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자기전기복합체의 비공진 및 공진 상태에서의 자기전기 결합 특성 평가 방법
파틸디팍,류정호 한국전기전자재료학회 2022 전기전자재료학회논문지 Vol.35 No.4
자기전기복합체(magnetoelectric, ME compositie)는 자왜재료와 압전재료의 결합현상을 이용하는 재료로서지난 20여 년간 이론적, 실험적으로 많은 연구가 진행되어 왔다. 자기전기복합체의 출력특성은 구성하는 소재, 계면층,복합체의 형상, 자기장하 진동모드 등의 많은 구성요소의 최적화를 통하여 급속히 향상되고 있다. 하지만 자기전기복합체의 자기전기 결합 특성 평가는 대부분의 연구들에서 구체적인 방법을 제시하지 않아 어떻게 측정한 것인지가 불명확한 경우가 많다. 본 논문에서는 자기전기복합체의 비공진, 공진상황에서 자기전기 전압계수를 어떻게 측정할 수 있는지에 대한 자세한 방법을 소개한다. 평가를 위한 샘플로서 대칭적인 구조를 가지는 Gelfenol/PMN-PZT/Gelfenol자기전기복합체를 제조하였다. 압전 재료로는 이방성의 (011) 32 모드의 PMN-PZT 압전 단결정과 자왜재료로는 Galfenol 합금을 사용하여 에폭시로 접착하였다. 컴퓨터 인터페이스로 자동화된 자기전기 전압특성 측정 시스템의 구성을 우선 설명하고, 자기전기 결합특성의 측정 방법을 단계별로 설명한다. 본 튜토리얼 논문에서는 자기전기결합 특성과 특성평가방법을 이해하고자 하는 연구자들에게 도움이 될 수 있는 평가방법의 원리와 절차를 제공하고자 하였다.
PSN-PMN-PZT 세라믹스의 Zr/Ti 비에 따른 전기적 특성과 공진주파수의 온도안정성
류주현,윤광희,민석규,이명수,서성재 한국전기전자재료학회 2000 전기전자재료학회논문지 Vol.13 No.8
In this study the temperature coefficient of resonant frequency(TC $F_{r}$) dielectric and piezoelectric properties of Pb[(S $b_{1}$2//N $b_{1}$2/)$_{0.065}$)-(Z $r_{x}$, $Ti_{1-x}$ )$_{0.90}$] $O_3$ceramics were investigated with Zr/Ti ratio. The compositions near the morphotropic phase boundary (MPB) appeared when Zr/Ti ratio was 49.5/50.5 The dielectric constant and electromechanical coupling factor( $k_{p}$) also showed the highest values of 1,257, 0.653 respectively when the Zr/Ti ratio was 49.5/50.5 Moreover the mechanical quality factor( $Q_{m}$) showed th lowest value of 713 when the Zr/Ti ratio. The temperature coefficient of resonant frequency(TC $F_{r}$) abruptly change at the morphotropic phase boundary(MPB) which existed between the rhombohedral phase with highly negative TC $F_{r}$ of -106ppm/$^{\circ}C$ and the tetragonal phase with highly positive TC $F_{r}$ of +64pp $m^{\circ}C$ as Zr/Ti ratio varied from 50/50 to 49.5/50.5.50.5..50.5.
전기방사에 의한 질화붕소 나노분말의 함량에 따른 질화붕소 나노섬유 합성 및 특성 평가
이종혁,전명표,황진아,정영근,주제욱,Lee, Jong Hyeok,Chun, Myoung Pyo,Hwang, Jin Ah,Jung, Young Geun,Chu, Jae Uk 한국전기전자재료학회 2018 전기전자재료학회논문지 Vol.31 No.7
Boron nitride (BN) nanofibers were fabricated using BN nanoparticles (70 nm) by electrospinning. Morphologies such as the diameter and density of the BN nanofibers are strongly influenced by the viscosity and dispersion state of the precursor solution. In this study, the precursor solution was prepared by ball milling BN nanoparticles and polyvinylpyrrolidone (PVP, Mw~1,300,000) in ethanol, which was electrospun and then calcined to produce BN fibers. High-quality BN nanofibers were well fabricated at a BN concentration of 15 wt% with their diameters in the range of 500 nm to 800 nm; the viscosity of the precursor solution was $400mPa{\cdot}S$. The calcination of the as-electrospun BN fibers seemed to be completed by holding them at $350^{\circ}C$ for 2 h considering the TGA data. The morphologies and phases of the BN fibers were investigated by scanning electron microscopy (SEM) and X-ray diffractometry (XRD), respectively; Fourier transform infrared (FT-IR) was also used for structure analysis.
프린지 필드에 의해 구동되는 하이브리드형 네마틱 액정 디스플레이의 전기광학 특성
정연학,김향율,이승희 한국전기전자재료학회 2002 전기전자재료학회논문지 Vol.15 No.6
Conventional hybrid aligned nematic liquid crystal display (HAN-LCD) has several advantages on low operating voltage, fast response time and rubbing free on one substrate. We have fabricated a new hybrid aligned nematic display driven by fringe field. The new device exhibits much wider viewing: angle than that of the conventional HAN mode, owing to almost in-plane rotation of the LC director. Furthermore, we have developed the device that reveals more efficient electro-optic characteristics by placing common electrode on top and bottom substrates. In this paper, the electro-optic characteristics of the novel cell are investigated.
PNW-PMN-PZT세라믹스를 이용한 윤곽진동모드 압전트랜스포머의 전기적특성
류주현,오동언 한국전기전자재료학회 2002 전기전자재료학회논문지 Vol.15 No.7
In this study, microstructural and piezoelectric characteristics of PNW-PMN-PZT ceramics manufactured using attrition milling method were investigated. Sintering temperature of the ceramics was varied from $1080^{\circ}C$ to $1240^{\circ}C$. With increasing sintering temperature, dielectric constant increased. In the specimen sintered at $1120^{\circ}C$, electromechanical coupling factor(Kp) and density showed the maxinum values of 0.546 and 7.78[$g/\textrm{cm}^3$], respectively. In the specimen sintered at $1160^{\circ}C$, mechanical quality factor(Qm) also showed the maxinum value of 1,943. Contour vibration mode piezoelectric transformer with the size of $27.5{\times}27.5{\times}2.5mm$ using PNW-PMN-PZT ceramics was manufactured and its driving characteristics for T5 fluorescent lamp was investigated. Taking into consideration temperature rise of 6.8[$^{\circ}C$] and efficiency of 98.23%, it can be concluded that the transformer is suitable for driving the T5 fluorescent lamp.
전자계-촉매형 플라즈마 반응기의 질소 산화물 제거 특성
이현수,박재윤,이동훈,한병성 한국전기전자재료학회 2002 전기전자재료학회논문지 Vol.15 No.7
This study is to develop electromagnetic-catalyst application plasma reactors for indoor air purification. Nitrogen Oxide(NOx) removal characteristics are measured in the electromagnetic catalyst application plasma reactors with various parameters and the effect of catalyst or/and magnetic field are investigated on the NOx removal. And AC or DC high voltage is applied for corona discharge, flow rates are 150~1500 $\ell/min$ and NO initial concentration is about 10 ppm. $Mn0_2$ and $TiO_2$ catalysts to increase NOx removal rate are used. In the results, NOx removal rate by AC power is about 10 % higher than that by DC power under the experimental condition of 700 $\ell/min$, 5 magnets, $MnO_2$ and $Ti)_2$ catalysts. When magnet is applied to the reactor, NOx removal rate increased. Also, the reactor with $MnO_2$ and $Ti)_2$ catalyst and magnet have the best removal rate.
적층형 세라믹 액츄에이터의 세라믹-전극간 계면이 전기적 특성에 미치는 영향에 대한 연구
하문수,정순종,송재성,이재신 한국전기전자재료학회 2002 전기전자재료학회논문지 Vol.15 No.10
The polarization and strain behavior of multilayer ceramic actuators fabricated by tape casting using a PNN-PZT ceramics were investigated in association with electrode size and internal layer number. Spontaneous polarization and strain decreased with increasing electrode size. In addition, the increase of internal layer number brought reduced spontaneous polarization and increased the field-induced strain. Because the actuators structure is designed to stack ceramic layer and electrode layer alternatively, the ceramic-electrode interfaces may act as a resistance to motion of domain wall. To analyze the effect of ceramic-electrode interface, the diffraction intensity ratio of (002) to (200) planes was calculated from X-ray diffraction patterns of samples subjected to a voltage of 200 V. The diffraction intensity ratio of (002) to (200) planes was decreased with increasing electrode size and internal layer number. The diffraction intensity ratio and straining behavior analyses indicate that the Polarization and strain were affected by the amount of 90°domain decreasing with increasing electrode size and internal layer number. Consequently, the change of polarization and displacement with respect to electrode size and layer number is likely to be caused by readiness of the domain wall movement around the interface.
SDB와 전기화학적 식각정지에 의한 벌크 마이크로머신용 3차원 미세구조물 제작
정귀상,김재민,윤석진 한국전기전자재료학회 2002 전기전자재료학회논문지 Vol.15 No.11
This paper reports on the fabrication of free-standing microstructures by DRIE (deep reactive ion etching). SOI (Si-on-insulator) structures with buried cavities are fabricated by SDB (Si-wafer direct bonding) technology and electrochemical etch-stop. The cavity was formed the upper handling wafer by Si anisotropic etch technique. SDB process was performed to seal the formed cavity under vacuum condition at -760 mmHg. In the SDB process, captured air and moisture inside of the cavities were removed by making channels towards outside. After annealing (100$0^{\circ}C$, 60 min.), the SDB SOI structure with a accurate thickness and a good roughness was thinned by electrochemical etch-stop in TMAH solution. Finally, it was fabricated free-standing microstructures by DRIE. This result indicates that the fabrication technology of free-standing microstructures by combination SDB, electrochemical etch-stop and DRIE provides a powerful and versatile alternative process for high-performance bulk micromachining in MEMS fields.
공정 변수에 따른 비정질 인듐갈륨징크옥사이드 산화물 반도체 트랜지스터의 전기적 특성 연구
정유진,조경철,김승한,이상렬,Chong, Eu-Gene,Jo, Kyoung-Chol,Kim, Seung-Han,Lee, Sang-Yeol 한국전기전자재료학회 2010 전기전자재료학회논문지 Vol.23 No.5
Thin-film transistors (TFTs) were fabricated using amorphous indium gallium zinc oxide (a-IGZO) channels by rf-magnetron sputtering at room temperature. We have studied the effect of oxygen partial pressure on the threshold voltage($V_{th}$) of a-IGZO TFTs. Interestingly, the $V_{th}$ value of the oxide TFTs are slightly shifted in the positive direction due to increasing $O_2$ partial pressure from 0.007 to 0.009 mTorr. The device performance is significantly affected by varying $O_2$ ratio, which is closely related with oxygen vacancies provide the needed free carriers for electrical conduction.