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후속열처리 및 고온고습 조건에 따른 Cu 배선 확산 방지층 적용을 위한 ALD RuAlO 박막의 계면접착에너지에 관한 연구
이현철,정민수,배병현,천태훈,김수현,박영배,Lee, Hyeonchul,Jeong, Minsu,Bae, Byung-Hyun,Cheon, Taehun,Kim, Soo-Hyun,Park, Young-Bae 한국마이크로전자및패키징학회 2016 마이크로전자 및 패키징학회지 Vol.23 No.2
The effects of post-annealing and temperature/humidity conditions on the interfacial adhesion energies of atomic layer deposited RuAlO diffusion barrier layer for Cu interconnects were systematically investigated. The initial interfacial adhesion energy measured by four-point bending test was $7.60J/m^2$. The interfacial adhesion energy decreased to $5.65J/m^2$ after 500 hrs at $85^{\circ}C$/85% T/H condition, while it increased to $24.05J/m^2$ after annealing at $200^{\circ}C$ for 500 hrs. The X-ray photoemission spectroscopy (XPS) analysis showed that delaminated interface was RuAlO/$SiO_2$ for as-bonded and T/H conditions, while it was Cu/RuAlO for post-annealing condition. XPS O1s peak separation results revealed that the effective generation of strong Al-O-Si bonds between $AlO_x$ and $SiO_2$ interface at optimum post-annealing conditions is responsible for enhanced interfacial adhesion energies between RuAlO/$SiO_2$ interface, which would lead to good electrical and mechanical reliabilities of atomic layer deposited RuAlO diffusion barrier for advanced Cu interconnects. 차세대 반도체의 초미세 Cu 배선 확산방지층 적용을 위해 원자층증착법(atomic layer deposition, ALD) 공정을 이용하여 증착한 RuAlO 확산방지층과 Cu 박막 계면의 계면접착에너지를 정량적으로 측정하였고, 환경 신뢰성 평가를 수행하였다. 접합 직후 4점굽힘시험으로 평가된 계면접착에너지는 약 $7.60J/m^2$으로 측정되었다. $85^{\circ}C$/85% 상대습도의 고온고습조건에서 500시간이 지난 후 측정된 계면접착에너지는 $5.65J/m^2$로 감소하였으나, $200^{\circ}C$에서 500시간 동안 후속 열처리한 후에는 $24.05J/m^2$으로 계면접착에너지가 크게 증가한 것으로 평가되었다. 4점굽힘시험 후 박리된 계면은 접합 직후와 고온고습조건의 시편의 경우 RuAlO/$SiO_2$ 계면이었고, 500시간 후속 열처리 조건에서는 Cu/RuAlO 계면인 것으로 확인되었다. X-선 광전자 분광법 분석 결과, 고온고습조건에서는 흡습으로 인하여 강한 Al-O-Si 계면 결합이 부분적으로 분리되어 계면접착에너지가 약간 낮아진 반면, 적절한 후속 열처리 조건에서는 효과적인 산소의 계면 유입으로 인하여 강한 Al-O-Si 결합이 크게 증가하여 계면접착에너지도 크게 증가한 것으로 판단된다. 따라서, ALD Ru 확산방지층에 비해 ALD RuAlO 확산방지층은 동시에 Cu 씨앗층 역할을 하면서도 전기적 및 기계적 신뢰성이 우수할 것으로 판단된다.
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Hong, T.E.,Cheon, T.,Kim, S.H.,Kim, J.K.,Park, Y.B.,Kwon, O.J.,Kim, M.J.,Kim, J.J. Elsevier Sequoia 2013 Journal of alloys and compounds Vol.580 No.-
Ru-based ternary, RuAlO thin films for applications as diffusion barriers for the direct plating of Cu interconnects were grown using atomic layer deposition (ALD) by repeating super-cycles consisting of Ru and AlO<SUB>x</SUB> ALD sub-cycles at 225<SUP>o</SUP>C. The intermixing ratios of Ru and AlO<SUB>x</SUB> in the RuAlO films were controlled by changing the total number of AlO<SUB>x</SUB> ALD unit cycles at a fixed number of Ru cycles to 200. Rutherford backscattering spectrometry and secondary ion mass spectrometry showed that the Al and O content in the film increased with increasing the total number of AlO<SUB>x</SUB> ALD unit cycles but the Ru content decreased. Moreover, their relative amounts in the RuAlO films had considerable effects on the performance as a Cu diffusion barrier as well as on their properties, such as resistivity, crystallinity and microstructure. The resistivity of the RuAlO film deposited with a total number of AlO<SUB>x</SUB> unit cycles of 4 was ~125μΩcm, and its resistivity increased continuously with increasing the total number of AlO<SUB>x</SUB> unit cycles. X-ray diffraction and electron diffraction revealed a decrease in the crystallinity and grain size of the Ru film by the incorporation of AlO<SUB>x</SUB> into Ru by adding AlO<SUB>x</SUB> cycles. The performance of the RuAlO films as a Cu direct-plateable diffusion barrier in terms of both the diffusion barrier performance against Cu and the interfacial adhesion energy between Cu and SiO<SUB>2</SUB> improved with increasing the amount of AlO<SUB>x</SUB> in the RuAlO film. The direct plating and superfilling of Cu on RuAlO film was possible in a trench (80, 140nm of width and 150nm of depth) though the resistivity of the RuAlO film was as high as 210μΩcm. It was also confirmed that the no interfacial oxide was grown when the ALD-RuAlO film was deposited on Cu surface.
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Characterization of a Ru-based Ternary-oxide Thin Film for a Diffusion Barrier
홍태은,양호순,김수현 한국물리학회 2012 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.61 No.6
Ruthenium-based ternary-oxide thin films were grown by using thermal atomic layer deposition. The films were grown by repeating super-cycles consisting of Ru and Al<SUB>2</SUB>O<SUB>3</SUB> sub-cycles. X-ray diffraction showed that the structure of Ru ternary oxide thin film formed nano crystalline structure. The chemical state in oxide thin film was clearly investigated by X-ray photoelectron spectroscopy. The composition of Ru based ternary oxide film was characterized by secondary ion mass spectrometry. Quantitative analysis of thin oxide film using SIMS was calibrated by Rutherford backscattering spectrometry. Based on the results, effects on the Aluminum and oxygen incorporation into Ru were discussed.
ScienceON
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