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$ZnS_{0.24}Se_{0.76}$의 photoreflectance 특성 연구
유재인,김동렬,이제훈,Yu J. I.,Kim D. L.,Lee J. H. 한국레이저가공학회 2004 한국레이저가공학회지 Vol.7 No.3
In this research, we investigated the characteristic of $ZnS_{0.24}Se_{0.76}/GaAs$ heterostructure by using photoreflectance sprctroscopy(PR). The oscillations observed above the 1.43 eV range were attributed Franze-Keldysh effect. The interface electric filed of $GaAs/ZnS_{0.24}Se_{0.76}\;is\;2.153{\times}104\;V/cm$.
Mg Alloy의 Burning과 Plasma Electrolyte Oxidation 표면처리에 대한 연구
유재인,최순돈,장호경,Yu, Jae-In,Choi, Soon-Don,Jang, Ho-Kyeoung 한국진공학회 2010 Applied Science and Convergence Technology Vol.19 No.5
Plasma electrolyte oxidation (PEO) 표면처리된 Mg 합금을 scanning electron microscopy (SEM) 방법으로 표면에 형성된 산화 막을 조사 분석하였다. 측정은 상온에서 수행하였다. Burning 및 PEO 방식의 표면처리 방법을 통해 제작 된 시료의 산화막을 SEM, EDS 및 I-V 측정을 통해 분석하였다. 그 결과 burning 방식의 표면처리가 PEO보다 내식성이 떨어지는 단점이 있지만, 전도성이 부여되는 결과를 나타낸다. The surface oxidation of magnesium was performed by burning and PEO treatment method. The scanning electron microscopy (SEM), EDS, and I-V characteristics have been applied to the study of the oxidation status. The sample formed by buring method shows weaker corrosion-resistant property than that by PEO method, but this shows more conducting property.
플라즈마 전해 산화 표면처리 된 AZ31B 소재의 표면 조도 및 광학적 특성연구
유재인,윤주식,윤재곤,김진희,최순돈,유재용,장호경,김기홍,Yu, Jae-In,Yun, J-S,Yoon, Jae-Gon,Kim, Jin-Hi,Choi, Soon-Don,Yu, Jae-Yong,Jang, Ho-Kyeoung,Kim, Ki-Hong 한국레이저가공학회 2013 한국레이저가공학회지 Vol.16 No.4
The surface oxidation of magnesium was performed by Plasma electrolytic oxidation treatment method. And the optical reflectance spectra of the oxidation layers are studied. In the PEO process, the growth of the oxide layer take place at room temperature. Surface roughness of the obtained result, the average surface roughness is $0.08{\mu}m$ difference. The reason seems to the influence of the $Na^+$.
Fe가 오염 된 n-GaAs의 Photoreflectance 특성 연구
유재인,김기홍,이동율,배인호,문영희 한국물리학회 2004 새물리 Vol.49 No.1
n-GaAs 표면위에 Fe가 오염 후 열처리 된 샘플에 대해 PR 방법으로 조사하였다. 샘플은 10 분간 300 에서 600 $^\circ$C까지 열처리 한 샘플과 300 $^\circ$C에서 10에서 60 분간 열처리 한 샘플로 준비하였다. 10 분간 300 에서 600 $^\circ$C까지 열처리 한 샘플의 PR신호에서, n-GaAs의 경우는 49 \%인데 비해 Fe를 표면 오염시킨 n-GaAs는 66 \%로 더 크다. 이는 Fe가 표면 오염된 시료에서 Fe가 열처리 효과로 인해 내부로 확산(diffusion)됨에 의해서 Fe$^{+3}$가 이온으로 되므로 인해서 중성 억셉터 작용을 하기 때문으로 사료된다. We investigated the variation of the photoreflectance (PR) signals for n-GaAs surface treated with Fe and annealed. The samples were annealed by using the isochronal (200 $\sim$ 600 $^\circ$C, 10 min) and the isothermal(300 $^\circ$C, 10 $\sim$ 60 min) methods. The PR signals measured from the isochronally annealed samples showed intensity reductions of 49 \% for n-GaAs and 66 \% for Fe-treated n-GaAs We assume that the large decrease in intensity for the Fe- contaminated sample was caused by a decrease in the carrier density due to the increasing number of Fe$^{3+}$ neutral acceptors at higher annealing temperature. The PR signals measured from isothermally annealed n-GaAs samples, decreased with increasing annealing time, and the signals for n-GaAs surface treated with Fe increased continuously with increasing annealing time. It can be assumed that the increasing PR intensity with annealing time for Fe-c ontaminated samples is due to a diffusion of Fe atoms from the surface.
Al0.21Ga0.79As/GaAs 와 Si3N4/Al0.21Ga0.79As/GaAs 이종접합구조의 Photoreflectance 특성 연구
유재인,배인호 한국물리학회 2004 새물리 Vol.49 No.1
Photoreflectance (PR) was measured to investigate the characteristices of Si$_3$N$_4$/Al$_{0.21}$Ga$_{0.79}$As\\/GaAs and Al$_{0.21}$Ga$_{0.79}$As/GaAs heterostructures. In the PR spectrum of the sample with a 170-nm-thick caping layer of Si$_3$N$_4$ the ``C'' peak was confirmed as being due to a residual carbon impurity defect. After the sample with the Si$_3$N$_4$ caping layer had beeb annealed, the band gap energy was shifted toward low energy. This result showed that the Si$_3$N$_4$ cappign layer controlled the evaporation of As. Si$_3$N$_4$/Al$_{0.21}$Ga$_{0.79}$As/GaAs와 Al$_{0.21}$Ga$_{0.79}$As/GaAs 이종접합구조 특성을 조사하기 위하여 Photoreflectance(PR) 방법으로 측정하였다. Si$_3$N$_4$ cap 층이 170 nm인 PR 스펙트럼에서, C 피크 신호는 시료 성장시 존재하는 불순물 carbon에 의한 것이다. 그리고 시료를 열처리를 했을 경우, Si$_3$N$_4$ cap 층이 존재할 때는 밴드갭 에너지의 이동이 적었다. 이러한 결과는 Si$_3$N$_4$ cap 층이 As의 evaporation를 억제하는 역할을 한다고 할 수 있다.
MBE법으로 성장한 ZnSe/GaAs 이종접합구조의 Photoreflectance 연구
유재인,배인호,손정식,김대년,김기홍,이승준 한국물리학회 2004 새물리 Vol.49 No.3
Using photoreflectance (PR), we investigated characteristics of ZnSe epilayers grown on SI-GaAs by using molecular beam epitaxy MBE). From the PR spectrum at room temperature, we observed the band gap energies of GaAs and ZnSe. From the Franze-Keldysh Oscillations(FKOs), we evaluated the interface electric field. In addition, the transition energy of ZnSe were observed to 2.6225 and 2.6684 eV for $E_{HH}$(heavy hole) and $E_{LH}$(light hole),respectively. 반절연성 GaAs 위에 분자선 에피텍시 (MBE)법으로 성장된 ZnSe 에피층의 특성을 광변조 분광(PR)법을 이용하여 연구 하였다. 상온에서 측정된 PR 스펙트럼에서 GaAs와 ZnSe의 밴드갭 에너지와 관측된 FKOs로부터 계면 전기장을 구하였다. 또한 상온에서 측정한 PR 스펙트럼에서 관측된 ZnSe의 {E}$_{HH}$와 {E}$_{LH}$의 전이 에너지는 각각 2.623와 2.669 eV 였다. 주파수 의존성에서 주파수가 낮을수록 시료내부에 들어가는 광량이 현저히 낮아지기 때문에 GaAs 관련 피크세기의 감소율이ZnSe의 감소율 보다 약 20 \% 더 크게 관측되었다.
유재인 가톨릭대학산업의학센타 산업의학연구소 1984 韓國의 産業醫學 Vol.23 No.1
Using the simple technique of transtracheal aspiration(TTA)in patients with chronic bronchitis,bacteria were found in 11 transtracheal aspirates from 14 patients. From 3 aspirates no bacteria were isolated.In 11 aspirates the isolated bacterium grew in pure culture. This preliminary report indicates that the bacterial flora in this condition is more complicated than hitherto appreciated.
유재인,최순돈,장호경 대한전기학회 2011 Journal of Electrical Engineering & Technology Vol.6 No.4
The electromodulation methods of photoreflectanceand the related technique of contactless electroreflectance(CER) are valuable tools in the evaluation of important device parameters for structures such as heterojunction bipolar transistors, pseudomorphic high electron mobility transistors, and quantum dots(QDs). CER is a very general principle of experimental physics. Instead of measuring the optical reflectance of the material, the derivative with respect to a modulating electric field is evaluated. This procedure generates sharp, differential-like spectra in the region of interband (intersubband) transitions. We conduct electric-optical studies of both GaAs layers and InAs selfassembled QDs grown by molecular beam epitaxy. Strong GaAsbandgap energy is measured in both structures. In the case of lnAs monolayers in GaAs matrices, the strong GaAsbandgap energy is caused by the lateral quantum confinement.
Al_(0.24)Ga_(0.76)As/GaAs HEMT 구조에서의 표면 광전압에 관한 연구
유재인,김종수,배인호,신영남,박성배 대구대학교 기초과학연구소 2000 基礎科學硏究 Vol.16 No.2
We report a surface photovoltage(SPV) study of Al_(0.24)Ga_(0.76)As/GaAs HEMT structure grown by molecular beam epitaxy. The energies of Eo transition for GaAs and Al_(0.24)Ga_(0.76)As were 1.41 and 1.71 eV, respectively. These values were in good agreement with photo reflectance(PR) measurement. As the frequency is increased from 25 to 55 Hz, the intensity of SPV signal is gradually reduced. Meanwhille, the intensity of SPV signal gradually increased as the temperature increased from 100 K to room temperature. From the former, the surface photovoltage of Al_(0.24)Ga_(0.76)As layer is 8.61 mV, which is about 1.4 times smaller than that of GaAs. This is due to influence of carrier mobility.