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RISS 인기검색어
- 검색키워드
- 저자 : Gwiy Sang Chung ) (검색결과 185 건)
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정귀상,노상수 東西大學校 1999 동서논문집 Vol.5 No.-
Tungsten oxide(WO₃) thin films were prepared by reactive magnetron sputtering in an Ar/0₂ atmosphere from a compressed powder WO₃ target and their electrochromic(EC) phenomena were investigated. PEO-LiClO₄- PC polymer electrolyte can easely be formed into thin films and showed high transmittance. Such electrolyte has electrochromic properties suitable for large-scale electrochromic devices.For the devices using WO3₃thin films of 1500,2500,4000Å thickness with glass/IT0/W0₃/PEO-LiClO₄-Pc/ITO/g1ass structure, an optical modulation of 50∼60% were obtained at a potential range of 1-2 V. It has shown tphat transmittance and reflectance of light could be electrically controlled by low applied voltage.
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정귀상,강경두 東西大學校 2000 동서논문집 Vol.6 No.-
This paper describes on the fabrication of a SOI substrate by SDB technology and electrochemical etch-stop. The surface of the thinned SDB SOI substrate is more uniform than that of grinding or polishing by mechanical method, and this process was found to be a very accurate method for SOI thickness control. During electrochemical etch-stop, leakage current versus voltage curves were measured for analysis of the open current potential(OCP) point, the passivation potential(PP) point and anodic passivation potential. The surface roughness and the controlled thickness selectivity of the fabricated a SDB SOI substrate were evaluated by using AFM and SEM, respectively.
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전기화학적 식각정지법에 의한 고수율 압저항향 마이크로 압력센서의 제작
정귀상,박진성 東西大學校 1999 동서논문집 Vol.5 No.-
This paper presents the fabrication of high-yield piezoresistive micro pressure sensors by electrochemical etch-stop method in TMAH/IPA/pyrazine solution. Addition of pyrazine to TMAH etchants increases the etch rates of (100) Si, thus the elapsed time for etch-stop was shortened. I-V curves of n and p-type Si in TMAH/IPA/pyrazine solution were obtained. Diaphragms having 20 ㎛ thick were fabricated in 5-inch wafer. The thicknesses of diaphragms were measured and thickness variations were also checked. Piezoresistive pressure sensors using these diaphragms were fabricated by micromachining technology with a standard IC process. The diaphragm thickness is precisely controlled by electrochemical etch-stop method. The pressure sensitivity variation across a 5-inch Si wafer of 5% was obtained.
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정귀상,김한근 동서대학교 부설 연구소 1996 연구소 논문집 Vol.1 No.-
Anodic bonding is a key technology for micromechanical components. One major advantage with this method is the strong electrostatic forces obtained during bonding. These forces serve to pull the two surfaces together thereby minimising the unbonded areas around contaminated spots. In this paper, the bonding was performed at temperatures ranging from 300 to 450℃, voltages 400 to 1000 V and times 10 to 30 minutes. The sizes of the Si and the Pyrex #7740 glass were 6 mm×6 mm, respectively. Bonding processes and interfaces were observed by the optical microscope and SEM. Optimum condition of the anodic bonding was at temperature above 400℃ without regard to voltage.
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DC 마그네트론 스퍼터링법에 의한 백금박막 증착과 온도센서에의 응용
정귀상,노상수,최영규 동서대학교 부설 연구소 1996 연구소 논문집 Vol.1 No.-
Platinum thin films were deposited on Al??O?? substrates by DC magnetron sputtering for RTD (resistance thermometer devices) temperature sensors. We investigated the physical and eletrical characteristics of these films under various conditions, the input power, working vacuum, temperature of substrate and also after annealing these films. At substrate temperature of 300℃, input power of 7 w/㎠, working vacuum of 4 mTorr and annealing conditions of 1000℃ and 240 min, we obtained resistivity of 10.65 μΩㆍcm closed to Pt bulk value. Pt-RTD temperature sensors were favricated by using Pt thin films which were formed under the best conditions. Al??O?? substrate, W-wire, silver epoxy and SOG(spin-on-glass). Resulted from investigating TCR(temperature coefficient of resistance) fo the Pt-RTD temperature sensors, we obtained TCR value of 3825 ppm/℃ at annealing temperature of 1000℃, time of 240 min and Pt thin films thickness of 1㎛.
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고속응답, 저소비전력형 마이크로 유량센서의 제작과 그 특성
정귀상,홍석우 東西大學校 2000 동서논문집 Vol.6 No.-
This paper describes on the fabrication and characteristics of hot-film type micro-flowsensors integrated with Pt-RTD's and micro-heaters on the Si substrate, in which MgO thin-films were used as medium lager in order to improve adhesion of Pt thin-films to SiO2 layer. The MgO layer improved adhesion of Pt thin-films to SiO2 layer without any chemical reactions to Pt thin-films under high annealing temperatures. In investigating output characteristics of the fabricated micro-flowsensors, the output voltages increased as gas flow rate and its conductivity increased due to increase of heat-loss from sensor to external. Output voltage was 82 mV at N2 flow rate of 2000 sccm/min, heating power of 1.2W.
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정귀상,정현석 동서대학교 부설 연구소 1996 연구소 논문집 Vol.1 No.-
This paper describes the basic characteristics of Cr thin-films used as strain gauges, in which the Cr thin-films were deposited by DC magnetron sputtering. As increasing input power, its resistivity and sheet resistivity were decreasing and the size of grain was larger. But as increasing Ar gaseous pressures, its resistivity and sheet resistivity were increasing and the size of grain was smaller. The optimized deposition conditions as a strain gauge were the input DC power was 7 W/㎠ and the Ar gaseous pressure was 9 mTorr. The characteristics of fabricated Cr thin-film strain gauge were the GF(gauge factor) was 5.86 in longitudinal strain and -2.04 in transverse one, the TCR (Temperature Coefficient of Resistance) was under 400 ppm/℃ and the TCS(Temperature Coefficient of Sensitivity) was around 0 ppm/℃ in the temperature range 25 to 150℃. The response of this strain gauges is almost linear in tensile strain.
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수용성 암모니아 용약에서의 단결성 실리콘의 선택적 식각특성
정귀상,박진성 東西大學校 1998 동서논문집 Vol.4 No.-
This paper presents Si anisotropic ethcing characteristics in TMAH/JPA solution with addition of pyrazine Addition of IPA to TMAH solution, etching characteristics that the flatness of etching front was improved and undercutting was reduced were exhibited, but the etching rate of (100) Si was decreased. (100) Si etching rate of 0.747 ㎛/min which faster 52 % than pure TMAH 25 wt.% solution was obtained using TMAH 25 wt.%/IPA 17 vol.%/pyrazine 0.1 g and the etching rate of (100) Si was decreased with more additive quantity of pyrazine. Addition of pyrazine to TMAH 25 wt.% solution, the flatness variations of etching front was not observed and undercutting ratio was reduced about 30 ~ 50 %.
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