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새로운 CAD용 Non-Quasi-Static MOS 과도 전류 모델
권대한,류윤섭,김기혁,황성우 대한전자공학회 1997 電子工學會論文誌, D Vol.d34 No.12
A new CAD-compatible non-quasi-static (NQS) MOS transient model is presented. A new type of weighted residual method, the collcoatin method, is adopted to obtian an approximate ordinary differntial equation from the continuity eqation. Contrasting to the conventional NQS models, the new model can directly include the variatin of the depletion charge and the derived transient current sare expressed with only physically meaningful variables. The new model predicts transient behaviors reasonably well in the calculation including cutoff regions where the depletion charge rapidly changes.