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0.13μm Cu/Low-k 공정 Setup과 수율 향상에 관한 연구
이현기,장의구,Lee, Hyun-Ki,Chang, Eui-Goo 한국전기전자재료학회 2007 전기전자재료학회논문지 Vol.20 No.4
In this study, the inter-metal dielectric material of FSG was changed by low-k material in $0.13{\mu}m$ foundry-compatible technology (FCT) device process based on fluorinated silicate glass (FSG). Black diamond (BD) was used as a low-k material with a dielectric constant of 2.95 for optimization and yield-improvement of the low-k based device process. For yield-improvement in low-k based device process, some problems such as photoresist (PR) poisoning, damage of low-k in etch/ash/cleaning process, and chemical mechanical planarization (CMP) delamination must be solved. The PR poisoning was not observed in BD based device. The pressure in CMP process decreased to 2.8 psi to remove the CMP delamination for Cu-CMP and USG-CMP. $H_2O$ ashing process was selected instead of $O_2$ ashing process due to the lowest condition of low-k damage. NE14 cleaning after ashing process lot the removal of organic residues in vias and trenches was employed for wet process instead of dilute HF (DHF) process. The similar-state of SRAM yield was obtained in Cu/low-k process compared with the conventional $0.13{\mu}m$ FCT device by the optimization of these process conditions.
$Cl_2/Ar$ 유도 결합 플라즈마에서 Pt 박막 식각시 $N_2$ 가스 첨가 효과
류재흥,김남훈,장의구,김창일,Ryu, Jae-Heung,Kim, Nam-Hoon,Chang, Eui-Goo,Kim, Chang-Il 대한전자공학회 2000 電子工學會論文誌-SD (Semiconductor and devices) Vol.37 No.7
본 연구에서는 Pt 박막을 식각하기 이하여 기존에 최적화된 가스 혼합비인 $Cl_2$(10)Ar (90)에 $N_2$ 가스를 첨가하기 실험하였다. $Cl_2$(10)/Ar(90)의 가스 혼합비에 20% $N_2$가스 첨가시, $SiO_2$ 마스크에 대한 Pt 박막의 선택비 향상으로 70$^{\circ}$ 이상의 식각 프로파일을 얻을 수 있었다. 이는 $SiO_2$ 마스크 위에 Si-N, Si-O-N과 같은 차단막 생성을 통한 결과로 확인 되어졌다. $SiO_2$ 마스크에 대한 Pt 박막의 최대 선택비와 식각률은 각각 1.71과 4125 ${\AA}$/min 이다. 이는 Pt-N, Pt-N-Cl과 같은 휘발성 화합물의 생성을 통한 결과로 판단된다. In this study, the effects of the addition of $N_2$ gas into the $Cl_2$ (90)/Ar(10) gas mixture, which has been proposed as the optimized etching gas combination, for etching of platinum was performed. The selectivity of platinum film to $SiO_2$ film etch mask increased with the addition of $N_2$ gas, and etch profile over 75 $^{\circ}$ could be obtained when 20 % additive $N_2$ gas was added. These phenomena were interpreted as the results of a formation of blocking layer such as Si-N or Si-O-N on the $SiO_2$ mask. The maximum etch rate of Pt film and selectivity of Pt to $SiO_2$ are 1425 ${\AA}$/min and 1.71, respectively. These improvements were considered to be due to the formation of more volatile compounds such as Pt-N or Pt-N-Cl.
플립 칩 BGA에서 2차 레벨 솔더접합부의 신뢰성 향상
김경섭,이석,장의구,Kim, Kyung-Seob,Lee, Suk,Chang, Eui-Goo 대한용접접합학회 2002 대한용접·접합학회지 Vol.20 No.2
FC-BGA has advantages over other interconnection methods including high I/O counts, better electrical performance, high throughput, and low profile. But, FC-BGA has a lot of reliability issues. The 2nd level solder joint reliability of the FC-BGA with large chip on laminate substrate was studied in this paper. The purpose of this study is to discuss solder joint failures of 2nd level thermal cycling test. This work has been done to understand the influence of the structure of package, the properties of underfill, the properties and thickness of bismaleimide tiazine substrate and the temperature range of thermal cycling on 2nd level solder joint reliability. The increase of bismaleimide tiazine substrate thickness applied to low modulus underfill was improve of solder joint reliability. The resistance of solder ball fatigue was increased solder ball size in the solder joints of FC-BGA.
구리 CMP 공정변수 최적화를 위한 실험계획법(DOE) 연구
최민호,김남훈,김상용,장의구,Choi, Min-Ho,Kim, Nam-Hoon,Kim, Sang-Yong,Chang, Eui-Goo 한국전기전자재료학회 2005 전기전자재료학회논문지 Vol.18 No.1
Chemical mechanical polishing (CMP) has been widely accepted for the global planarization of multi-layer structures in semiconductor manufacturing. Copper has been the candidate metallization material for ultra-large scale integrated circuits (ULSIs), owing to its excellent electro-migration resistance and low electrical resistance. However, it still has various problems in copper CMP process. Thus, it is important to understand the effect of the process variables such as turntable speed, head speed, down force and back pressure are very important parameters that must be carefully formulated in order to achieve desired the removal rates and non-uniformity. Using a design of experiment (DOE) approach, this study was performed investigating the main effect of the variables and the interaction between the various parameters during CMP. A better understanding of the interaction behavior between the various parameters and the effect on removal rate, non-uniformity and ETC (edge to center) is achieved by using the statistical analysis techniques. In the experimental tests, the optimum parameters which were derived from the statistical analysis could be found for higher removal rate and lower non-uniformity through the above DOE results.