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정상철,박흥철 全南大學校 觸媒硏究所 1996 觸媒硏究 論文集 Vol.18 No.-
ZnO thin films were prepared from zinc acetate using a horizontal tube hot-wall CVD reactor under various pressure and the dependency of film characteristics on operating conditions was studied. The profile of the thin film grown on microscale trenches and the macroscopic growth rate distribution along the results indicate that the CVD reaction mechanism changes with operating pressure. A model was proposed to explain the experimental results. The model reveals that, at higher pressures, ZnO film is formed directly from zinc acetate through the slow surface reaction, as was pointed out in our previous paper APCVD. At low pressure, active species formed in the gas phase via gas-phase reaction. At intermediate pressure, these two reaction paths coexist but the active intermediates are deactivated through molecular collisions with nitrogen. The experimental results are explained by assuming the rate of the reverse reaction is proportional to CN₂³
열 CVD 법에 의한 ZnO 박막의 저온 합성에 관한 연구 : 초산아연을 원료로 하는 박막 합성 Synthesis of Thin Film from Zinc Acetate
문희,박흥철,정상철 한국화학공학회 1991 Korean Chemical Engineering Research(HWAHAK KONGHA Vol.29 No.5
기존의 MOCVD법에서 사용한 원료의 문제점을 개선하기 위한 일환으로, 값이 싸고 취급이 용이한 초산아연 Zn(CH₃COO)₂·2H₂O을 원료로 선택하여 열 CVD법에 의해서 C축 배향성이 우수한 ZnO 박막을 상압과 비교적 낮은 반응온도에서 빠른 성막속도로 합성하였다. ZnO 박막은 250℃ 이상으로부터 성막이 시작되었고, 온도가 올라갈수록 적층량이 증가하였다. 적층속도에 대하여 carrier gas(N₂)의 유속, O₂의 유속이 변수로 작용하였으며, 산소가 존재하지 않은 조건하에서도 성막이 가능하였다. For the purpose of improving the use of raw materials, zinc acetate-2-water which is cheap and easy to handle was used to synthesize ZnO thin films by thermal CVD method, which gave a good C-axis orientation even at atmospheric pressure and at relatively low temperature. The formation of ZnO films starts from 250℃ and the deposition rate increases with increasing reaction temperature. The rate of deposition was affected by flow rates of N₂ and O₂. Without the flow of O₂, the oxygen required in synthesizing ZnO films was partially supplied by zinc acetate-2-water itself.
문희,박흥철,장경술 한국화학공학회 1988 Korean Chemical Engineering Research(HWAHAK KONGHA Vol.26 No.2
NiCl₂용액으로 부터 γ-Alumina에 nickel을 함침시킨 후, 활성물질인 nickel의 농도분포를 electron probe microanalysis(EPMA)에 의하여 측정하였다. Nickel의 분포 및 담지량을 옹액의 초기 pH, 농도 및 온도와 담체의 전처리 조건을 변화시킴으로서 조절될 수 있음이 실험적으로 밝혀졌으며 Ni/γ-Alumina계의 담지메카니즘은 세공내 용액의 용해도차에 의한 침적현상으로 만족스럽게 설명될 수 있었다. After impregnating nickel from NiCl₂ solution onto γ-alumina, the concentration profile of nickel, an active material was measured by an electron probe micro-analysis(EPMA). Experimental results showed that the distribution and amounts of nickel could be controlled by changing initial pH, concentration and temperature of the solution, and pretreatment conditions of the support. The impregnation mechanism of Ni/γ-alumina system could be explained satisfactorily by the deposition due to difference in solubilities of the active material in the solution which exists in the pore.
정상철,박흥철,김필성 全南大學校 觸媒硏究所 1996 觸媒硏究 論文集 Vol.18 No.-
ZnO was synthesized by deposing gas phase zinc acetate on a rotating disk in a vertical thermal CVD reactor. Structural and optical characteristics of the ZnO thin film were investigated after deposition. Dependency of the film growth rate on the temperature of deposition was so high in the ranges of 350∼400℃ that the energy of activation was 150.54 kJ/mol, while it reduced to 27.72 kJ/mol, above 400℃. Deviation of growth rate was large at low spin rate in case of disk rotation but showed that it was small at high spin rate. The flux of carrier gas a factor of the growth rate. As a result investigation on effect for wafer type, it was known that the deviation of the growth rate could be expressed as a function of wafer type. ZnO thin film deposited on glass had a low absorbance at 400~900nm wave length ranges and oriented along the C-axis strongly.