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Rhee, Jihyun,Choi, Sungju,Kang, Hara,Kim, Jae-Young,Ko, Daehyun,Ahn, Geumho,Jung, Haesun,Choi, Sung-Jin,Myong Kim, Dong,Kim, Dae Hwan Elsevier 2018 Solid-State Electronics Vol.140 No.-
<P><B>Abstract</B></P> <P>Experimental extraction of the electron trap parameters which are associated with charge trapping into gate insulators under the positive bias temperature stress (PBTS) is proposed and demonstrated for the first time in amorphous indium-gallium-zinc-oxide thin-film transistors. This was done by combining the PBTS/recovery time-evolution of the experimentally decomposed threshold voltage shift (ΔV<SUB>T</SUB>) and the technology computer-aided design (TCAD)-based charge trapping simulation. The extracted parameters were the trap density (N<SUB>OT</SUB>) = 2.6×10<SUP>18</SUP> cm<SUP>−3</SUP>, the trap energy level (ΔE<SUB>T</SUB>) = 0.6 eV, and the capture cross section (σ<SUB>0</SUB>) = 3 × 10<SUP>−19</SUP> cm<SUP>2</SUP>.</P> <P>Furthermore, based on the established TCAD framework, the relationship between the electron trap parameters and the activation energy (E<SUB>a</SUB>) is comprehensively investigated. It is found that E<SUB>a</SUB> increases with an increase in σ<SUB>0</SUB>, whereas E<SUB>a</SUB> is independent of N<SUB>OT</SUB>. In addition, as ΔE<SUB>T</SUB> increases, E<SUB>a</SUB> decreases in the electron trapping-dominant regime (low ΔE<SUB>T</SUB>) and increases again in the Poole–Frenkel (PF) emission/hopping-dominant regime (high ΔE<SUB>T</SUB>). Moreover, our results suggest that the cross-over ΔE<SUB>T</SUB> point originates from the complicated temperature-dependent competition between the capture rate and the emission rate. The PBTS bias dependence of the relationship between E<SUB>a</SUB> and ΔE<SUB>T</SUB> suggests that the electric field dependence of the PF emission-based electron hopping is stronger than that of the thermionic field emission-based electron trapping.</P> <P><B>Highlights</B></P> <P> <UL> <LI> The use of ΔV<SUB>T</SUB> de-embedded from the measured PBTS ΔV<SUB>T</SUB> which is associated only with the charge trapping into gate insulator. </LI> <LI> Detailed and clear procedure of extracting the gate insulator electron trap parameters in IGZO thin-film transistors. </LI> <LI> Analysis of the relationship between activation energy and electron trap parameters. </LI> <LI> Useful in the joint-optimization of gate insulator and active films in highly stable IGZO thin-film transistors. </LI> </UL> </P>
Some Generalized Fixed Point Theorems
Rhee, Sang-Hun,Lee, Hung-Hwan 慶北大學校 1976 論文集 Vol.22 No.-
완비된 거리공간(X,d)에서 그 자신으로 가는 함수의 집합 {U_i 1≤i≤p}와 {V_μ 1≤μ≤q}의 공통 고정점에 관한 정리를 얻어 최근에 Pacific.J.Math.에서 Chi Song Wong 이 밝힌 고정점에 관한 정리를 더욱 일반화 시켰다. 그리고 고정점 {u_n} (n=1,2…)를 각각 갖는 함수의 열{T_n} (n=1,2…)이 어떤 함수 T에 수렴할 때 고정점의 열 {U_n}이 T의 고정점 u에 수렴하겠는가? 하는 문제를 {T_n}이 T에 일양수렴하면서 T가 주어진 조건을 만족하면 그렇다 라고 밝혔다.
Lipid emulsion therapy of local anesthetic systemic toxicity due to dental anesthesia
Rhee, Seung-Hyun,Park, Sang-Hun,Ryoo, Seung-Hwa,Karm, Myong-Hwan The Korean Dental Society of Anesthsiology 2019 Journal of Dental Anesthesia and Pain Medicine Vol.19 No.4
Local anesthetic systemic toxicity (LAST) refers to the complication affecting the central nervous system (CNS) and cardiovascular system (CVS) due to the overdose of local anesthesia. Its reported prevalence is 0.27/1000, and the representative symptoms range from dizziness to unconsciousness in the CNS and from arrhythmias to cardiac arrest in the CVS. Predisposing factors of LAST include extremes of age, pregnancy, renal disease, cardiac disease, hepatic dysfunction, and drug-associated factors. To prevent the LAST, it is necessary to recognize the risk factors for each patient, choose a safe drug and dose of local anesthesia, use vasoconstrictor, confirm aspiration and use incremental injection techniques. According to the treatment guidelines for LAST, immediate application of lipid emulsion plays an important role. Although lipid emulsion is commonly used for parenteral nutrition, it has recently been widely used as a non-specific antidote for various types of drug toxicity, such as LAST treatment. According to the recently published guidelines, 20% lipid emulsion is to be intravenously injected at 1.5 mL/kg. After bolus injection, 15 mL/kg/h of lipid emulsion is to be continuously injected for LAST. However, caution must be observed for >1000 mL of injection, which is the maximum dose. We reviewed the incidence, mechanism, prevention, and treatment guidelines, and a serious complication of LAST occurring due to dental anesthesia. Furthermore, we introduced lipid emulsion that has recently been in the spotlight as the therapeutic strategy for LAST.
Rhee, Seung-Hyun,Park, Sang-Hun,Ha, Sung-Ho,Ryoo, Seung-Hwa,Karm, Myong-Hwan,Kim, Hyun Jeong,Seo, Kwang-Suk The Korean Dental Society of Anesthsiology 2019 Journal of Dental Anesthesia and Pain Medicine Vol.19 No.5
Complex regional pain syndrome (CRPS) is rare, characterized by pain from diverse causes, and presents as extreme pain even with minor irritation. General anesthesia may be required for dental treatment because the pain may not be controlled with local anesthesia. However, treatment under general anesthesia is also challenging. A 38-year-old woman with CRPS arrived for outpatient dental treatment under general anesthesia. At the fourth general anesthesia induction, she experienced severe pain resulting from her right toe touching the dental chair. Anesthesia was induced to calm her and continue the treatment. After 55 minutes of general anesthesia, the patient still complained of extreme toe pain. Subsequently, two administrations for intravenous sedation were performed, and discharge was possible in the recovery room approximately 5 h after the pain onset. The pain was not located at the dental treatment site. Although the major factor causing pain relief was unknown, ketamine may have played a role.
Sung-Hun Lim,Jin-Seok Kim,Jong-Fil Moon,Jae-Chul Kim,Sang-Bong Rhee,Chul-Hwan Kim,Ok-Bae Hyun IEEE 2009 IEEE transactions on applied superconductivity Vol.19 No.3
<P>We suggested that the neutral line is a more effective location for a superconducting fault current limiter (SFCL) in a three-phase power system. To confirm it, we analyzed the quench and recovery characteristics of SFCL applied into the neutral line in cases of non-symmetrical ground faults, such as single line-to-ground and double line-to-ground faults. Through a comparative analysis based on the experimental results for two SFCLs applied either to the neutral line or to the three-phase power line, it was confirmed that the SFCL applied into the neutral line of the power system was more advantageous from the viewpoint of both the practical use of the SFCL and the SFCL's coordination with other related protective devices in the power system.</P>