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진호,정윤환,박춘배 한국전기전자재료학회 2009 Transactions on Electrical and Electronic Material Vol.10 No.2
The electrical stability of ZnO: Al thin films deposited on glass substrate by the RF magnetron sputtering method have been modified by a hydrogen annealing treatment and SiO2 protection layer. AZO thin films were deposited at room temperature and different RF powers of 50, 100, 150, and 200 W to optimize the AZO film growth condition. The lowest value of resistivity of 9.44×10-4 Ωcm was obtained at 2 mtorr, room temperature, and a power level of 150 W. Then, the AZO thin films were annealed at 250-400 ºC for 1 h in hydrogen ambient. The minimum resistivity obtained was 8.32×10-4 Ωcm as-annealed at 300 ºC. The electrical properties were enhanced by the hydrogen annealing treatment. After a 72 h damp-heat treatment in harsh conditions of a water steam at 110 ºC for four representative samples, a degradation of electrical properties was observed. The sample of hydrogen-annealed AZO thin films with SiO2 protection layer showed a slight degradation ratio (17 %) of electrical properties and a preferable transmittance of 90 %. The electrical stability of AZO thin films had been modified by hydrogen annealing treatment and SiO2 protection layer.
진호,한원용,이서구,이우백,JIN HO,HAN WONYONG,LEE SEOGU,LEE WOO-BAIK 한국천문학회 1998 天文學論叢 Vol.13 No.1
Korea Astronomy Observatory (KAO) recently developed a new model of CCD imaging system for astronomical purpose. This paper presents system structure and electrical circuit descriptions with the performance of the CCD imaging system. The developed system can handle astronomical image acquisition with additional functions of on-chip binning, sub-image acquisition using a SITe $1024\times1024$ CCD chip. Particularly the controller design of the system allows us great flexibility and versatility with the software system control and it is possible to cope with any format CCDs by any manufactures, in principle. The system performances are derived by mean variance test in our laboratory, which shows that the total system noise 10.5e-(R.M.S), Gain 1.9e-/ ADD, non-linearity $0.37\%$