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$Sb_2O_3$첨가량에 의한 Barium-Titanates의 전기적 성질
박창엽,왕진석,김현재,Park, Chang-Yeop,Wang, Jin-Seok,Kim, Hyeon-Jae 대한전자공학회 1977 전자공학회지 Vol.14 No.1
공기중의 열처리에 의하여 상온에서 낮은 저항을 갖는 PTC 써미스터를 제작했다. 재현성을 높이기 위해 BaTiO3에 Al2O3, SiO2 및 TiO2를 첨가 했으며, 불순물로서 Sb2O3를 첨가했다. 시편은 공기 중에서 1,200℃∼1,380℃로서 가열되었으며, Sb2O3첨가량에 대한 저항관계를 조사했다. 이 시편들은 공기중의 열처리에서도 재현성이 좋았다. 연구된 시편은 3.75mole% Al2O3, 1.25mole% SiO2, 2.25mole% TiO2 및 0.16∼0.25wt% Sb2O3를 BaTiO3에 첨가하여 만들었으며 저항값은 14∼300ohm이었다. "Electrical Properties of Barium Titanates with Addition Sb2O3." PTC BaTiO3 in low resistance at room temperature was prepatred. Al2O3, SiO2 and TiO2 were doped with a view to improving reproduction. Sb2O3 was doped as impurity in order to control of resistivity of the specimens. The relations between the amount of Sb3O3 and electrical properties wereinvestigated. Of the compositions studied, additions of 3.75mole% Al2O3, 1.25mole% SiO2, 2.25mole% TiO2 and 0.16~0.25wt% Sb2O3 to BaTiC3 was low resistivity in 14-300 ohm-cm.00 ohm-cm.
Al-Si쇼트키 장벽을 이용한 표면 트랜지스터에 관한 연구
박창엽 연세대학교 산업기술연구소 1985 논문집 Vol.17 No.2
In this study, the surface transistors using Al-Si Schottky barrier with thickness of tunnel oxide layer 40Å were fabricated by photolithography method and those characteristics were investigated. As a result, current gain and offset voltage of the devices, in P-type were 15, 0.3V, in N-type 13, 0.4V, respectively. The device is featured by very simple processing, and shows promise in a variety of application, including VLSI high speed IC's.
$Pb({Zr_0.53}, {Ti_0.47})O_3$ 압전세라믹소자의 고주파필터에 관한 연구
박창엽,송준태 대한전기학회 1978 전기의 세계 Vol.27 No.3
The prezoelectric ceramic specimen compoxed of PbO, ZrO$_{2}$, TiO$_{2}$ were prepared in this Lab, and showed properties of dielectric constant .epsilon.$^{33}$ /.epsilon.$_{0}$ 487 at 1kHz, electromechanical coefficient Kr 0.524. As the characteristics of piezoelectric HF filter used these piezoelectric specimen were the resonant point 6.7 MHz, effective bandwidth 690KHz, it was exellant. Since a LC resonant filter can be replaced bt this piezoelectric HG filter, it will greatly contribute to compose a compact circuit. If the resont point can be controlled, this piezoelectric HF filter practically.
박창엽 대한전기학회 1979 전기의 세계 Vol.28 No.9
이글은 다음과 같이 구성되어 있다. 1. 서론 2. SIT의 특징 3. SIT의 응용 4. 전력용 SIT 5. 전기적 특성
郭成根,朴昌燁 연세대학교 산업기술연구소 1980 논문집 Vol.12 No.1
Quartz was fabricated by plano convex type, and oscillation of it was depicted with equivalent circuit model. Its characteristics of frequency vs. temperature, and period was studied. Meterial, polishing, cutting angle and temperature are studied and agreement of approximate analysis is emphasized. In this thesis, frequency change by plano convex type was one third of that in plane type.
박창엽 대한전자공학회 1968 전자공학회지 Vol.5 No.3
이 열전발전기는 Bi계화합물 반도체 Sb2Te3 및 소량의 불순물을 함유한 ZnSb를 사용하여 실험한 것으로 열기전력 α, 비저항ρ, 열전도율k 및 고온부의 온도차를 측정하였다. 특성은 다른 재료를 사용한 열전발전기보다 Sb2Te3+Bi2Se3와 Bi3Te2+Sb2Te3를 소자로 사용한 경우 효율이 우수하였으며 이의 효율은 1.42%였다. This thermcelectrie generator devices have been determined for bismuth alloys, Sb2T and AnSb containing small amounts of doping materials. The thermoeleotric matermoelectric power;$\alpha$; resistivity; $\rho$, heatconduction; k, and temperature difference between cold and hot junction was measured. Generator consisting both B T + B S and B T+S T is better efficient than others containing another thermoceuple matarials. Its efficiency is 1.42%.
朴昌燁 연세대학교 대학원 1972 延世論叢 Vol.9 No.1
比抵抗이 8×107Ω-cm인 P型 CdTe를 Source로 基板을 0˚에서 60˚까지 계속 이동시키면서 基板을 200℃로 加熱하여 1000Å/min의 蒸着速度로 蒸着시킨 두께 980Å인 박막을 350℃에서 열처리할때 18℃에서 1×1011Ω-cm인 것이 200℃에서는 5×10l0Ω-cm가 되었다. 박막필림의 발생전압이나 저항은 열처리 온도에 따라 많은 차가 있었다. 基板을 一定한 角度로 고정시켜 만든 필림보다 전압은 減少하였다. P type CdTe single crystal of which resistivity is 8×107Ω-cm, is used as evaporation source. When the substrate is heated at 200℃ and incessantly moved during evaporation at 1000Å/min, thin film is obtained. It's resistivity when it is treated at 350℃ in vacuum, is 1×1011Ω-cm at 18℃ and it is decreased to 5×1010Ω-cm at 200℃ Photo-voltage and resistivity of these film are different according to heating temperature. And Photovoltage of the film which is evaporated by moving substrate is greater than that of the film produced at constant angle deposit.