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Shannon`s Entropy와 DEA를 결합한 효율성 분석 -세계 주요 20대 컨테이너항만을 대상으로-
박호 ( Ho Park ),김동진 ( Dong Jin Kim ),왕진 ( Jin Wang ) 한국생산성학회 2012 生産性論集 Vol.26 No.4
Data Envelopment Analysis (DEA) is a non-parametric method widely used for efficiency assessment of units having similar characteristics. However, DEA method has several different models and the result of each model is usually different making the choice of the specific model difficult in assessing the efficiency of units. One way of overcoming this difficulty is to combine the different DEA models into an integrated one with each model being weighted according to some weighing method. In this regard, we use Shannon`s Entorpy measure to combine the DEA models in such a way that all the efficiency results calculated from each model are considered in the integrated model to rank the units. For the study, the top 20 container ports in the world are compared for efficiency based on the traditional DEA method and the proposed method with Entropy.
Nano CMOSFET에서 Channel Stress가 소자에 미치는 영향 분석
한인식,왕진석,이희덕,지희환,김경민,주한수,박성형,김용구 대한전자공학회 2006 電子工學會論文誌-SD (Semiconductor and devices) Vol.43 No.3
In this paper, reliability (HCI, NBTI) and device performance of nano-scale CMOSFETs with different channel stress were investigated. It was shown that NMOS and PMOS performances were improved by tensile and compressive stress, respectively, as well known. It is shown that improved device performance is attributed to the increased mobility of electrons or holes in the channel region. However, reliability characteristics showed different dependence on the channel stress. Both of NMOS and PMOS showed improved hot carrier lifetime for compressive channel stress. NBTI of PMOS also showed improvement for compressive stress. It is shown that Nit generation at the interface of Si/SiO2 has a great effect on the reliability. It is also shown that generation of positive fixed charge has an effect in the NBTI. Therefore, reliability as well as device performance should be considered in developing strained-silicon MOSFET. 본 논문에서는 채널 stress에 따른 Nano-scale CMOSFET의 소자 및 신뢰성 (HCI, NBTI)특성을 분석하였다. 잘 알려져 있듯이 NMOS는 tensile, PMOS는 compressive stress가 인가된 경우에 소자의 특성이 개선되었으며, 이는 전자와 정공의 이동도 증가에 의한 것임을 확인하였다. 그러나 신뢰성인 경우에는 소자 특성과는 다른 특성을 나타냈는데, NMOS와 PMOS 모두 tensile stress가 인가된 경우에 hot carrier 특성이 더 열화 되었으며, PMOS의 NBTI 특성도 tensile에서 더 열화 되었음을 확인하였다. 신뢰성을 분석한 결과, 채널의 tensile stress로 인하여 Si/SiO2 계면에서 interface trap charge의 생성과 산화막 내 positive fixed charge의 생성에 많은 영향을 끼침을 알 수 있었다. 그러므로 나노급 CMOSFET에 적용되는 strained-silicon MOSFET의 개발을 위해서는 소자의 성능 뿐 만 아니라 신뢰성 또한 고려되어야 한다.