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A Study on the Band Structure of ZnO/CdS Heterojunction for CIGS Solar-Cell Application
Sim, Hana,Lee, Jeongmin,Cho, Seongjae,Cho, Eou-Sik,Kwon, Sang Jik The Institute of Electronics and Information Engin 2015 Journal of semiconductor technology and science Vol.15 No.2
In this paper, ZnO films were prepared by atomic layer deposition (ALD) and CdS films were deposited using chemical bath deposition (CBD) to form ZnO/CdS heterojunction. More accurate mapping of band arrangement of the ZnO/CdS heterojunction has been performed by analyzing its electrical and optical characteristics in depth by various methods including transmittance, x-ray photoemission spectroscopy (XPS), and ultraviolet photoemission spectroscopy (UPS). The optical bandgap energies ($E_g$) of ZnO and CdS were 3.27 eV and 2.34 eV, respectively. UPS was capable of extracting the ionization potential energies (IPEs) of the materials, which turned out to be 8.69 eV and 7.30 eV, respectively. The electron affinity (EA) values of ZnO and CdS calculated from IPE and $E_g$ were 5.42 eV and 4.96 eV, respectively. Energy-band structures of the heterojunction could be accurately drawn from these parameters taking the conduction band offset (CBO) into account, which will substantially help acquisition of the full band structures of the thin films in the CIGS solar-cell device and contribute to the optimal device designs.
First-principle Study for Cu-doped NiWO₄ as a p-type Conductive Oxide Candidate
Sangjun Sim(심상준),In Seo Kim(김인서),Jeongmin Lee(이정민),Kimoon Lee(이기문),Bongjae Kim(김봉재) 한국태양에너지학회 2021 한국태양에너지학회 학술대회논문집 Vol.2021 No.5
Nickel tungstate, NiWO<sub>4</sub>, is a rare candidate of transparent conductive oxides, which exhibits p-type conduction behavior. With its band gap of d-d character, doping on a transition metal can effectively tune the transport and optical properties of a system. Using a first-principles calculation, we study the Cu doping effect on the NiWO<sub>4</sub> system and compare our results with recent experimental findings. The system shows robust Mott-type band gap with Ni-d character, which is not disrupted upon Cu doping. The detailed magnetic and electronic ground states including Cu dopant energy level will be discussed based on our calculation results.
A Study on the Band Structure of ZnO/CdS Heterojunction for CIGS Solar-Cell Application
Hana Sim,Jeongmin Lee,Seongjae Cho,Eou-Sik Cho,Sang Jik Kwon 대한전자공학회 2015 Journal of semiconductor technology and science Vol.15 No.2
In this paper, ZnO films were prepared by atomic layer deposition (ALD) and CdS films were deposited using chemical bath deposition (CBD) to form ZnO/CdS heterojunction. More accurate mapping of band arrangement of the ZnO/CdS heterojunction has been performed by analyzing its electrical and optical characteristics in depth by various methods including transmittance, x-ray photoemission spectroscopy (XPS), and ultraviolet photoemission spectroscopy (UPS). The optical bandgap energies (Eg) of ZnO and CdS were 3.27 eV and 2.34 eV, respectively. UPS was capable of extracting the ionization potential energies (IPEs) of the materials, which turned out to be 8.69 eV and 7.30 eV, respectively. The electron affinity (EA) values of ZnO and CdS calculated from IPE and Eg were 5.42 eV and 4.96 eV, respectively. Energy-band structures of the heterojunction could be accurately drawn from these parameters taking the conduction band offset (CBO) into account, which will substantially help acquisition of the full band structures of the thin films in the CIGS solar-cell device and contribute to the optimal device designs.