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새로운 전사방법을 활용한 MoS₂/WSe₂ 이종접합 PN 다이오드 제작과 특성에 관한 연구
김상현(Sang-Hyun Kim),김태봉(Tae-bong Kim),윤창민(Chang-Min Yun),정상민(Sang-Min Jung) 대한전자공학회 2022 대한전자공학회 학술대회 Vol.2022 No.11
A stable transfer method is required to make a two-dimensional material PN junction diode. We have developed a new transfer method to stably fabricate two-dimensional materials PN junction diode. The disadvantages of dry transfer method and wet transfer method were refined by mixing the existing transfer methods: dry transfer method and wet transfer method. At the new transfer method, we coat WSe2 with a PC solution and take it off using PDMS and tape. And it is arrayed to put it on MoS2 through an optical microscope. When measuring MoS2/WSe2 heterojunction samples made by the new transfer method by Raman spectroscopy, we could confirm both MoS2 peak and WSe2 peak were red-shifted. Also, at the I-V measurement, we could confirm the current flow three times more when it was forward biased than that of reverse biased. Consequently, we could get stable MoS2/WSe2 yield with a new transfer method and the physical properties of MoS2/WSe2. We are expecting that the new transfer method can be extended to other two-dimensional materials and will help fabricate various two-dimensional heterojunction structures.