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초고속 광통신용 Avalanche photodiode의 제작 및 특성에 관한 연구
유지범,박찬용 成均館大學校 科學技術硏究所 1994 論文集 Vol.45 No.2
We review the characteristics of Avalache photodiode(APD) for long haul and high bit- rate optical fiber communication system including basic operating principle, excess noise factor, and bandwidth, and we also summarize recent progress. Separate absorption garding, charge and multiplication APD with charge plate layers instead of guard ring was designed and fabricated using metalorganic chemical vapor deposition and reactive ion etching technique. APD shows 37∼48V of breakdown voltage and very low dark current less than 10 nA at 90% of breakdown voltage. Receiver consisting of APD and Ga As pre - amplifier shows sensitivity of - 33.6dBm in the application of the pseudorandom 2^23-1 non- returen- to- zero(NRZ) patterns at 10^-9 bit error rate(BER).
유기금속증착법에 의한 $IN_1-x$$Ga_x$$As_y$$P_1-y$/INP의 성장시 성장변수가 에피층의 전기적, 광학적 특성에 미치는 영향
유지범,김정수,장동훈,박형호,오대곤,이용탁,Yu, Ji-Beom,Kim, Jeong-Soo,Chang, Dong-Hun,Park, Hyung-Ho,Oh, Dae-Gon,Lee, Yong-Tak 한국전자통신연구원 1991 전자통신 Vol.13 No.4
$In_1-x$$GA_X$$As_y$$P_1-y$ has a very wide range of applications in optoelectronic devices especially for optical communications because $In_1-x$$GA_X$$As_y$$P_1-y$ has the bandgap of the lowest dispersion ($1.3\mum$) and the lowest loss ( $1.55\mum$) of the optical fiber by changing the composition. The quality of $In_1-x$$GA_X$$As_y$$P_1-y$ epitaxial layer is believed to have a significant effect on the performance of device. The OMVPE growth conditions for the latticematched $In_1x$$GA_X$$As_y$$P_1-y$/InP were investigated. Effects of growth conditions such as V/III ratio, growth temperature, and Ga source material on the electrical and optical properties were studied. The composition, electrical and optical properities of $In_1-x$$GA_X$$As_y$$P_1-y$ were characterized using double crystal X-ray diffractometer (DCD), photoluminescence (PL), XPS(ESCA) and Hall measurement.
유지범(J. B. Yoo),박찬용(C. Y. Park),박경현(K. H. Park),강승구(S. K. Kang),송민규(M. K. Song),오대곤(D. K. Oh),박종대(J. D. Park),김흥만(H. M. Kim),황인덕(I. D. Hwang),박형무(H. M. Park),윤태열(T. Y. Yoon),이창희(C. H. Lee),심창섭(C. S. Sh 한국광학회 1994 한국광학회지 Vol.5 No.2
2.5 Gbps 광통신시스템용 수광소자로서 charge plate층을 갖는 링구조의 separate absorption grading multiplication Avalanche photodiode를 제작하고 그 특성을 조사 분석하였다. Avalanche Photodiode의 제작은 Metal-Organic Chemical Vapor Deposition과 Liquid Phase Epitaxy법을 이용한 에피성장과, Br: Methanol을 이용한 채널식각 방법을 사용하였고, passivation과 평탄화는 photosensitive polyimide를 이용하였다. 제작된 APD는 10 ㎁ 이하의 작은 누설전류를 나타내었고, -38~39V의 항복전압을 나타내었다. 제작된 APD를 GaAs FET hybrid 전치증폭기와 결합하여 2.5 Gbps 속도에서 2²³-1의 길이를 갖는 입력 광신호에 대해 10^(-10) Bit Error Rate에서 -31.0 dBm의 수신감도를 얻었다. We fabricated and characterized the InGaAs separate absorption, grading and multiplication (SAGM) Avalanche photodiode (APD) with a chrage plate layer. Channel was employed for the isolation of the active area of APD. Metal-organic chemical vapor deposition (MOCVD) and liquid phase epitaxy (LPE) were used for the epitaxial growth. Channel was formed using wet etching technique. Photosensitive polyimide was used for the passivation and planarization of the device. APD shows very low leakage current smaller than 10 ㎁ and -38~39 V of breakdown voltage. Optical receiver consisting of APD and GaAs FET pre-amplifier shows the sensitivity of -31.0 dBm at 10^(-10) BER (Bit Error Rate) and 2.5 Gbps optical random signal of 2²³-1 in length.