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ITO 기판위에 증착시킨 PLT 박막의 특성 및 그 응용
배승춘,박성근,최병진,김기완 ( Seung Choon Bae,Sung Kun Park,Byung Jin Choi,Ki Wan Kim ) 한국센서학회 1997 센서학회지 Vol.6 No.5
We fabricated PLT thin films on ITO substrate for flat pannel display and investigated the characteristics, then we applicated to electroluminescent device and investigated application possibility. When we fabricated PLT thin films with substrate temperature of 500℃, and pressure of 30 mTorr, the relative deielectric constant and breakdown electricfield of PLT thin films were 120 and 3.21MV/cm. The electric resistivity was 2.0x10^(12)Ω·cm. PLT thin films had polycrystal structure of perovslcite and pyrochlore at the higher substrate temperature than 4;i0 `C, and had good crystallinity at higher pressure. To use PLT insulator film and ZnS:Mn phosphor, we fabricated thin film electroluminescent device of ITO/PLT/ZnS:Mn/PLT/AI structure. At the result, threshold voltage was 35.2V_(max) and brightness was 2400cd/㎠ at 50V_(max) and 1kHz. Maximum luminescence efficiency was 0.811m/W.
배승춘,김영진,최규만,김기완 대한전자공학회 1994 전자공학회논문지-A Vol.31 No.9
BaTiO$_{x}$ thin film as insulator and ZnS:Mn film as phosphour layer for thin film electrouminescent device have been deposited by thermal evalporation and dependence of electrical and opeical characeristics have been studied. The optimum deposition conditions for the BaTiO$_{x}$ thin film are such that BaTiO$_{3}$/TiO$_{2}$ mixing ratio was 0.7, sub strate temperature was 100 $^{\circ}C$ and annealing time was 1 hour at 300 $^{\circ}C$. In this case, the dielectric constant of BaTiO$_{x}$ thin film fabricated under those optimum conditions was 26, and for AnS:Mn thin films, the crystallization was done well and the deposition rate was 1300 $\AA$/min when substrate temperature was 200$^{\circ}C$. Thin film Electroluminescent devices were fabricated using BaTiO$_{x}$ and AnS:Mn thin films. The luminescence threshold voltage of device was 41.5 V and brightness was 1.2${\mu}W/cm^{2}$ at appied voltage of 50 V.
배승춘,김정환,김호운,박성근,김기완 경북대학교 센서기술연구소 1997 센서技術學術大會論文集 Vol.8 No.1
PLT and PLZT feroelectric thin films were fabricated on ITO substrate by rf magnetron sputtering. Pressure was 30mTorr, rf power was 180W and substrate temperature was varied from room temperature to 500℃. In this case, PLT had the highest dielectric constant of 120 at 500 ℃, oppositly PLZT had the highest dielectric constant of 312 at room temperature. I-V characteristics of PLZT film were shown that leakage current of PLZT film deposited at room temperature was below 3μA at 100V.
배승춘(Seung Choon Bae),김정환(Jeong Hwan Kim),박성근(Sung Kun Park),권성렬(Sung Yul Kwun),김우현(Woo Hyun Kim),김기완(Ki Wan Kim) 한국센서학회 1999 센서학회지 Vol.8 No.1
White emission thin film electroluminescent device was fabricated using ZnS for phosphor layer and BST ferroelectric thin film for insulating layer. For fabrication conditions of BST thin film, stoichiometry of target was Ba_90.5)Sr_(0.5)TiO₃, substrate temperature was 400 ℃, working pressure was 30 mTorr, and Ar:O₂ ratio was 9:1. At this time, dielectric constant was 209 at 1kHz frequency. For phosphor layer ZnS:Mn, ZnS:Tb, and ZnS:Ag were used. Mixing rates of activators were respectively 0.8, 0.8, and 1 wt%. Total thickness of phosphor layers was 500 nm, thickness of lower insulating layer was 200 nm, and thickness of upper insulating layer was 400 nm. In this conditions, luminescence threshold voltage of thin film electroluminescent device was 95 V_(rms), maximum brightness was 3,000 cd/㎡ at 150 V_(rms). Luminescence spectrum peak was observed at region of blue(450 nm), green(550 nm), and red(600 nm).
PLT ( PbLaTiO3 ) 초전재료 개발 ( 2 )
박성근,배승춘,김기완 ( Sung Kun Park,Seung Choon Bae,Ki Wan Kim ) 한국센서학회 1997 센서학회지 Vol.6 No.6
We fabricated the ceramic PLT tablet which was composed of 5, 10 and 15 mold lanthanum concentration and thin film PLT to develope pyroelectric materials, and investigated their characteristics. Using TG/DTA, we determined calcination and sintering temperature to sinter the PLT completely and to prevent volatilization of the Pb components. The calcination and sintering temperature were 850℃, 1150℃ respectively, end there was a lot of mass loss at higer sintering temperature. By measuring temperature-dielectric constant characteristics of ceramic tablet we investigated dielectric constant characteristics depends on La concentration. The Curie point of PLT with 5, 10 and 15 mol% lanthanum concentration were 330℃, 269℃ and 210℃ respectively. Using PLT cerarnie tablet we observed IR detection characteristics, and then deposited PLT thin film by rf magnetron sputtering. We verified that PLT thin film fabricated with completely sintered PLT target had the same structure to target by investigating lattice constant and optical transparency.
TFELD 절연층을 위해 ITO glass위에 증착된 (Ba_(0.5),Sr_(0.5))TiO₃박막의 특성
김정환,배승춘,권성렬,정훈,박진우,김기완 경북대학교 센서기술연구소 1998 센서技術學術大會論文集 Vol.9 No.1
We have studied that dielectric and electrical properties of (Ba_(0.5),Sr_(0.5))TiO_(3) thin films deposited on Indium Tin Oxide-coated glass substrate by using rf-magnetron sputtering method in this paper. Substrates were heated at room, 300℃ , 400℃, and 500℃. Working pressure was changed 5mTorr, 10mTorr, 20mTorr, 30mTorr respectively substrates temperature, and Ar:O_(2), ratio was fixed 9:1. SEM analysis was conducted to investigate thickness of BST thin films. Dielectric constant, current-voltage(I-V), and transmittance were measured. We observed difference of that thickness, dielectric constant, current-voltage(I-V), and transmittance due to variable substrates temperature and working pressure. We also obtained best conditions at 400℃, 30mTorr. Dielectric constant was 209.1 at 1kHz, leakage current density was below 7.35X10^(-7)A/cm^(2) at 100V, and transmittance was over 91%.
PLT($PbLaTiO_{3}$) 초전재료 개발(II)
박성근,배승춘,김기완,Park, Sung-Kun,Bae, Seung-Choon,Kim, Ki-Wan 한국센서학회 1997 센서학회지 Vol.6 No.6
초전재료의 개발 및 박막화를 위하여 5, 10 및 15 mol%의 La 조성을 가지는 세라믹 PLT 시편 및 박막 PLT를 제조하여 그 특성을 분석하였다. PLT의 완전 소결과 Pb 성분의 휘발을 막기 위하여 TG/DTA를 사용하여 하소 및 소결온도를 결정하였다. PLT 세라믹 시편을 제조하기 위한 하소 및 소결온도는 각각 $850^{\circ}C$, $1150^{\circ}C$ 이고 더 높은 소결온도에서는 많은 질량 손실이 발생하였다. 세라믹 시편을 사용한 온도-유전율 특성의 측정으로 La 조성에 따른 PLT의 온도에 대한 유전특성을 조사하였다. 5, 10 및 15 mol%의 La 농도에 따라 PLT의 상전이점은 각각 $330^{\circ}C$, $269^{\circ}C$ 및 $210^{\circ}C$를 나타내었다. 제조된 PLT 시편을 사용하여 적외선 감지 특성을 확인하였고, 고주파 마그네트론 스퍼터링을 이용하여 PLT 박막을 증착하였다. 다음으로 격자상수 및 광투과 특성을 통하여 완전 소결된 PLT 타겟으로 제작한 PLT 박막은 타겟과 동일한 구조를 가지고 있음을 확인하였다. We fabricated the ceramic PLT tablet which was composed of 5, 10 and 15 mol% lanthanum concentration and thin film PLT to develope pyroelectric materials, and investigated their characteristics. Using TG/DTA, we determined calcination and sintering temperature to sinter the PLT completely and to prevent volatilization of the Pb components. The calcination and sintering temperature were $850^{\circ}C$, $1150^{\circ}C$ respectively, and there was a lot of mass loss at higher sintering temperature. By measuring temperature-dielectric constant characteristics of ceramic tablet we investigated dielectric constant characteristics depends on La concentration. The Curie point of PLT with 5, 10 and 15 mol% lanthanum concentration were $330^{\circ}C$, $269^{\circ}C$ and $210^{\circ}C$ respectively. Using PLT ceramic tablet we observed IR detection characteristics, and then deposited PLT thin film by rf magnetron sputtering. We verified that PLT thin film fabricated with completely sintered PLT target had the same structure to target by investigating lattice constant and optical transparency.