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화학 및 생물센서 : SnO2 열산화감지막의 제작 및 특성
강봉휘 ( Bong Hwi Kang ),이덕동 ( Duk Dong Lee ) 한국센서학회 2002 센서학회지 Vol.11 No.6
New formation technique of metal of oxide sensing film was proposed in this paper. Silicon wafer with Pt electrodes was used as a substrate for depositing metal Sn film. Metal Sn was deposited in the state of not continuous film but only island state. The samples were prepared to obtain the optimal condition of metal Sn deposition. The resistances of deposited Sn onto Pt electrodes amounted to 1 kΩ, 5 kΩ, 10 kΩ and 50 kΩ, respectively. Also The sample with 1,500 Å thickness of Sn was prepared in order to compare sensing properties between conventional type and proposing type. After deposition of metal Sn, SnO_2 was formed by thermal oxidation method for 3 hrs. in O_2 ambient at 700℃. Surface morphology, crystal structure and surface roughness of oxidized-sensing film were examined by SEM, XRD, and AFM, respectively. From the results of these analyses, the optimal deposition condition of Sn was that the Pt electrode resistance became 10 kΩ (300 Å). Also, the sensing characteristics of fabricated sensing film for various concentrations of butane, propane and carbon monoxide gases were measured at the operating temperatures of 250 ℃, 300 ℃ and 350 ℃, respectively. Although catalyst was not added to the sensing film, it has exhibited the high sensitivity to all the test gases.
Fabrication of low power micro-heater for micro-gas sensor II. Characteristics of micro-gas sensor
정완영,이상문,강봉휘,장동근,이덕동,노보루 야마조애,Chung, Wan-Young,Lee, Sang-Moon,Kang, Bong-Hwi,Jang, Dong-Kun,Lee, Duk-Dong,Yamazoe, Noboru The Korean Sensors Society 1997 센서학회지 Vol.6 No.3
A new planar-type microsensor, which had a platinum heater and a sensing layer on the same plane was fabricated on silicon substrate with stress-relieved PSG(phosphosilicate glass)/$Si_{3}N_{4}$(800nm/150nm) diaphragm. The proposed planar-type microsensor could be fabricated by simple silicon process using only 3 masks for photolithography process compared with 5 or 6 masks of the typical micro-gas sensor. The thermal properties of the microsensor from thermal simulation were compared with those of the fabricated microheater. Although there are some discrepancy between the simulation result and the result from the fabricated microheater, the thermal simulation by FEM was proved to be an useful method to evaluate the thermal properties of microheater. The sensing characteristics of the fabricated microsensor with the planar-type heater were investigated also.
알카리 금속 탄산염과 결착제의 혼합물을 감지물질로 하는 고체전해질 가스센서의 CO2 감응 특성
채유석,송갑득,강봉휘,서무교,이덕동 ( Yu Sug Chai,Kap Duk Song,Bong Hwi Kang,Moo Gyo Seo,Duk Dong Lee ) 한국센서학회 1998 센서학회지 Vol.7 No.2
The simple solid electrolyte carbon dioxide sensor with heaters were fabricated by using Li ionic conductor. Two Au electrodes were used for the reference and sensing electrode respectively. Two types of gas sensors, type ( I ) and type ( II ), were fabricated. Type ( I ) sensor was fabricated by the method of melting and crystallizing alkali metal carbonate at the temperature of 420 ∼ 500 ℃. The sensing membrane of type ( II ) sensor was formed by the printing method on sensing electrode after metal carbonate was mixed with binder. The response characteristics of sensors fabricated for the carbon dioxide were investigated for a range of CO₂ concentration from 950 ppm to 9,950 ppm at operating temperature 420 ℃. Type ( I ) sensor and type ( II ) sensor showed the sensitivity of 62 mV/decade and 65 mV/decade respectively. The emf/decade of type ( II ) sensor tested at 420 ℃ almost followed the theoretical value of Nernst`s equation and showed stable response characteristics with the fast response time of 15 ∼ 20 sec. Also type ( II ) sensor showed excellent stability and reproduction properties for 60 days.
동일면상에 heater 와 감지전극을 형성한 마이크로가스센서의 제작 및 특성
임준우(Jun Woo Lim),이상문(Sang Mun Lee),강봉휘(Bong Hwi Kang),정완영(Wan Young Chung),이덕동(Duk Dong Lee) 한국센서학회 1999 센서학회지 Vol.8 No.2
A micro-gas sensor with heater and sensing electrode on the same plane was fabricated on phosphosilicate glass(PSG, 800nm)/Si₃N₄ (150nm) dielectric membrane. PSG film was provided by atmospheric pressure chemical vapor deposition(APCVD), and Si₃N₄ film by low pressure chemical vapor deposition(LPCVD). Total area of the fabricated device was 3.78 X 3.78mm2. The area of diaphragm was 1.5 x 1.5㎟, and that of the sensing layer was 0.24 x 0.24㎟. Finite-element simulation was employed to estimate temperature distribution for a square-shaped diaphragm. The power consumption of Pt heater was about 85mW at 350℃. Tin thin films were deposited on the silicon substrate by thermal evaporation at room temperature and 232 ℃, and tin oxide films(SnO₂) were prepared by thermal oxidation of the metallic tin films at 650℃ for 3 hours in oxygen ambient. The film analyses were carried out by SEM and XRD techniques. Effects of humidity and ambient temperature on the resistance of the sensing layer were found to be negligible. The fabricated micro-gas sensor exhibited high sensitivity to butane gas.
화학 및 생물센서 : 졸 - 겔법을 이용한 In2O3 박막의 오존 센서
이윤수(Yun Su Lee),송갑득(Kap Duk Song),최낙진(Nak Jin Choi),주병수(Byung Su Joo),강봉휘(Bong Hwi Kang),이덕동(Duk Dong Lee) 한국센서학회 2001 센서학회지 Vol.10 No.2
A highly selective, sensitive and reliable ozone sensing In₂O₃ thin film was fabricated by a sol-gel method. The fabricated film is operated at a relatively lower temperature than ever developed thin films and saved operating power. In₂O₃ films deposited by sol-gel technique has been recently attracted because it is an economical and energy saving method and precisely controlled microstructure. Indium alkoxide precursor was synthesized from the reaction between indium hydroxide and butanol. PVA binder was used to improve adhesion of the films. The In₂O₃ thin films were obtained by spin citing from 1 to 5 times followed by drying at 100℃ and calcining at 600℃ for 1h. The film thickness was controlled by the number of coating time. The morphology and the thickness of the In₂O₃ films were examined by a SEM and XRD. The In₂O₃ thin films show a high sensitive to ozone gas at operating temperature of 250℃. The In₂O₃ sensor has very good selectivity to CH₄, CO, C₄H_(10) and ethanol.
강봉휘,이덕동,임준우,장경훈 경북대학교 전자기술연구소 1996 電子技術硏究誌 Vol.17 No.1
Low power consuming butane gas sensors were fabricated using mica substrate which is a thin and elastic insulator. To increase the sensitivity and the stability, various catalyst layers were formed on SnO₂ thin layer. Among them, SnO₂/Pt(17Å)/Pd(30Å) and SnO₂/Pt(8Å)/Pd(30Å) thin layer showed good characteristics in stability and dependence of temperature and humidity. The size of fabricated sensors was 1×3 ㎟ and the consumed power was lower than 100 ㎽ at operating temperature(250℃). For 2,000 ppm butane concentration, the response time and the recovery time was about 5 seconds and 15 seconds respectively. The sensitivity of the sensors was about 80% for 5,000 ppm butane concentration.
Sc₂O₃를 첨가한 SnO₂/Ca,Pt 가스센서의 부탄감응 특성
이윤수,성정훈,강봉휘,서무교,이덕동 경북대학교 센서기술연구소 1997 센서技術學術大會論文集 Vol.8 No.1
A coprecipitation method was used for preparing Ca and Pt doped SnO_(2) powder. Components were investigated by XRD and SEM. Sc_(2)O_(3) added SnO_(2) /Ca,Pt thick film devices were fabricated by screen printing technique for butane gas detecting. By addition of Sc_(2)O_(3), the selectivity of SnO_(2) /Ca,Pt thick film for butane gas was enhanced. The sensitivity of Sc_(2)O_(3) added SnO_(2) /Ca,Pt device to 3,000 ppm butane in air was about 90% at the operating temperature. of 200℃. And the device showed good selectivity for butane gas.
장경훈,임준우,강봉휘,이덕동 경북대학교 센서기술연구소 1995 센서技術學術大會論文集 Vol.6 No.1
Low power consuming butane gas sensors were fabricated using mica substrate which is a thin and elastic insulator. To increase the sensitivity and the stability, various catalyst layers were formed on SnO_(2) thin layer. Among them, SnO_(2) /Pt(17Å)/Pd(30Å) and SnO_(2) /Pt(8Å )/Pd(30Å) thin layer showed good characteristics in stability and dependance of temperature and humidity. The size of fabricated sensors was 1 x 3 mm^(2) and the consumed power was lower than 100 mW at operating temperature(250℃). For 2000 ppm butane concentration, the response time and the recovery time were about 5 seconds and 15 seconds respectively. The sensitivity of the sensors was about 80 % for 5000 ppm butane concentration.
최낙진,류정호,강봉휘,이광우,이덕동 경북대학교 센서기술연구소 1997 센서技術學術大會論文集 Vol.8 No.1
The semiconductor gas sensors with a tin oxide as the raw material have been generally used to detect gases in the principle of electrical conductivity variation. However, it was difficult to design the gas detection system due to the non-selectivity, the non-stability and the influence of temperature, humidity etc. Therefore, it was proposed NDIR(non-dispersive infrared) method using pyroelectric infrared sensor to overcome the disadvantage of the semiconductor gas sensors. This method has been recently used to detect various gases in industrial parts. It has the advantages of selectivity, stability and responsibility. The gases used in this paper were CO_(2)(carbon dioxide) and HC(hydrocarbon) series. The system was designed with the Intel MCU i8097BH microprocessor. Main topics were to remove interference effect for other gases and to minimize influence for ambient circumstance by using the software and the hardware techniques.