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오남근,김진태,안종기,강고루,김소연,윤주영 한국진공학회 2016 Applied Science and Convergence Technology Vol.25 No.3
The ALD process is an adequate technique to meet the requirements that come with the downscaling of semiconductor devices. To obtain thin films of the desired standard, it is essential to understand the thermal decomposition properties of the precursors. As such, this study examined the thermal decomposition properties of TEMAHf precursors and its effect on the formation of HfO2 thin films. FT-IR experiments were performed before deposition in order to analyze the thermal decomposition properties of the precursors. The measurements were taken in the range of 135oC-350oC. At temperatures higher than 300oC, there was a rapid decrease in the absorption peaks arising from vibration of Sp3 C-H stretching. This showed that the precursors experienced rapid decomposition at around 275oC- 300oC. HfO2 thin films were successfully deposited by Atomic Layer Deposition (ALD) at 50oC intervals between 150oC to 400oC; the deposited films were characterized using a reflectometer, X-ray photoelectron spectroscopy (XPS), Grazing Incidence X-ray Diffraction (GIXRD), and atomic force microscopy (AFM). The results illustrate the relationship between the thermal decomposition temperature of TEMAHf and properties of thin films.