http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
김흥락,김영덕,정우철,김광일,김동수 한국비파괴검사학회 2002 한국비파괴검사학회지 Vol.22 No.4
수용액에 포함된 수소이온(H^+)의 농도를 측정하는 유리 전극형 수소이온 농도(pH) 센서의 기본 구조를 bulk micromachining 기술로 구현하여 소형의 pH센서를 제작하였다. 박막 증착이 가능한 경사 식각으로 개방된 2개의 기본 구조물을 형성하고, 일정 전위를 유지하기위한 기준전극은 식각된 구조물 경사면에 박막형 Ag/Agcl으로 확보하였다. H^+과 교환반응으로 전위를 발생시키는 감응부는 Na 20%이상 포함된 glass로 100㎛ 내외로 미세 연마하여 기본 구조물에 접합하여 완성하였다. 또한 외부 용액과 기준 용액의 혼합을 방지하면서 전류 도통 역할을 하는 액간 접촉부는 50㎛ × 50㎛ 크기의 Si 이방성 식각 부분에 한천을 삽입하고 난 다음 기존의 구조물에 접합하여 형성하였다. 각 구조물을 완성한 다음 2M 농도의 KCl 기준 용액을 구조물에 채우고, 상온 에폭시로 센서 구조물을 밀봉하여 센서를 완성하였다. 제작된 pH센서들은 표준 pH 용액에 대하여 약 90mV/pH의 전위값이 측정되었다. A structure of a glass electrode-type pH sensor for measuring any concentration of H^+ in an aqueous solution was embodies with bulk micromachining technology. Two open well structure were formed, and a reference electrode was secured by the Ag/AgCl thin film in the sloped side of the etched structure. A sensitive membrane of an indicator electrode for generationg a potential by an exchange reaction to H^+ was made with a glass containing Na 20% or more finely so that its thickness might be 100㎛ or so, and then it was bonded to one pyramidal structure. A liquid junction for a current path was formed by filling an agar in the anisotropically etched part of the Si wafer, which had a size of 50㎛ × 50㎛, and then bonded it to the other. after complete fabrication of each part, it was filled qith a 2M KCl reference solution and encapsulated the sesor structure with a cold epoxy. The potential value of fabricated pH sensor was about 90mV/pH in the standard pH solutions.
김흥락,한운우,박혜숙 한국환경과학회 2002 한국환경과학회지 Vol.11 No.7
The characteristics of drinking groundwater quality at Chung Cheong Nam Do was analyzed by investigating the 3,086 groundwater data which were carried out the water quality inspection from Jan. 1998 to Dec. 1998. It was found that all the mean concentration of items was not over the drinking water quality standard except Zn at Yeongee area. The highest mean concentration of nitrate was 8.2 ㎎/ℓ at Hongsung area. And the mean concentrations of nitrate and ammonium at Sucheon, Yesan, Yeongee were relatively higher. It was considered that the groundwater of that area was contaminated by breeding livestock as farm pollutants. The mean concentrations of chloride, hardness and evaporation residual at coastal regions were higher than inland regions. Especially the mean concentration of chloride was 2.5 times higher. It was considered that the groundwater at coastal regions was affected by seawater. It was found that the correlation between Fe and Mn was relatively high(r=0.776) and the correlation between hardness and evaporation residual was very high(r=0.983). The rainfall series and detection rate of E-coli had the hydrologic persistence. The correlation between the detection rate and rainfall series over 150 mm was very high (r=0.9146). Therefore it is surely required to control the groundwater sanitation in the rainy season.
김흥락(Heung Rak Kim),김광일(Kwang Il Kim),강성건(Sung Gun Kang),김동수(Dong Soo Kim),윤화식(Hwa Shik Yoon),류근걸(Kun Kul Ryoo),김영주(Young Joo Kim) 한국진공학회(ASCT) 1999 Applied Science and Convergence Technology Vol.8 No.1
방사광을 이용한 전반사 형광 분석법으로 Si 웨이퍼 표면 금속 불순물의 검출능을 향상시켰다. 측정장치는 특정 단색광 에너지만을 선택할 수 있는 모노크로메팅부, 측정챔버안으로 유입되는 방사광은 차폐하고 원하는 크기의 단색광을 선택하는 슬릿부 그리고 Si 웨이퍼 표면에서 전반사에 의해 발생하는 형광 X-선을 검출하는 측정부로 구성되어 있다. 단색광의 에너지는 10.90 KeV로 선택하였고, 최적의 전반사 조건을 확립하기 위하여 소멸시간과 Fe의 형광 X-선의 강도비의 관계를 이용하였다. 기존 X-선원을 이용하여 관찰한 결과와 비교하였을 경우에, 최대 약 50배까지 검출감도를 향상 시킬 수 있었다. 특히, TRXFA (Total Reflection X-ray Fluorescence Analyzer)법으로는 검출하기 어려운 5×10^10 atoms/㎠ 수준의 금속오염은 방사광을 이용한 TRSFA(Total Reflection Synchrotron Fluorescence Analyzer)법으로는 충분히 검출할 수 있고, 5×10^9 atoms/㎠의 금속 불순물까지 검출할 수 있는 방법 및 장치를 개발하였다. 이를 이용하여 차세대 Si 웨이퍼의 초극미량 금속 불순물 분석에 이용할 수 있는 방법으로 기대된다. Total reflection X-ray fluorescence spectroscopy using synchrotron radiation source called as TRSFA was explored to achieve high sensitivities to impurity metals on Si wafer surface. It consists of monochromating part to select a specific wavelength, slit part to shield direct beam and to control monochromated beam, and main chamber to dectect fluorescent X-ray counts of impurities on Si wafer. Monochromated X-ray of 10.90 KeV was selected and the optimum total reflection condition on silicon wafer was obtained through tuning the dead time and fluorescent X-ray count of Si and Fe. TRSFA system could increase the sensitivity as high as 50 times in comparision with TRXFA using normal X-ray source. But the trend was varied since the surface conditions of Si wafers and, therefore, the reflectivities were different. Furthermore, there seems to be a promising path to reaching a detection limit useful to the next generation metal impurities control, because Fe impurity below to the 5×10^9 atoms/㎠ can be detectable through the developed TRSFA system.
김동수,김광일,김흥락,정우철,남효덕,Kim, Dong-Soo,Kim, Kwang-Il,Kim, Heung-Rak,Jeong, Woo-Cheol,Nam, Hyo-Duk 한국전기전자재료학회 2005 전기전자재료학회논문지 Vol.18 No.11
In this study, a step-down piezoelectric transformer was fabricated to utilize as an adapter for charging batteries of mobile electronic appliances. The ceramic part of the transformer is $Pb[(Mn_{1/3}Sb_{2/3})_{_0.05}Zr_{0.475}Ti_{0.475}]O_3$ with mechanical quality factor of 1600, electromechanical coupling coefficient $59\%$, and piezoelectric constant $d_{33}$ 1300, which can be utilized as a piezoelectric transformer. A simply fabricated disk-typed test pattern of diameter 28 mm and thickness 2 mm was used to characterize output voltage, step-down ratio as a function of electrode area with the input remained constant, and power, efficiency as a function of input voltage, and temperature-dependent electric characteristics were evaluated. The sample APT1 showed the best properties. The highest admittance, effective electromechanical coupling coefficient and an appropriate mechanical quality factor were obtained at the sample with the input/output area ratio of 1:1.5 at the common electrode, and the condition of 20 $V_{rms}$, $50\;\Omega$ made the maximum efficiency of $95\%$. The temperature was increased by 14.7'E as the input voltage was increased for $50\;V_{rms},\;50\;\Omega$.