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The effects of benzene and toluene on leukotactin-1-induced migration of EoL-1 cells
송보배,양은주,김보미,이지숙,윤치영,임양빈,김인식 대한독성 유전단백체 학회 2011 Molecular & cellular toxicology Vol.7 No.2
Benzene and toluene are volatile organic compounds (VOCs) that are produced from various building materials and may lead to sick building syndrome. In addition, these materials exert cytotoxic and carcinogenic effects in immune cells. To understand the effects of VOCs on immunological regulation, we investigated the effects of VOCs on cell migration in response to CC chemokines such as leukotactin-1 (Lkn -1), monocyte chemoattractant protein-1 (MCP-1),eotaxin, MIP-1α and RANTES in human eosinophilic leukemia EoL-1 cells. VOCs exerted no cytotoxicity against EoL-1 cells at concentrations ranging from 0.1 μM to 50 μM. A chemotaxis assay was conducted to evaluate the cell movement. The assay revealed that benzene and toluene differentially increased the migration of EoL-1 cells in response to Lkn-1, but not MCP -1, eotaxin, MIP-1α or RANTES. The expression of CCR1 and CCR3 binding to Lkn-1 were not altered by benzene and toluene. Additionally, the increased cell migration due to benzene and toluene was inhibited by PD98059, SB202190 and SP600125. Benzene and toluene also induced the phosphorylation of ERK,p38 mitogen-activated protein kinase (p38 MAPK) and JNK in a time-dependent manner. Overall, benzene and toluene influenced Lkn-1-induced migration of human eosinophilic cells via activation of MAPKs. These results suggest that benzene and toluene play a role as risk factors in the regulation of immune response. Furthermore,these findings provide a role for VOCs in the immunological processes involved in indoor air pollution-induced diseases.
송보배,이병석,양일석,구용서 한국전자통신연구원 2017 ETRI Journal Vol.39 No.5
In this paper, an electrostatic discharge (ESD) protection circuit is designed for use as a 12 V power clamp by using a parasitic-diode-triggered silicon controlled rectifier. The breakdown voltage and trigger voltage (Vt) of the proposed ESD protection circuit are improved by varying the length between the n-well and the p-well, and by adding n+/p+ floating regions. Moreover, the holding voltage (Vh) is improved by using segmented technology. The proposed circuit was fabricated using a 0.18-lm bipolar-CMOS-DMOS process with a width of 100 lm. The electrical characteristics and robustness of the proposed ESD circuit were analyzed using transmission line pulse measurements and an ESD pulse generator. The electrical characteristics of the proposed circuit were also analyzed at high temperature (300 K to 500 K) to verify thermal performance. After optimization, the Vt of the proposed circuit increased from 14 V to 27.8 V, and Vh increased from 5.3 V to 13.6 V. The proposed circuit exhibited good robustness characteristics, enduring human-body-model surges at 7.4 kV and machine-model surges at 450 V.
Wide-Input Range Dual Mode PWM / Linear Buck Converter with High robustness ESD Protection Circuit
송보배,구용서 대한전자공학회 2015 Journal of semiconductor technology and science Vol.15 No.2
This paper proposes a high-efficiency, dual-mode PWM / linear buck converter with a wide-input range. The proposed converter was designed with a mode selector that can change the operation between PWM / linear mode by sensing a load current. The proposed converter operates in a linear mode during a light load and in PWM mode during a heavy load condition in order to ensure high efficiency. In addition, the mode selector uses a bit counter and a transmission gate designed to protect from a malfunction due to noise or a time-delay. Also, in conditions between -40 °C and 140 °C, the converter has variations in temperature of 0.5mV/°C in the PWM mode and of 0.24 mV/°C in the linear mode. Also, to prevent malfunction and breakdown of the IC due to static electricity, the reliability of IC was improved by embedding a self-produced 8 kV-class(Chip level) ESD protection circuit of a P-substrate Triggered SCR type with high robustness characteristics.
스텍 구조를 이용한 향상된 스냅백 특성을 갖는 ESD 보호회로 설계
송보배(Bo-Bae Song),이재학(Jea-Hack Lee),김병수(Byung-Soo Kim),김동순(Dong-Sun Kim),황태호(Tae-Ho Hwang) 한국전기전자학회 2021 전기전자학회논문지 Vol.25 No.2
본 논문에서는 스냅백 특성을 개선시키기 위해 일반적인 SCR의 구조적 변경 및 Stack 기술을 적용한 새로운 구조의 ESD 보호회로를 제안한다. 펜타-웰과 더블 트리거를 이용한 구조에 대한 전기적 특성을 분석하고 Stack 구조를 적용해 트리거 전압과 홀딩 전압을 개선하였다. 시뮬레이션을 통한 전자 전류와 총 전류 흐름을 분석 하였다. 이를 통해 레치-업 면역 특성과 우수한 홀딩전압 특성을 확인 하였다. 제안된 ESD 보호회로의 전기적 특성은 TCAD 시뮬레이터를 통해 구조를 형성하고 HBM 모델링을 통해 분석 하였다. In this paper, a new ESD protection circuit is proposed to improve the snapback characteristics. The proposed a new structure ESD protection circuit applying the conventional SCR structural change and stack structure. The electrical characteristics of the structure using penta-well and double trigger were analyzed, and the trigger voltage and holding voltage were improved by applying the stack structure. The electron current and total current flow were analyzed through the TCAD simulation. The characteristics of the latch-up immunity and excellent snapback characteristics were confirmed. The electrical characteristics of the proposed ESD protection circuit were analyzed through HBM modeling after forming a structure through TCAD simulator.