Kwon),이창준(Chang-Jun Lee),김종민(Jong-Min Kim),김남주(Nam-Joo Kim),유광동(Kwang-Dong Yoo) 대한전자공학회 2010 대한전자공학회 학술대회 Vol.2010 No.6
We have developed nLDMOS with over 800V BV based on 0.35um technology using Double RESURF (REduced SURface Field) technology without extra layers & Epi wafer. This device is applied to power switch and level shifter for HVIC such as LED lighting, motor control IC, etc. Also, this paper presents the optimization condition for wide RESURF region regarding a robust breakdown voltage and low specific on-resistance.
보호용 실리콘 산화막을 이용하여 제조된 Al2O3 예비층이 초박막 γ - Al2O3 에피텍시의 성장에 미치는 영향
정영철(Young Chul Jung),전본근(Bon Keun Jun),석전성(Makoto Ishida) 한국센서학회 2000 센서학회지 Vol.9 No.5
In this paper, we propose the formation of an Al₂O₃ pre-layer using a protective Si-oxide layer and AI layer. Deposition of a thin film layer of aluminum onto a Si surface covered with a thin Si-oxide layer and annealing at 800 ℃ led to the growth of epitaxial Al₂O₃ layer on Si(111). And γ-Alzoa layer was grown on the Alzoa per-layer. Etching of the Si substrate by N₂O gas could be avoided in the initial growth stage by the Alms pre-layer. It was confirmed that the Al₂O₃ pre-layer was effective in improving the surface morphology of the very thin γ-Al₂O₃ films.