대출형 부동산 크라우드 펀딩의 법적 문제 및 개선방안-P2P대출 플랫폼의 중개업자를 중심으로-

김덕규,임춘성 한국금융법학회 2018 金融法硏究 Vol.15 No.1

Crowdfunding is a funding method that pools small amounts of capital from a large number of individuals called the "crowd" through so-called funding platforms or online intermediaries by collecting crowd intelligence about funding after promoting their specific business or purpose. Crowdfunding grows as an instrument of a funding method beyond charitable giving due to the development of information technology and Social Network Service. Especially, financial type of crowdfunding (lending-based and equity-based) is used as an alternative financial instrument for funders (as investors or lenders) and as a new way of investment for fund raisers (as issuers and borrowers) while the rate of bank deposit interest is low. Crowdfunding P2P lending and real estate in difficult situations, such as securing investment resources compared to other industries when trying to run a small-scale development projects. In this study Against this backdrop, the investment fund of the real estate development project examined the effects of the application of crowd-funding. Effects of the application of real estate development projects using crowd-funding will facilitate its ability to raise funds, improve transparency of business due to public participation and effectiveness of risk diversification, reduce the investment cost-effective, small-scale real estate development market growth, May be mentioned. 본 연구의 중심은 크라우드 펀딩 유형 중, 부동산시장의 다변화로 중개업뿐 아니라 저금리시대에 고수익 기대 및 중금리 대출 제공 등 새로운 금융상품으로 각광받는 대출형 부동산 크라우드 펀딩(P2P대출)의 현상과 문제점을 진단하고 개선방안을 제시하는 데 있다. 크라우드 펀딩의 장점을 크게 퇴색시키지 않으며 이러한 위험을 효과적으로 차단할 수 있는 적절한 규제장치는 무엇이고 그 수준은 어느 정도인가에 있다고 할 것이다. 따라서 법과 제도적 보완책으로 첫째, 부동산 크라우드 펀딩 P2P대출을 미국에서와 같이 “증권”으로 보아 P2P대출 중개업자를 자본시장법상의 규제대상으로 하고 금융투자업자인 투자중개업자로 등록 및 사업자의 신용정보를 관리하고 둘째, 부동산 크라우드 펀딩 플랫폼 자금공급자에 대한 다양한 정보공시 의무 및 이자율 규제, 자금공급자에 대한 내부운영 규제 등이 요구된다. 마지막으로 차입자의 개인신용정보 보호를 위해 P2P대출 중개업자 등이 신용정보회사 등에게 채권회수위임을 할 예정이라면 이러한 위임사항을 반드시 약관에 선반영되도록 하여야 할 것이다. 따라서 본 연구는 국내 P2P대출형 부동산 크라우드 펀딩의 차주를 보호하고 공정한 대부시장을 형성하는 것을 목적으로 하였으며, 이를 통해 부동산 크라우드 펀딩 플랫폼 자금공급자에 대한 다양한 정보공시 의무 및 이자율 규제, 자금공급자에 대한 내부운영 규제 역시 강화해야 할 것을 제시한다.

저온 AlN 중간층 삽입에 의한 Si (111) 기판위에 성장한 GaN 층의 특성

김덕규,김홍배 한국물리학회 2009 새물리 Vol.59 No.4

GaN layers were grown on silicon (111) substrates with low-temperature (LT) AlN interlayers by using metalorganic vapor phase epitaxy, and the properties of the GaN layers with a LT AlN interlayer inserted were investigated. The insertion of the LT AlN interlayer decreased the crack density of the 2nd GaN layer from 300 /cm to 5 /cm, sensitively. Also, the full width at half maximum of the (002) X-ray rocking curve was improved from 680 sec-1 to 651 sec-1, and the full width at half maximum of the bound exciton line was improved from 52.4 meV to 38.1 meV in photoluminescence measurements at 300 K. 유기화학기상증착법으로 저온 AlN 중간층을 이용하여 Si (111) 기판위에 GaN 박막을 성장하고 저온 AlN 중간층 삽입에 따른 특성을 연구하였다. 저온 AlN 중간층 삽입함으로서 2차 GaN 층의 균열밀도는 300/cm에서 5/cm로 급격히 감소하였다. 또한, 저온 AlN 중간층 삽입으로 인해 (002) X-ray rocking curve의 full width at half maximum은 680 sec-1에서 651 sec-1로 향상되었고 300 K에서 측정한 photoluminescence의 full width at half maximum도 52.4 meV에서 38.1 meV로 향상되었다.

저온 AlN 중간층을 이용하여 성장한 GaN 층의 1차 GaN 두께에 따른 광학적 특성

김덕규 한국물리학회 2009 새물리 Vol.58 No.5

유기화학기상증착법으로 저온 AlN 중간층을 이용하여 Si(111) 기판위에 GaN 박막을 성장하고 저온 AlN 중간층 아래의 1차 GaN 두께에 따른 광학적 특성을 연구하였다. 1차 GaN 두께에 따라 GaN 층의 donor bound exciton(I2) 피크 위치와 반치폭이 민감하게 변함을 알 수 있었다. Donor bound exciton 피크의 변화는 stress에 의한 균열 밀도 변화와 관련 있음을 확인하였다. 저온 AlN 중간층 0.4 μm 두께에서 가장 좋은 특성을 얻었으며 11 K에서 19.2 meV의 반치폭을 갖는 강한 발광 피크를 보였다. GaN layers were grown on silicon (111) substrates with low-temperature (LT) AlN interlayers by using metalorganic vapor phase epitaxy, and the variations in the optical properties of the GaN layers with 1st GaN layer's thickness were investigated. The peak position and the full width at half maximum (FWHM) of the donor bound exciton (I2) of the GaN layers changed sensitively with the thickness of the first GaN layer. The shift of the donor bound exciton peak was relative to the crack density due to heavy stress. For the 0.4-μm-thick 1st GaN layer, a strong band-edge emission of the GaN layer on Si (111) was observed with a full width at half maximum of the bound exciton line being as low as 19.2 meV at 11 K.

Si (111) 기판위에 성장한 GaN 층의 저온 AlN 중간층 두께에 따른 광학적 특성

김덕규 한국물리학회 2008 새물리 Vol.57 No.5

GaN layers were grown on silicon (111) substrates with low-temperature (LT) AlN interlayers by using metalorganic vapor phase epitaxy, and the optical properties of GaN layers were investigated as functions of the LT AlN interlayer's thickness. By changeing the thickness of the LT AlN, we could sensitively change the peak position and the full width at half maximum (FWHM) of the donor bound exciton (I$_2$) of the GaN layers. The shift in the donor bound exciton peak was relative to the crack density due to heavy stress. In the 10-nm-thick LT AlN, a strong band-edge emission, with a full width at half maximum of the bound exciton line being as low as 21.1 mev at 11 K, was observed from the GaN layer on Si(111). 유기화학기상증착법으로 저온 AlN 중간층을 이용하여 Si (111) 기판위에 GaN 박막을 성장하고 저온 AlN 중간층 두께에 따른 광학적 특성을 연구하였다. 저온 AlN 중간층 두께에 따라 GaN 층의 donor bound exciton (I$_2$) 피크 위치와 반치폭이 민감하게 변함을 알 수 있었다. Donor bound exciton 피크의 변화는 stress 에 의한 균열 밀도 변화와 관련 있음을 확인하였다. 저온 AlN 중간층 10 nm 두께에서 가장 좋은 특성을 얻었으며 11 K에서 21.1 meV 의 반치폭을 갖는 강한 발광 피크를 보였다.

Si (111) 기판위에 AlN 버퍼층을 이용하여 성장한 GaN 박막층의 광학적인 특성

김덕규 한국물리학회 2007 새물리 Vol.54 No.6

유기화학기상증착 장비를 이용하여 Si (111) 기판위에 GaN 층을 성장 시키고 AlN 버퍼층 두께에 따른 광학적인 특성을 연구하였다. AlN 버퍼 두께가 증가함에 따라 GaN 층의 donor bound exciton 피크 위치가 선형적으로 red-shift 하였으며 반치폭은 감소하였다. Donor bound exciton 피크의 red-shift 현상은 심한 stress 에 의한 균열에 의한 것으로 판단된다. AlN 버퍼 80-nm 두께에서, photoluminescence 측정 결과 13 K 에서 17 meV 의 반치폭을 갖는 강한 발광 피크를 얻었다. AlN 버퍼 두께에 따른 GaN 층의 donor bound exciton 활성화 에너지를 평가하였다. GaN layers were grown on silicon (111) substrates with AlN buffer layers by using metalorganic vapor phase epitaxy, and the varitations in the optical properties of the GaN layer with the AlN buffer layer$^\prime$s thickness were investigated. As the AlN thickness increased, the peak position of the donor-bound exciton of the GaN layer was red-shifted linearly, and the full width at half maximum (FWHM) of the donor-bound exciton peak decreased. The red-shift of the donor-bound exciton peak was attributed to cracks due to heavy stress. In 80-nm-thick AlN, a strong band-edge emission of the GaN layer on Si (111) was observed, with the full width at half maximum of the bound-exciton line being as low as 17 mev at 13 K. The activation energy of the donor-bound exciton was evaluated for GaN layers for various AlN thicknesses.

마이크로포로세서를 利用한 直流專動機의 計數的 速度制御

金德奎 慶北工業專門大學 1979 論文集 Vol.16 No.-

Microprocessor controlled digital speed control system of chopper-fed dc motor has been designed. By keeping speed constant, the actual speed is optically measured and digitally compared in the microprocessor with the desired speed setting which was given from external keyboard. Then produced error is used to adjust the 'on-time' of SCR chopper such that the motor speed is maintained at its desired value. The prototype's steady-state error is less than 0.1%.

Si (111) 기판위에 성장한 GaN 층의 저온 AlN 중간층 두께에 따른 특성

김덕규 한국물리학회 2008 새물리 Vol.57 No.4

GaN layers were grown on silicon (111) substrates with low-temperature (LT) AlN interlayers by using metalorganic vapor-phase epitaxy, and the properties of the GaN layers were investigated for various LT AlN interlayer thicknesses. With LT AlN interlayer, cracks in the GaN layer changed sensitively. For 10-nm-thick LT AlN, the density of cracks was 5/cm, the full width at half maximum of the (002) X-ray rocking curve was 651 arcsec, and the full width at half maximum of the bound exciton line was as low as 38.1 meV at 300 K. 유기화학기상증착법으로 저온 AlN 중간층을 이용하여 Si (111) 기판위에 GaN 박막을 성장하고 저온 AlN 중간층 두께에 따른 특성을 연구하였다. 저온 AlN 중간층 두께에 따라 GaN 층의 균열이 민감하게 변함을 알 수 있었고 10 nm 두께에서 균열밀도 5/cm 의 가장 적은 균열을 얻었다. 또한, (002) X-ray rocking curve 의 full width at half maximum 측정 결과 651 arcsec 의 결정성을 갖는 박막을 얻었고 photoluminescence 측정 결과 300 K 에서 38.1 meV 의 full width at half maximum 을 얻었다.

발기부전의 선별검사로서 파파베린유도 음경발기 촬영술의 재조명

김덕규,박정하,박희승,정경우,김종성 ( Deuk Gyu Kim,Chung Ha Park,Hee Seung Park,Kyung Woo Chung,Jong Sung Kim ) 대한핵의학회 1994 핵의학 분자영상 Vol.28 No.3

To reevaluate the clinical usefulness of erection penography for diffential diagnosis of impotence, we reviewed retrospectively the data of penography in 56 patients who were diagnosed as impotence by various diagnostic workup. Twelve normal males were studied as control group. Papaverine HC1 30mg was injected into the corpus cavernosum and simultaneously Tc HAS 20mCi was injected via an antecubital vein. After injection radioactivities in the penile area were detected for 30 minutes by gamma camera and time activity curve was displayed, We defined that transit time(TT) is the time to reach peak activity and erection persistent time(EPT) is the duration of time to maintain peak activity and venous index( VI ) is the ratio of radioact,ivity(R3Q/R ,). The result.s were as follows : The TT of arteriogenic group(10.7+2.8min) was significantly increased compared with those of control and venogenic groups(P<0.05, respectively). The EPT of venogenic group (6.2+6.8min) is significantly decreased compared with those of control and arteriogenic groups(P<0.05, respectively). The TT of psychogenic(15.2+5.5min) is significantly increased compared with those of control and arteriogenic groups(P<0.05, respectively). In conclusion erection penography was very useful for the diagnosis of vascular and psychogenic impotence and for differentiation between arteriogenic and venogenic but it could not differentiate mixed type or neurogenic from vascular or psychogenic.

저온 AlN 중간층 이용하여 성장한 GaN 층의 1차 GaN 두께에 따른 특성

김덕규 한국물리학회 2008 새물리 Vol.57 No.6

GaN layers were grown on silicon (111) substrates with low-temperature (LT) AlN interlayers by using metalorganic vapor phase epitaxy, and the properties of the GaN layers as a function of the 1st GaN layer's thickness were investigated. For variious tkickness of the 1st GaN layer, the density of cracks in the GaN layer changed sensitively. For 0.2-$\mu$m-thick 1st GaN Layer, the density of cracks was 30/cm, the full width at half maximum of the (002) X-ray rocking curve was 686 arcsec, and the full width at half maximum of the bound exciton line was as low as 46.1 meV at 300 K. 유기화학기상증착법으로 저온 AlN 중간층을 이용하여 Si(111) 기판위에 GaN 박막을 성장하고 저온 AlN 중간층 아래의 1차 GaN 두께에 따른 특성을 연구하였다. 1차 GaN 두께에 따라 GaN 층의 균열이 민감하게 변함을 알 수 있었고 0.2 $\mu$m 두께에서 균열밀도 30/cm 의 가장 적은 균열을 얻었다. 또한, (002) X-ray rocking curve 의 full width at half maximum 측정 결과 686 arcsec 의 결정성을 갖는 박막을 얻었고 photoluminescence 측정 결과 300 K 에서 46.1 meV 의 full width at half maximum 을 얻었다.

In Situ Heat Treatment of ZnO:Al Thin Films Fabricated by RF Magnetron Sputtering

김덕규 한국전기전자재료학회 2017 전기전자재료학회논문지 Vol.30 No.5

ZnO:Al thin films were deposited on glass substrate by RF magnetron sputtering followed by in situ heattreatment in the same chamber. Effects of in situ heat treatment on properties of ZnO:Al thin films wereinvestigated in this study. As heat treatment temperature was increased, crystal quality was improved first and thenit was deteriorated, surface roughness was decreased, and sheet resistance was also decreased. The decrease in sheetresistance was caused by increasing carrier concentration due to decreased surface roughness. The decrease in surfaceroughness resulted in increase of transmittance. Therefore, in situ heat treatment is an effective method for obtainingfilms with better electrical characteristics.