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ISO 9000 인증체계가 국내 전문건설업체의 건설공사 품질관리에 미치는 영향에 관한 연구
박찬식,조중열 중앙대학교 생산공학연구소 1997 생산공학연구소 논문집 Vol.6 No.1
본 연구는 국내 전문건설업체를 대상으로 ISO 9000 시리즈의 품질인증을 취득한 업체를 대상으로, 구조화된 설문지를 이용한 직접면담조사 방법과 통계분석 기법을 이용하여, ISO 9000 인증체계가 전문건설업체의 품질관리 이행에 미친 기여도 및 난이도 등을 분석하여 정량적인 파급효과와 객관화한 개선방안을 제시하였다. The domestic construction market is opened according to the government supply agreement under WTO structure. Recently the ISO 9000 certification is adapted in the industry and widened its use as a means of verifying a company's external credit and as a prerequisite in getting construction order. Also, the system is required to most construction works in the world construction market, specially in the european, middle-eastern, and south-eastern countries. The domestic 36 speciality contractors were interviewed with a structured questionnaire and statistical analysis were performed to investigate the ISO 9000 certification impacts on their quality management.
유덕연,조중열,김형주,김준영 한국반도체디스플레이기술학회 2014 반도체디스플레이기술학회지 Vol.13 No.1
ZnO is a wide bandgap (3.3 eV) semiconductor with high mobility and good optical transparency. However, off-current characteristics of ZnO thin-film transistor (TFT) need improvements. In this work we studied the variation in ZnO TFT current under different annealing conditions. Annealing usually modifies gas adsorption at grain boundaries of ZnO. When oxygen is adsorbed, electron density decreases due to strong electronegativity of the oxygen, and TFT current decreases as a result. Our experiments showed that current increased after vacuum annealing and decreased after air annealing. We explain that the change of off-current is caused by the desorption and adsorption of oxygen at the grain boundaries.
세라믹 패키지를 이용한 shunt 저항의 온도 특성 개선
강두원,조중열 한국반도체디스플레이기술학회 2015 반도체디스플레이기술학회지 Vol.14 No.3
Electric power in large devices is controlled by digital circuits, such as switching mode power supply. This kind of power circuits require accurate current sensor for power distribution. We studied characteristics of shunt resistor, which has many advantages for commercial application compared to Hall-effect current sensor. We applied ceramic package to the shunt resistor. Ceramic package has good thermal conductivity compared to plastic package, and this point is important for space requirement in Printed Circuit Board (PCB). Another advantage of the ceramic package is that surface mount technology (SMT) can be used for production. Our experimental results showed that the ceramic packaged resistor showed about 50% lower temperature than the plastic packaged one. Burning point and frequency characteristics are also discussed.
Zn 타겟을 이용한 ZnO 박막트랜지스터의 스퍼터링 성장
우맹,조중열 한국반도체디스플레이기술학회 2014 반도체디스플레이기술학회지 Vol.13 No.3
Flat panel displays fabricated on glass substrate use amorphous Si for data processing circuit. Recent progress in display technology requires a new material to replace the amorphous Si, and ZnO is a good candidate. ZnO is a wide bandgap (3.3 eV) semiconductor with high mobility and good optical transparency. ZnO is usually grown by sputtering using ZnO ceramic target. However, ceramic target is more expensive than metal target, and making large area target is very difficult. In this work we studied characteristics of ZnO thin-film transistor grown by rf sputtering using Zn metal target and CO2. ZnO film was grown at 450OC substrate temperature, with -70 V substrate bias voltage applied. By using these methods, our ZnO TFT showed 5.2 cm2/Vsec mobility, 3x106 on-off ratio, and -7 V threshold voltage.
MOCVD로 제작한 ZnO의 성장온도에 따른 특성 변화
서현석,정의혁,조중열,최연익,서오권,Seo Hyun-Seok,Jeong Eui-Hyuk,Jo Jung-Yol,Choi Yearn-Ik,Seo O-Gweon 한국반도체디스플레이기술학회 2005 반도체디스플레이기술학회지 Vol.4 No.4
Characteristics of ZnO films grown on $Si-SiO_2$ substrates at temperatures of $200\sim400^{\circ}C$ by metalorganic chemical vapor deposition were investigated. The growth rates and mobilities of ZnO films were dependent on growth temperatures. The field-effect mobilities measured in thin-film transistor structure were $15cm^2/Vsec$.
전자 조사된 $p^+-n^-$ 접합 다이오드의 결함 특성과 전기적 성질
엄태종,강승모,김현우,조중열,김계령,이종무 한국진공학회 2004 Applied Science and Convergence Technology Vol.13 No.1
It is essential to increase the switching speed of power devices to reduce the energy loss because high frequency is commonly used in power device operation these days. In this work electron irradiation has been conducted to reduce the lifetime of minority carriers and thereby to increase the switching speed of a$p^+- n^-$ junction diode. Effects of electron irradiation on the electrical properties of the diode are reported The switching speed is effectively increased. Also the junction leakages and the forward voltage drop which are anticipated to increase are found to be negligible in the $p^+- n^-$ junction diodes irradiated with the optimum energy and dose. The analysis results of DLTS and C-V profiling indicate that the defects induced by electron irradiation in the silicon substrate are donor-like ones which have the energy levels of 0.284 eV and 0.483 eV. Considering all the experimental results in this study, it might be concluded that electron irradiation is a very useful technique in improving the switching speed and thereby reducing the energy loss of $p^+- n^-$ junction diode power devices. 오늘날 전력소자의 작동에 고주파를 사용하기 때문에 에너지 손실을 줄이기 위해 전력소자의 스위칭 속도를 증가시키는 것은 필수적이다. 본 연구에서는 $p^+- n^-$ 접합 다이오드의 스위칭 속도를 증가시킬 목적으로 minority carrier의 수명을 감소시킬 수 있는 전자조사를 실시하였다. 다이오드의 전기적 성질에 대한 전자조사의 효과를 나타냈다. 스위칭 속도는 효과적으로 증가하였다. 또한 증가될 것으로 예상되는 접합 누설 전류와 전자조사 후 정전압강하는 최적 조건의 에너지와 dose량으로 조사된 $p^+- n^-$접합 다이오드에서는 무시할 수 있는 정도로 나타났다. DLTS와 C-V 분석은 실리콘 기판에서 전자조사로 감소된 결함은 0.284eV와 0.483eV의 에너지 준위를 갖는 donor-like 결함인 것을 보여준다. 본 연구에서의 실험 결과를 고려해 보면, 전자조사는 $p^+- n^-$ 접합 다이오드 전력 소자의 스위칭 속도를 증가시켜 에너지 손실을 감소시킬 수 있는 가장 유용한 기술이라고 결론지을 수 있다.