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이정중 대한금속재료학회(대한금속학회) 1986 대한금속·재료학회지 Vol.24 No.7
For binary liquid aluminium alloys at infinite dilution, it is demonstrated that there exists a certain correlation between the partial enthalpies of mixing, ◎, and the partial excess entropies of mixing, ◎ This correlation is resulted from the fact that both ◎ and ◎ have similar contributing terms which are related with atomic interaction. With very few exceptions, the ◎ values are in accordance with the values calculated on the basis of the Miedema model. Furthermore, the ◎ values are observed to systematically depend on the atomic number. With the help of the Samsonov's consideration, this systematic dependence can be explained with the electronic structure of the elements.
텅스텐의 저압화학 증착 (LPCVD) 시 기체유입량이 증착층의 선택성과 면저항에 미치는 영향
이정중,류창섭,금동화,주승기 대한금속재료학회(대한금속학회) 1989 대한금속·재료학회지 Vol.27 No.11
A hot-wall type reactor has been designed for chemical vapor deposition at low pressure(LPCVD), and deposition of W on an oxide patterned Si-wafer has been studied. Utilizing scanning electron microscope and cross-sectional transmission electron microscopy, selective deposition of W only on the exposed Si surface has been confirmed. It has been observed that the microstructure of the W-film is strongly affected by flow rates, i.e., partial pressures of reaction gases(WF_6 H₂ and Ar). Fourpoint probe measurement of the thin film showed that porosity in the LPCVD W-film is one of major causes which increases sheet resistivity of the film, and the quantity of porosity is affected by reaction species and individual flow rates.
이정중 대한금속재료학회(대한금속학회) 1986 대한금속·재료학회지 Vol.24 No.9
막스 플랑크 金屬硏究所는 西獨 전역과 이태리, 불란서 等에 하나 씩 散在해 있는 막스 플랑크 協會(Max-Planck- Gesellschaft ) 所屬의 50여개 막스 플랑크 硏究所 中의 하나이므로 金屬硏究所를 紹介하기 前에 간단히 이 막스 플랑크 協會에 對해 먼저 언급하기로한다. 막스 플랑크 協會는 1911年에 自然科學 硏究活動을 後援하기 위해 세워진 빌헬름 황제 協會(Kaiser-Wilhelm-Gesellschaft)가 그 前身으로, 1948年부터 獨逸의 物理學者 막스 플랑크를 紀念하기 위하여 이 이름으로 改名되었다. 이 協會 산하의 各 硏究所에서 硏究되는 分野는 現在 自然科學 뿐아니라, 人文 ·社會科學 等모든 學問分野를 총 망라하고 있으며, 주로 未來 指向的인 基礎硏究가 重點的으로 수행되고 있다. 그에 따라 年間 약 4500억원(西獨政府가 科學 ·技術分野에 投資하는 예산의 약 5%)에 달하는 豫算의 96%를 聯邦政府 및 州政府가 각각 반씩 부담하고 있으며, 나머지 4%는 各種 寄附金과 노우하우, 特許, 라이센스의 판매에 의한 收入, 그리고 協會의 財産을 利用한 收入 等으로 충당된다. 總 職員數는 약 一萬名 정도이고, 이 중 4000名이 硏究員이며, 硏究員 中 반수가 博士學位과정의 學生과 外國의 科學者들로 構成되어 있다. 硏究所와 永久契約이 되어 있는 硏究員의 數는 극히 制限되어 있으며, 大部分의 硏究員은 一時契約에 따라 대개 2∼3年間 머무른 後, 다른 곳으로 직업을 얻어 나가게 된다. 50개의 막스 플랑크 硏究所 중에서 金屬 및 세라믹 材料에 직접 關聯된 硏究所로는 슈투트가르트(Stuttgart)의 金屬硏究所와 뒤셀도르프(Du¨sseldorf)의 鐵(鋼)硏究所가 있고, 間接的인 관련 硏究所로 슈투트가르트의 固體物理 硏究所( Institut fu¨r Festko¨rperphysik)가 있는데, 이 硏究所에서는 주로 非金屬, 特히 半導體 材料에 對한 硏究를 하고 있다.
액상 알루미늄 합금 내 Li 의 열역학적 성질에 관하여
이정중,Sommer,Ferdinand 대한금속재료학회(대한금속학회) 1986 대한금속·재료학회지 Vol.24 No.10
Vapor pressures of lithium over binary and ternary aluminium alloy melts were calculated on the basis of thermodynamic data for liquid binary aluminium and lithium alloys. According to the calculation the vacuum distillation method was found to be an inadequate way of elimination of lithium from aluminium melts. If the amounts of metallic impurities in the aluminium melts are less than 1 wt.%, they, on the contrary to hydrogen, do not change the vapor pressure of lithium significantly. The calculated interaction parameters, ε, which were used to obtain the vapor pressures of lithium over ternary alloys, showed a systematic dependence on the atomic number of respective i elements. It was assumed that this dependence is related to the properties of corresponding binary systems (i.e Al-Li. Li-i, Al-i), which form a ternary aluminium alloy(i.e.Al-Li-i).
정규회합체 모델을 이용한 액상 합금의 혼합엔탈피 계산에 관한 연구
이정중,김성진 대한금속재료학회(대한금속학회) 1994 대한금속·재료학회지 Vol.32 No.11
The concentration and temperature dependence of the mixing enthalpies of liquid Cu-Sb, Sb-Sn, Cu-Sn and Cu-Sb-Sn alloys could be described by the regular associate solution model. A new numerical method which uses the least square method and the Newton-Raphson method is proposed for the calculation of the model parameters. The calculation shows that the free energy of mixing of liquid Cu-Sb alloy can be much better described with CuSb and Cu₃Sb associates than with Cu₂Sb or Cu₃Sb associate alone. The mixing enthalpies of Cu-Sn-Sb alloy calculated with the assumption of four kinds of associates are in good agreement with the experimental data. By the calculation the model parameters are fixed using only the data of the three binary bordering systems.
플라즈마 화학기상증착법으로 제조된 (Ti1-xAlx) N 박막의 기계적 특성과 열처리 효과
이정중,박상협 대한금속재료학회(대한금속학회) 1997 대한금속·재료학회지 Vol.35 No.1
Adhesion strength and microhardness of (Ti_(1-x)Al_x)N coatings made by plasma enhanced chemical vapor deposition technique were investigated and the effect of heat treatment was characterized. The critical load of the (Ti_(1-x)Al_x)N coating to substrate was higher than 50N for X<0.15 and it decreased below 10N for X>0.15. Using 0.5 ㎛ thick TiN interlayer beneath (Ti_(1-x)Al_x)N coating, the adhesion strength could be improved. The residual chlorine content in the coating degraded the Knoop microhardness from 6500 to 1500 ㎏/㎟. The heat treatment at 1000℃ increased the microhardness due to the removal of the residual chlorine and the AlN precipitation. Residual stress of the coating from the difference of thermal expansion coefficient caused crack in coated layer, which was beneficial to improve the adhesion strength. In TiN and (Ti_(1-x)Al_x)N/TiN coatings, however, crack could not be observed after heat treatment, and the adhesion strength of the films did not change either.
이정중,윤호철,금동화 대한금속재료학회(대한금속학회) 1992 대한금속·재료학회지 Vol.30 No.8
CVD blanket tungsten films have been formed by the hydrogen reduction of WF_6 in a high pressure regime (10∼20 torr) at temperatures of 300∼400℃. The effects of pressure and reaction temperature on the deposition rate and the characteristics of the films were investigated. The deposition rate of tungsten increased with the total pressure in the reactor at pressures below 40 torr, while it decreased when the total pressure exceeded 40 torr. The deposition rate also showed a maximum value at 360℃ regardless of the pressure. Films with a good step coverage have been also formed at 40 torr and 360℃. It was found that the deposition mechanism changes with pressure and temperature : at low pressures and low temperatures, surface reaction determines the overall reaction rate, while at high pressures(>40 torr) and high temperature(>360℃), the deposition is controlled by the transportation of reactive gas molecules.