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대면적 저누설 커패시터를 위한 최적화 블레이드 코팅 기반 고분자 유전체 프린팅
서경호 ( Kyeong-ho Seo ),배진혁 ( Jin-hyuk Bae ) 한국센서학회 2021 센서학회지 Vol.30 No.1
We demonstrated a polymer dielectric with low leakage characteristics through an optimal blade coating method for low-cost and large-scale fabrication of metal-insulator-metal (MIM) capacitors. Cross-linked poly(4-vinylphenol) (C-PVP), which is a typically used polymer dielectric, was coated on a 10 × 10 cm indium-tin-oxide (ITO) deposited glass substrate by changing the deposition temperature (T<sub>D</sub>) and coating velocity (V<sub>C</sub>) in the blade coating. During the blade coating, the thickness of the thin c-PVP varied depending on T<sub>D</sub> and V<sub>C</sub> owing to the ‘Landau-Levich (LL) regime’. The c-PVP-dielectric-based MIM capacitor fabricated in this study showed the lowest leakage current characteristics (10<sup>-6</sup> A/cm<sup>2</sup> at 1.2MV/cm<sup>2</sup>, annealing at 200 °C) and uniform electrical characteristics when TD was 30 °C and V<sub>C</sub> was 5mm/s. In addition, at T<sub>D</sub> = 30 °C, stable leakage characteristics were confirmed when a different electric field was applied. These results are expected to positively contribute to applications with next-generation electronic devices.
고유전율 절연체를 활용한 저 전압 유연 유기물 박막 트랜지스터
김재현 ( Jae Hyun Kim ),배진혁 ( Jin Hyuk Bae ),이인호 ( In Ho Lee ),김민회 ( Min Hoi Kim ) 한국센서학회 2015 센서학회지 Vol.24 No.3
We demonstrated low-voltage organic thin-film transistors (OTFTs) with bilayer insulators, high-k polymer and low temperature crosslinkable polymer, on a flexible plastic substrate. Poly (vinylidene fluoridetrifluoroethylene) (P(VDF-TrFE)) and poly (2-vinylnaphthalene) are used for high-k polymer gate insulator and low temperature crosslinkable polymer insulators, respectively. The mobility of flexible OTFTs is 0.17 cm(2)/Vs at gate voltages -5 V after bending operation.