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Rapid and Accurate Measurement of Ideality Factor and Parasitic Resistances of Thin Film Solar Cells
Park, Sungeun,Kim, Soo Min,Park, Se Jin,Bae, Soohyun,Park, Hyomin,Nam, Jung gyu,Lee, Dongho,Yang, Jung Yup,Kim, Dong Seop,Mo, Chanbin,Kim, Young-Su,Kim, Jihyun,Lee, Hae-Seok,Kang, Yoonmook The Electrochemical Society 2018 ECS journal of solid state science and technology Vol.7 No.6
<P>The sunshade method for the measurement of the ideality factor and resistances of solar cells is commonly used in silicon solar cells. However, the method is rarely employed for thin-film solar cells. In this paper, the sunshade method is applied to CIGS solar cells, and it is shown that the three major assumptions of the method remain valid for CIGS solar cells. The extracted parameters are compared to those calculated using other common methods, and the ideality factors and R-s values are quickly determined and found to be nearly the same as those extracted through illuminated I-V fitting and dark I-V fitting. (C) 2018 The Electrochemical Society.</P>
Park, Sungeun,Park, Hyomin,Kim, Dongseop,Yang, JungYup,Lee, Dongho,Kim, Young-Su,Kim, Hyun-Jong,Suh, Dongchul,Min, Byoung Koun,Kim, Kyung Nam,Park, Se Jin,Kim, Donghwan,Lee, Hae-Seok,Nam, Junggyu,Kang Springer-Verlag 2018 METALS AND MATERIALS International Vol.24 No.3
<P>Passivated emitter and rear contact (PERC) is a promising technology owing to high efficiency can be achieved with p-type wafer and their easily applicable to existing lines. In case of using p-type mono wafer, 0.5-1% efficiency increase is expected with PERC technologies compared to existing Al BSF solar cells, while for multi-wafer solar cells it is 0.5-0.8%. We addressed the optimization of PERC solar cells using the Al paste. The paste was prepared from the aluminum-silicon alloy with eutectic composition to avoid the formation of voids that degrade the open-circuit voltage. The glass frit of the paste was changed to improve adhesion. Scanning electron microscopy revealed voids and local back surface field between the aluminum electrode and silicon base. We confirmed the conditions on the SiNx passivation layer for achieving higher efficiency and better adhesion for long-term stability. The cell characteristics were compared across cells containing different pastes. PERC solar cells with the Al/Si eutectic paste exhibited the efficiency of 19.6%.</P>
레이져를 이용한 도핑 특성과 선택적 도핑 에미터 실리콘 태양전지의 제작
박성은(Sungeun Park),박효민(Hyomin Park),남정규(Junggyu Nam),양정엽(JungYup Yang),이동호(Dongho Lee),민병권(Byoung Koun Min),김경남(Kyung Nam Kim),박세진(Se Jin Park),이해석(Hae-Seok Lee),김동환(Donghwan Kim),강윤묵(Yoonmook Kang),김동 한국태양광발전학회 2016 Current Photovoltaic Research Vol.4 No.2
Laser-doped selective emitter process requires dopant source deposition, spin-on-glass, and is able to form selective emitter through SiNx layer by laser irradiation on desired locations. However, after laser doping process, the remaining dopant layer needs to be washed out. Laser-induced melting of pre-deposited impurity doping is a precise selective doping method minimizing addition of process steps. In this study, we introduce a novel scheme for fabricating highly efficient selective emitter solar cell by laser doping. During this process, laser induced damage induces front contact destabilization due to the hindrance of silver nucleation even though laser doping has a potential of commercialization with simple process concept. When the laser induced damage is effectively removed using solution etch back process, the disadvantage of laser doping was effectively removed. The devices fabricated using laser doping scheme power conversion efficiency was significantly improved about 1% abs. after removal the laser damages.
Sungeun Park,Hyo Min Park,Yoonmook Kang,Hae-Seok Lee,Donghwan Kim 한국물리학회 2016 Current Applied Physics Vol.16 No.9
The purpose of this work is to investigate a back surface field (BSF) at a number of wafer resistivities for industrial crystalline silicon solar cells. As indicated in this manuscript, doping a crucible-grown Czochralski (Cz)-Si ingot with Ga offers a sure way of eliminating light-induced degradation (LID) because LID is composed of B and O complex. However, the low segregation coefficient of Ga in Si causes a much wider resistivity variation in the Ga-doped Cz-Si ingot. This resistivity variation in a Cz-Si wafer at different locations varies the performance, as is already known. In the light of a B-doped wafer, we made wider resistivity in Si ingot; we investigated how resistivities affect the solar cell performance as a function of BSF quality.
Effect of sorbitol doping in PEDOT:PSS on the electrical performance of organic photovoltaic devices
Sungeun Park,탁성주,김동환 한국물리학회 2011 Current Applied Physics Vol.11 No.6
Organic photovoltaic cells have important advantages, such as low cost and mechanical flexibility. The conducting polymer poly(3,4 ethylenedioxy-thiophene):poly(styrene sulfonate) (PEDOT:PSS) has been widely used as an interfacial layer or a polymer electrode in polymer electronic devices, such as photovoltaic devices and light-emitting diodes. In this report, we discuss the direct current (DC)conductivity of PEDOT:PSS films containing various weight ratios of sorbitol dopant. The work function is shown to steadily decrease with increasing dopant content. With different dopant contents, illuminated current―voltage photovoltaic characteristics were observed. Ultraviolet photoelectron spectroscopy (UPS) analysis revealed that the work function of the PEDOT:PSS was affected by its sorbitol content. The morphologies of the doped PEDOT:PSS films were characterized by atomic force microscopy (AFM). For the device fabrication, we made organic photovoltaic cells by a spin-coating process and Al deposition by thermal evaporation. The sorbitol dopant is able to improve the efficiency of the device.
Park, C. Hyung Keun,Lee, Jae Won,Lee, Sang Yeol,Shim, Se-Hoon,Moon, Jung-Joon,Paik, Jong-Woo,Cho, Seong-Jin,Kim, Shin Gyeom,Kim, Min-Hyuk,Kim, Seokho,Park, Jae-Hyun,You, Sungeun,Jeon, Hong Jin,Ahn, Yo Wolters Kluwer Health, Inc. All rights reserved. 2018 Journal of nervous and mental disease Vol.206 No.11
ABSTRACT: There is a paucity of research characterizing suicide-related factors in victims of early trauma (ET). This cross-sectional study investigated an increase in trait impulsivity of ET victims with suicidal ideation or behavior and its role in severity of psychopathologies and experienced stress. Using data of 401 Korean suicidal ideators and attempters, trait impulsivity, severity of psychopathologies, and stress levels in addition to sociodemographic and clinical characteristics were compared between the ET group and the no ET group. Three first-order factors of trait impulsivity measured in Barratt Impulsive Scale-11 (cognitive instability, motor, and [lack of] perseverance) as well as depression, anxiety, overall stress level, and stress from social relationships were significantly elevated in the ET group. Owing to the long-lasting neurobiological influences of ET, it is recommended clinically that victims be carefully monitored for the development of mental distress, such as depression and anxiety, even in adulthood.
Park, Sungeun,Park, Hyomin,Kang, Yoonmook,Lee, Hae-Seok,Kim, Donghwan Elsevier 2016 CURRENT APPLIED PHYSICS Vol.16 No.9
<P>The purpose of this work is to investigate a back surface field (BSF) at a number of wafer resistivities for industrial crystalline silicon solar cells. As indicated in this manuscript, doping a crucible-grown Czochralski (Cz)-Si ingot with Ga offers a sure way of eliminating light-induced degradation (LID) because LID is composed of B and O complex. However, the low segregation coefficient of Ga in Si causes a much wider resistivity variation in the Ga-doped Cz-Si ingot. This resistivity variation in a Cz-Si wafer at different locations varies the performance, as is already known. In the light of a B-doped wafer, we made wider resistivity in Si ingot; we investigated how resistivities affect the solar cell performance as a function of BSF quality. (C) 2016 Elsevier B.V. All rights reserved.</P>
Park, Hyomin,Park, Sungeun,Lee, Seunghun,Kang, Yoonmook,Lee, Hae-Seok,Kim, Donghwan American Scientific Publishers 2016 Journal of Nanoscience and Nanotechnology Vol.16 No.10
<P>In this study, the effect of acceleration voltage on emitter properties was investigated. Phosphorus ion was implanted into a silicon substrate at acceleration voltages of 7, 13, and 20 KeV. As the acceleration voltage increased, the amorphous layer thickness increased from 14 to 33 nm. The projected ranges were around 10 to 13 nm, and little change was observed with the acceleration voltage. The as-implanted phosphorus concentrations as well as the junction depth were higher for higher acceleration voltages. As the phosphorus acceleration voltage increased, a larger and rougher area of contrast was observed at the amorphous/crystalline interface. After thermal treatment at 750 degrees C, strains were observed by high-resolution X-ray diffraction for all acceleration conditions. It was observed that a higher acceleration voltage resulted in a higher intensity of rocking curves with more fringes. Sheet resistances decreased rapidly after thermal treatment above 850 degrees C. The sheet resistance decreased with increasing annealing temperature, while at every temperature, the sample at 7 KeV acceleration voltage showed a higher sheet resistance than the samples at 13 and 20 KeV. The mobility increased for temperatures up to 850 degrees C but the carrier concentrations showed little change. Above 850 degrees C, the mobility did not show much change, but the carrier concentration increased. It is considered that the dopant activation was highly affected by the carrier concentration and not by the mobility.</P>