고객불량행동과 돌봄노동자의 직무만족: 감정부조화의 매개효과와 인지된 감정노동자 보호조치의 조절효과

조규준(Kyujun Cho),정흥준(Heung-Jun Jung) 한국경영학회 2023 經營學硏究 Vol.52 No.6

Customer misbehavior has long been considered a problem, as it is associated with human rights violations such as verbal and physical violence that care workers experience while dealing with customers. As is well known, customer misbehavior makes care workers feel disappointed in their jobs, which lowers their overall job satisfaction. Therefore, this study analyzed job satisfaction, emotional harmony, and perceived emotional worker protection measures in response to customer misbehavior among 271 care workers. First, customer misbehavior was found to have a negative relationship with job satisfaction. Care workers’ emotional dissonance was found to mediate the relationship between customer misbehavior and job satisfaction. The mediating effect can be interpreted as a negative psychological impact of customer misbehavior on care workers, which ultimately leads to a negative impact on job satisfaction. Finally, care workers’ perceived emotional labor protection policies play a moderating role in the relationship between emotional dissonance and job satisfaction, mitigating the effect of emotional distress on job satisfaction. This study contributes to the field of employment relations research by examining institutional effects such as emotional labor protection policies in situations where care work is becoming more important, such as the aging population.

직장 내 괴롭힘이 직무태도에 미치는 영향

조규준(Kyujun Cho),정흥준(Heung-Jun Jung),신민주(Minju Shin) 한국인사조직학회 2023 인사조직연구 Vol.31 No.1

직장 내 괴롭힘은 상사의 권위적 업무처리 방식과 관련되어 있으며 오랫동안 조직의 고질적 문제로 여겨져 왔다. 정부는 직장 내 괴롭힘으로 인해 구성원의 이탈이 잦고 사회적으로도 자성의 목소리가 높아짐에 따라 2019년 괴롭힘 금지법을 제정하여 조직 내 괴롭힘 가해자를 두둔하고 피해자를 방치해온 관행을 금지하였다. 그러나 아직까지 그 실효성은 미미하며 여전히 많은 직장에서 직장 내 괴롭힘을 둘러싼 갈등이 많다. 직장 내 괴롭힘은 개인에게 분노, 두려움, 슬픔, 죄책감 등을 느끼게 하고 조직에는 반생산적 업무 행동을 유발하여 업무성과에 부정적 영향을 미친다. 이에 본 연구는 콜센터 상담사 1,932명을 대상으로 직장 내 괴롭힘에 따른 직무태도, 자아존중감, 노조지원인식을 분석하였다. 먼저, 직장 내 괴롭힘이 높을 경우, 직무태도에 부(-)의 관계가 있을 것으로 예상하였다. 직장 내 괴롭힘이 높을 경우, 개인의 자아존중감이 훼손돼 직무태도에 부(-)의 관계가 있을 것으로 예상하고 자아존중감의 매개적 역할을 가설로 제안하였다. 마지막으로 노조지원인식이 높을 경우, 노조가 지원군 역할로써 인식돼 직장 내 괴롭힘에 노출되더라도 직무태도에 미치는 부(-)의 관계를 완화할 수 있을 것으로 보았다. 분석 결과, 제안된 가설들이 지지되었다. 본 연구는 직장 내 괴롭힘을 제어하는 상황 요인으로서 노동조합의 의미 있는 역할을 확인한 점에서 시사점이 있다. 직장 내 괴롭힘에 대해 일터에서 해결방안을 마련하기 위해 오랫동안 논의가 이어져 왔음에도 불구하고 인사조직 측면의 시도는 다소 제한적이었는데, 자아존중감과 노조지원에 초점을 두어 미래과제를 제시한 점에서 학문적 시사점을 가진다. Bullying in the workplace has long been regarded as an endemic problem in organizations and not just as an individual's exceptional or deviant behavior. Bullying in the workplace causes individuals to experience anger, fear, sadness, and guilt, and it increases counterproductive work behavior in an organization, which negatively affects both work and non-work performance. Given these contexts, we analyzed job attitudes, self-esteem, and perceptions of union support according to workplace bullying among 1,932 call-center counselors. To summarize the analysis results, first, when the occurrence of workplace bullying was high, it was expected that there would be a negative (-) relationship with job attitude. In addition, when the occurrence of workplace bullying is high, individual self-esteem is damaged, and it is expected that there will be a negative (-) relationship with job attitude, and the mediating role of self-esteem is proposed as a hypothesis. Lastly, if the awareness of union support is high, it can be expected that the union will be recognized as occupying the role of a supporter and that, even if exposed to workplace bullying, the negative relationship with job attitude can be alleviated. As a result of the analysis, the proposed hypothesis was supported, and the results were discussed in the research implications.

일중독과 물질주의가 브랜드 의존성에 미치는 영향에 관한 연구

조규준(Cho, Kyujun):송수진(Song, Sujin*) 한국소비문화학회 2017 소비문화연구 Vol.20 No.3

오늘날 소비자들은 과도한 업무량과 일중독에 시달리고 있다. 그에 따라, 강한 노동 강도를 상쇄할만한 정서 적, 물질적 소비 및 자기 선물의 욕구 또한 증가하고 있다. 그러나 마케팅과 소비 행동 유관 분야에서 일중독이 사람들의 소비 성향과 브랜드 의존도에 어떠한 영향을 미치는 지에 대한 연구는 희소하다. 본 연구는 일중독과 물질주의가 소비자-브랜드 관계에 영향을 미치는지 이론적 배경과 선행 연구를 통해 탐색 하고, 도출된 가설을 직장인들을 대상으로 검증하였다. 직장인 181명을 대상으로 한 설문을 통해, 과도한 일중독은 물질주의적 성향과 긍정적인 관련이 있고, 이러한 물질주의적 성향을 통해 일중독이 심할수록 브랜드 의존성이 증가하는 것으로 나타났다. 조직 속의 개인과 시장 속의 소비자들이 분리되지 않는 유기적인 존재임에 착안하여, 일중독이 물질주의적 성향에 미치는 영향, 나아가 소비자-브랜드 관계에 끼치는 영향을 탐구 했다. 기존의 조직분야에서 다루던 개인의 일중독을 소비자 행동을 이해하는 요인으로 확장하였고, 시장 바깥에서 일어나는 현대 소비 사회의 주요한 특징과 마케팅 분야의 주요 개념인 브랜드 의존도와 같이 시장에서의 중요한 소비 행동과의 연관성을 탐구한 것이 신선한 공헌점이다. Today, consumers experience the excessive workload and work addiction. Consumers tend to spend lots of money and purchase products including self-gift to compensate for their emotional and mental loss, and fatigue from their intense workload. Despite of its commonness of consumption practice and increasing importance of the topic, it is still rare to see the study that examine how consumers’ work addiction affect consumption pattern and consumer-brand relationship. Using 181 survey participants, we empirically tested the hypotheses derived from theoretical background and literature review. The results show that work addiction of consumers is positively related to materialism of consumers, and brand dependency is also increased as materialism and work addiction of consumers are increased. This study aims to contribute to the field and theory by bringing the novel, yet, highly relevant notion of work-addiction behavior to understand consumers’ materialism and brand dependence behavior.

높은 항복전압(>1,000 V)을 가지는 Circular β-Ga₂O₃ MOSFETs의 특성

조규준,문재경,장우진,정현욱,Cho, Kyu Jun,Mun, Jae-Kyong,Chang, Woojin,Jung, Hyun-Wook 한국전기전자재료학회 2020 전기전자재료학회논문지 Vol.33 No.1

In this study, MOSFETs fabricated on Si-doped, MBE-grown β-Ga₂O₃ are demonstrated. A Si-doped Ga₂O₃ epitaxial layer was grown on a Fe-doped, semi-insulating 1.5 cm × 1 cm Ga₂O₃ substrate using molecular beam epitaxy (MBE). The fabricated devices are circular type MOSFETs with a gate length of 3 ㎛, a source-drain spacing of 20 ㎛, and a gate width of 523 ㎛. The device exhibited a good pinch-off characteristic, a high on-off drain current ratio of approximately 2.7×10⁹, and a high breakdown voltage of 1,080 V, which demonstrates the potential of Ga₂O₃ for power device applications including electric vehicles, railways, and renewable energy.

고전압 β-산화갈륨(β-Ga₂O₃) 전력 MOSFETs

문재경,조규준,장우진,이형석,배성범,김정진,성호근,Mun, Jae-Kyoung,Cho, Kyujun,Chang, Woojin,Lee, Hyungseok,Bae, Sungbum,Kim, Jeongjin,Sung, Hokun 한국전기전자재료학회 2019 전기전자재료학회논문지 Vol.32 No.3

This report constitutes the first demonstration in Korea of single-crystal lateral gallium oxide ($Ga_2O_3$) as a metal-oxide-semiconductor field-effect-transistor (MOSFET), with a breakdown voltage in excess of 480 V. A Si-doped channel layer was grown on a Fe-doped semi-insulating ${\beta}-Ga_2O_3$ (010) substrate by molecular beam epitaxy. The single-crystal substrate was grown by the edge-defined film-fed growth method and wafered to a size of $10{\times}15mm^2$. Although we fabricated several types of power devices using the same process, we only report the characterization of a finger-type MOSFET with a gate length ($L_g$) of $2{\mu}m$ and a gate-drain spacing ($L_{gd}$) of $5{\mu}m$. The MOSFET showed a favorable drain current modulation according to the gate voltage swing. A complete drain current pinch-off feature was also obtained for $V_{gs}<-6V$, and the three-terminal off-state breakdown voltage was over 482 V in a $L_{gd}=5{\mu}m$ device measured in Fluorinert ambient at $V_{gs}=-10V$. A low drain leakage current of 4.7 nA at the off-state led to a high on/off drain current ratio of approximately $5.3{\times}10^5$. These device characteristics indicate the promising potential of $Ga_2O_3$-based electrical devices for next-generation high-power device applications, such as electrical autonomous vehicles, railroads, photovoltaics, renewable energy, and industry.

고방열 기판/박막을 사용한 질화갈륨 기반 고 전자이동도 트랜지스터의 성능 향상

장성재(Sung-Jae Chang),조규준(Kyu Jun Cho),정현욱(Hyun-Wook Jung),배성범(Sung-Bum Bae),최일규(Ilgyu Choi),김해천(Haecheon Kim),안호균(Ho-Kyun Ahn),임종원(Jong-Won Lim) 대한전자공학회 2021 대한전자공학회 학술대회 Vol.2021 No.6

Guard Ring 구조에 따른 β-산화갈륨(β-Ga₂O₃) 전력 SBDs의 전기적 특성 비교

이훈기 ( Hoon-ki Lee ),조규준 ( Kyujun Cho ),장우진 ( Woojin Chang ),문재경 ( Jae-kyoung Mun ) 한국전기전자재료학회 2024 전기전자재료학회논문지 Vol.37 No.2

This reports the electrical properties of single-crystal β-gallium oxide (β-Ga₂O₃) vertical Schottky barrier diodes (SBDs) with a different guard ring structure. The vertical Schottky barrier diodes (V-SBDs) were fabricated with two types guard ring structures, one is with metal deposited on the Al₂O₃ passivation layer (film guard ring: FGR) and the other is with vias formed in the Al₂O₃ passivation layer to allow the metal to contact the Ga₂O₃ surface (metal guard ring: MGR). The forward current values of FGR and MGR V-SBD are 955 mA and 666 mA at 9 V, respectively, and the specific on-resistance (Ron,sp) is 5.9 mΩ·cm² and 29 mΩ·cm². The series resistance (Rs) in the nonlinear section extracted using Cheung’s formula was 6 Ω, 4.8 Ω for FGR V-SBD, 10.7 Ω, 6.7 Ω for MGR V-SBD, respectively, and the breakdown voltage was 528 V for FGR V-SBD and 358 V for MGR V-SBD. Degradation of electrical characteristics of the MGR V-SBD can be attributed to the increased reverse leakage current caused by the guard ring structure, and it is expected that the electrical performance can be improved by preventing premature leakage current when an appropriate reverse voltage is applied to the guard ring area. On the other hand, FGR V-SBD shows overall better electrical properties than MGR V-SBD because Al₂O₃ was widely deposited on the Ga₂O₃ surface, which prevent leakage current on the Ga₂O₃ surface.

감정노동자의 자살생각 영향요인에 관한 연구

송민수(Minsu Song),조규준(Kyujun Cho),양경욱(Kyunguk Yang),방효훈(Hyohoon Bang) 충남대학교 사회과학연구소 2023 사회과학연구 Vol.34 No.3

Despite the introduction of the emotional worker protection system and accumulated related studies, difficulties in the field remain persistent. This study identifies the effects of workplace-related factors and worker resource-recovery experiences on suicidal ideation among emotional workers at national medical centers, fire departments, public agencies for social services, and youth work agencies in Chungcheongnam-do. Logistic regression analysis revealed that the number of responses to malicious/strong complaints (+), bullying from superiors or colleagues (+), discrimination (+), organizational safety culture (-), sleep-related problems (+), and health-promoting lifestyles (-) had a significant effect on the possibility of suicidal ideation. This study has academic significance for expanding the scope of emotional labor research and provides various practical implications for institutional improvement by considering one more mental health-related indicator, viz., suicidal ideation among emotional workers.

GaN MMIC를 위한 후면 비어의 RF 모델링

이상흥(Sang-Heung Lee),조규준(Kyu Jun Cho),민병규(Byoung-Gue Min),김성일(Seong-Il Kim),강동민(Dong-Min Kang),이종민(Jong-Min Lee),장우진(Woojin Chang),지홍구(Hong Gu Ji),임종원(Jong-Won Lim),이기준(Ki Jun Lee) 한국통신학회 2018 한국통신학회 학술대회논문집 Vol.2018 No.1

5G 이동통신을 위한 GaN RF 전자소자 및 집적회로 기술 동향

이종민,민병규,장우진,지홍구,조규준,강동민,Lee, J.M.,Min, B.G.,Chang, W.J.,Ji, H.G.,Cho, K.J.,Kang, D.M. 한국전자통신연구원 2021 전자통신동향분석 Vol.36 No.3

As the 5G service market is expected to grow rapidly, the development of high-power, high-efficiency power amplifiers for the 5G communication infrastructure is indispensable. Gallium nitride (GaN) is attracting great interest as a key device in power devices and integrated circuits due to its wide bandgap, high carrier concentration, high electron mobility, and high-power saturation characteristics. In this study, we investigate the technology trends of Ka-band GaN radio frequency (RF) power devices and integrated circuits for operation in the millimeter-wave band of recent 5G mobile communication services. We review the characteristics of GaN RF high electron mobility transistor (HEMT) devices to implement power amplifiers operating at frequencies around 28 GHz and compare the technology of foreign companies with the device characteristics currently developed by the Electronics and Telecommunication Research Institute (ETRI). In addition, the characteristics of Ka-band GaN monolithic microwave integrated circuit (MMIC) power amplifiers manufactured using various GaN HEMT device technologies are reviewed by comparing characteristics such as frequency band, output power, and output power density of integrated circuits. In addition, by comparing the performance of the power amplifier developed by ETRI, the current status and future direction of domestic GaN power devices and integrated circuit technology will be discussed.