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엄금용,오환술 건국대학교 1997 學術誌 Vol.41 No.2
Tungsten polycide has studded gate oxide reliability and dielectric strength charactristics as the composition of gate electrode. The gate oxide reliability has been tested using the TDDB (Time dependent dielectric breakdown) and SCTDDB (stepped current TDDB) and interface trapped characteristics has been tested using C-V plot. It was confirmed that tungsten polycide layer is a better reliabily properities than polysilicon layer. Also, hole trap is detected on the polysilicon structure on the other hand electron trap is detected on polycide structure. In the case of electron trap, the WSi₂ layer is larger interface trap generation than polysilicon on large pocl3 doping time and high pocl₃ doping temperature condition. Breakdown characteristics of than dielectric is the most high quality at 850℃ 30min, 900℃ 20min on polycide structure in the meanwhile A, B mode (allure is the most small at the same condition. Also flatband voltage shift is slowly increase with larger pocl₃ doping time.