사실적시 명예훼손죄에 관한 논의

장호정,강수경,조영승 충남대학교 법학연구소 2024 法學硏究 Vol.35 No.2

종종 사실을 말하는 것이 왜 범죄가 되어야 하는가에 대한 의문이 제기된다. 그런 연유로 2000년대 초반부터 현재에 이르기까지 학계에서는 사실적시 명예훼손죄의 비범죄화에 관한 논의가 진행되고 있으며, 실무에서는 대법원이 형법 제307조 제1항의 적용을 전제로 규정된 형법 제310 조의 위법성조각사유를 폭넓게 해석하여 확장적용하는 경향을 보여주고있다. 하지만 근본적으로 명예훼손죄를 추상적 위험범으로 파악하여 실질적으로 명예훼손이 발생하는가를 검토하지 않고 있으며, 특히 형법상명예훼손죄 규정들의 공연성을 대법원이 ‘전파가능성 이론’으로 해석하면서 법적용에 있어서 문제점을 낳고 있다. 이러한 문제의식에 기반하여사실적시 명예훼손죄의 폐지론 역시 등장하고 있다. 2021년 2월 헌법재판소는 사실적시 명예훼손을 규정한 형법 제307조제1항의 위헌확인에 대한 헌법소원 사건에서 재판관 5:4의 의견으로 해당규정이 헌법에 위반되지 않음을 확인하였다. 이는 결국 헌법에서 보장하고 있는 표현의 자유와 개인의 명예권, 즉 인격권이 서로 충돌하는 상황에서 과연 어느 쪽의 손을 드는 것이 타당한 것인지에 관한 논의라고 할수 있다. 다수의견은 형법 제307조 제1항이 사실적시를 통해 표현의 자유를 제한하고 있지만, 타인의 명예를 그 보호법익으로 하며 징벌적 손해배상이 인정되지 않는 현실에서 민사적인 구제 수단만을 통해서는 동일한입법목적을 달성하기 어렵다고 보았지만, 헌법적 관점에서 여전히 논의의 여지를 남기고 있다. 이 글은 형사법적 관점, 비교법적 관점, 헌법적 관점에서 사실적시 명예훼손죄를 둘러싼 논의를 검토하고 있다 The ‘crime of defamation by stating the facts’ has remained an effective penalty provision ever since it was enacted in 1953. It has been defined as a crime for a long time and was taken for granted, but since the early 2000s, social interest in the crime of defamation by stating the facts has increased, and around 2020, the theory of interpretation of existing laws and regulations has been expanded, and the theory of the existence of the crime of defamation by stating the facts, Discussions on the pros and cons are mainstream, and in particular, more research has been conducted following the Constitutional Court’s decision on constitutionality in February 2021. As of January 2024, the 21st National Assembly has proposed related criminal law amendments seven times, but they are still pending submission to the relevant committee. Recently, on January 4, 2024, the Supreme Court confirmed the conviction of ‘Bad Fathers’ for making defamatory statements by disclosing the personal information of ‘bad parents’ who do not pay child support, and a constitutional petition was filed again. From a neutral standpoint, this article was designed to briefly add the author’s opinion in order to explore whether it would be possible to distinguish and regulate legal interests that the community can pursue and those that cannot be pursued through the criminal law’s ‘crime of defamation when facts are stated’. To this end, we are examining discussions surrounding the ‘crime of defamation based on facts’ by comprehensively examining legislative precedents, current legal regulations, systems and interpretations, and decisions of the Constitutional Court. However, as a result, we could not help but confirm the systemic problems with the current criminal law provisions, the curtailing effect on freedom of expression, and the absence of careful argument by the Constitutional Court

스크린 인쇄법과 졸겔법에 의해 제작된 (Pb,La)TiO_3 강유전체막의 특성 연구

장호정,김민영,서광종,장지근 단국대학교 신소재기술연구소 1998 신소재 Vol.8 No.-

Pt/SiO_2/Si 기판구조위에 스크린인쇄법과 졸-겔법에 의해 as-coated (Pb, La)TiO_3(PLT), 후막과 형성하고 650℃ 후속열처리 온도에서 결정화한후 결정특성과 전기적 특성을 조사하였다. 650℃ 온도에서 후속열처리된 PLT시료의 경우 전형적인 perovskite 결정구조를 보여주었다. 후속 열처리된 PLT 후막과 박막의 두께는 약 3.5㎛와 0.8㎛로 각각 나타났으며 Pt 전극과 PLT막 사이에는 비교적 평활한 계면형상을 보여주었다. PLT 후막과 박막시료의 1 kHz 주파수에서 유전상수는 660과 190의 값을 나타내었으며 잔류분극(2Pr) 값은 약 1μC/㎠과 7μC/㎠을 각각 나타내었다. 후막 PLT 시료에 의해 박막시료에서 잔류분극값의 증가는 박막시료가 보다 양호한 결정성을 가지고 있기 때문으로 사료된다. 누설전류의 크기는 약 0.3∼0.8 μA/㎠의 값을 나타내어 비교적 양호한 누설전류 특성을 얻었다. The as-coated (Pb,La)TiO_3(PLT) thick and thin films were prepared on Pt/SiO_2/Si substrates by the screen printing and the sol-gel methods. The post-annealing was carried out at 650℃ for the crystallization. The crystal structures and electrical properties were investigated. The PLT films annealed at 650℃ showed the typical perovskite crystal structures. The thickness of PLT thick and thin films were about 3.5 ㎛ and 0.8 ㎛ respectively, showing relatively smooth cross-sectional surface between Pt electrode and PLT film. The PLT thick and thin films annealed at 650℃ indicated about 660 and 190 for the dielectric constant and 1 μC/㎠ for the remanent polarization(2Pr), respectively. The higher Pr value in the thin film sample compared to the thick film may attributed to the good crystal structure of the thin film. The leakage currents were about 0.3-0.8μA/㎠.

스크린 인쇄법에 의한 (Pb,La)TiO_3 강유전체 후막의 전기적 특성

장호정,김민영 단국대학교 1999 論文集 Vol.34 No.-

(Pb,La)TiO_3(PLT) thick films were prepared on the Pt/SiO_2/Si substrates by the screen printing method. Crystalline and electrical properties were investigated according to the post-annealing temperature. The PLT thick films annealed at the temperatures above 650℃ for 1 hour showed the typical perovskite crystal phases. The FWHM(full width at half maximum) value was decreased with increasing the post-annealing temperature from 600℃ to 700℃ suggesting the improved crystallinity. The dielectric constant and tangent loss of the PLT thick film annealed at 650℃ were about 750 and 0.009. repectively. The remanent polarization(2Pr, Pr+-Pr-) and the pyroelectric coefficient of the PLT film annealed at 700℃ were about 1μC/㎠ and 1.5 nC/㎠·℃ at 30℃. The leakage current was 0.3㎂/㎠ at 5V bias.

Fe - B - Si 비정질합금 Ribbon 의 제조조건에 대하여

장호정,송진태 대한금속재료학회 1985 대한금속재료학회 학술대회 개요집 Vol.1985 No.1

분자선 Epitaxy법에 의해 MgO(100) 및 MgO/Si(111) 기판위에 증착된 YBa_2Cu_3O_7-x 박막의 초전도 및 결정특성(Ⅰ)

장호정,김병철 단국대학교 신소재기술연구소 1993 신소재 Vol.3 No.-

분자선 Epitaxy법에 의해 MgO(100) 및 MgO/Si(111) 기판위에 기판온도 590℃, chamber압력 9.5×10^-5 Torr의 증착조건에서 YBA_2Cu_3O_7-x (YBCO)박막을 제작하여 초전도 및 결정특성을 조사하였다. MgO(100) 단결정 기판위에 증착된 YBCO박막은 초전도 전이온도 Tc_zero 86K의 표면이 거칠은 단결정 박막을 재현성있게 얻을 수 있었다. 또한 MgO/Si(111)기판위에 증착된 박막시료의 경우 Tc_zero 75K의 다결정의 결정특성을 나타내었다. XRD분석결과 양쪽시료 모두 기판위에 수직한 c축 배향구조를 나타내었고, rocking curve의 FWHM(Full width at half maximum) 값은 MgO(100)기판위에 증착된 박막이 0.65°로써 더 작은 값을 나타내어 c축 배향성이 개선되었음을 알 수 있었다. SEM에 의해 표면조직을 관찰한 결과 박막표면에 과성장 핵(outgrowth nuclei)이 관찰되었으며, 이는 증착중 a, b축과 c축의 결정성장 속도의 차이에 기인하는 것으로 사려 되었다. MgO(100) 기판위에 증착된 Tc_zero 83K의 YBCO박막시료의 임계전류밀도(Jc)값은 온도 4.2K 1 Tesla 자장하에서 5.1×10^6A/㎠이었다. The YBa_2Cu_3O_u-x(YNCO) thin films were grown on MgO(100) and MgO/Si(111) substrate at the substrate temperature of 590℃ and the chamber pressure of 9.5×10^-5 Torr by a molecular beam epitaxy method. The superconductivity and crystalline quality were investigated. The YBCO film on MgO(10)substrate showed Tc zero 86K with single crystal phase in RHEED observation. Whereas, the YBCO film deposited on the MgO/Si(111) substrate was Tc zero 75K with polycrystalline nature under the same deposition condition. The X-ray diffraction (XRD) analysis for the both samples showed preferentially c-axis oriented superconducting phases perpendicular to the film surface. The FWHM (Full Width at Half Maximum) of (005) rocking curve for the YBCO film on MgO(100) substrate was 0.65° and was increased to 1.72° when the YBCO film was deposited on MgO/Si(111) substrate. This large value of FWHM means that the degree of preferred orientation was lowered. The critical current density (Jc) for the films deposited on MgO(100) substrate was found to be 5.1×10^6 A/㎠ at 4.2K and 1 Tesla in applied magnetic field.

프린팅 히터용 코발트실리사이드 박막의 형성과 특성연구

장호정,노영규 한국마이크로전자및패키징학회 2002 마이크로전자 및 패키징학회지 Vol.9 No.2

낙법(烙法)에 관한 중의(中醫) 논문 고찰

장호정,이현주,서형식,Jang, Ho-Jeong,Lee, Hyeon-Joo,Seo, Hyung-Sik 대한한방안이비인후피부과학회 2018 한방안이비인후피부과학회지 Vol.31 No.3

Objectives : The purpose of this study is to review the chinese published papers on cauterization of traditional chinese medicine. Methods : We searched chinese published papers from 1958 until May 2017 via CNKI(China National Knowledge Infrastructure) with the keyword "cauterization". We analyzed the studies covered cauterization medical treatment, and classified them by 5 categories including periods, type of study, treatment site, experiment target site, and cauterizing method. Results : We reviewed 112 chinese papers which include 10 Original articles, 43 Review articles, and 59 Case reports. Examining yearly distributions, we can see that research on cauterization is becoming more active than in the past. In classification of 93 clinical studies by treatment site, the number of research on Tonsillitis accounts for almost half(43 studies), followed by Sore throat(14 studies). Among 10 experimental studies, Eye is the most frequently targeted organ which was used to study high intra-ocular pressure(5 studies), and retinal ganglion cell(2 studies). Lastly, there are various methods of cauterization used in papers: Branding iron(54 studies), and Red-hot needle(24 studies) are two major heating methods. Conclusions : This analysis shows that studies on the application of cauterization have been actively conducted in China these days. Furthermore, up-to-date cauterizing methods have been developed such as electric type and microwave type beyond traditional ways. We expect this article will encourage further research on cauterization in order to apply it to a variety of diseases. Then, it could become one of new effective medical treatments in Korean medicine.

졸-겔 방법으로 $SiO_2/Si$ 기판 위에 제작된 (Bi,La)$Ti_3O_12$ 강유전체 박막의 특성 연구

장호정,황선환 한국마이크로전자및패키징학회 2003 마이크로전자 및 패키징학회지 Vol.10 No.2

졸-겔(Sol-Gel)법으로 $SiO_2/Si$ 기판 위에 $Bi_{3.3}La_{0.7}O_{12}$(BLT) 강유전체 박막을 스핀코팅하여 Metal-Ferroelectric-Insulator-Silicon 구조의 캐패시터 소자를 제작하였다. 열처리하지 않은 BLT 박막시료를 $650^{\circ}C$와 $700^{\circ}C$의 온도에서 열처리함으로서 임의 배향을 가지는 퍼롭스카이트 결정구조를 나타내었다. 열처리 온도를 $650^{\circ}C$에서 $700^{\circ}C$로 증가시킴에 따라서 (117) 주피크의 full width at half maximum(FWHM)값이 약 $0.65^{\circ}$에서 $0.53^{\circ}$로 감소하여 결정성이 개선되었으며 결정립 크기와 $R_rms$ 값이 증가하면서 박막표면이 거칠어지는 경향을 보여주었다. $700^{\circ}C$에서 열처리한 BLT 박막시료에 대해 인가 전압에 따른 정전용량(C-V)값을 측정한 결과 5V의 인가전압에서 메모리 원도우 값이 약 0.7V를 보여주었으며, 3V의 인가전압에서 누설전류 값이 약 $3.1{\times}10^{-8}A/cm^2$을 나타내었다. The $Bi_{3.3}La_{0.7}O_{12}$(BLT) capacitors with Metal-Ferroelectric-Insulator-Silicon structure were prepared on $SiO_2/Si$ substrates by using sol-gel method. The BLT thin films annealed at $650^{\circ}C$ and $700^{\circ}C$ showed randomly oriented perovskite crystalline structures. The full with at half maximum (FWHM) of the (117) main peak was decreased from $0.65^{\circ}$ to $0.53^{\circ}$ with increasing the annealing temperature from $650^{\circ}C$ to $700^{\circ}C$, indicating the improvement in the crystalline quality of the film. In addition, the grain size and $R_rms$ , values were increased with increasing the annealing temperatures, showing the rough film surface at higher annealing temperatures. From the capacitance-voltage (C-V) measurements, the memory window voltage of the BLT film annealed at $700^{\circ}C$ was found to be about 0.7 V at an applied voltage of 5 V. The leakage current density of the BLT film annealed at $700^{\circ}C$ was about $3.1{\times}10^{-8}A/cm^2$.

잉크젯 프린터용 발열체의 제작과 특성연구

장호정,노영규 한국마이크로전자및패키징학회 2003 마이크로전자 및 패키징학회지 Vol.10 No.3

The crystallized stable cobalt silicide$(CoSi_2)$ films were prepared on $poly-Si/SiO_2/Si$substrates for the application of inkjet printing head as a heating element with omega shape. The structural images and temperature resistance coefficient were investigated. The value of temperature resistance coefficient of the heating element was found to be about $0.0014/^{\circ}C$. The maximum power of the heating element was 2 W at the applied voltage of 2 V, 10 kHz in frequency and $1{\mu}s$ in pulse width. From the investigation of fatigue property according to the repeated applied voltages, there was no drastic changes in the resistances of heating element under the condition of $10^8$ pulsed cycles at below 15 V biased voltage. In contrast, the resistance of heating element was greatly increased at $10^6$ pulsed cycles when the heating element was operated at 17 V. 잉크젯 헤드의 발열체에 적용하기 위해 $poly-Si/SiO_2/Si$ 다층기판 위에 결정화된 안정한 코발트실리사이드$(CoSi_2)$ 박막을 형성하여 오메가 형태의 발열체를 제작하고 발열체의 구조적 형상과 온도저항계수 등 전기적 특성을 조사, 연구하였다 $(CoSi_2)$ 박막의 형성은 금속 Co 박막을 급속 열처리장치를 이용하여 $800^{\circ}C$에서 20초 동안 질소 분위기에서 열처리하여 실리사이드 박막을 형성하였다. 발열체의 온도 저항계수 값은 약 $0.0014/^{\circ}C$ 값을 얻을 수 있었다. 인가전압 10 V, 주파수 10KHz 및 펄스간격 $1{\mu}s$ 인가시 발열체의 순간전력은 최대 2W를 나타내었다. 반복된 전압인가에 따른 발열체의 피로특성을 조사한 결과 15 V 이하의 전압인가시 $10^8$ 펄스 cycle 까지 저항변화가 거의 없었으나 17 V 인가전압에서는 $10^6$ cycle에서 발열체의 저항이 급격히 증가하였다.

비휘발성 메모리용 SrBi$_{2}$Ta$_{2}$ $O_{9}$강유전체 박막의 제조 및 특성연구

장호정,서광종,장기근 대한전자공학회 1998 電子工學會論文誌, D Vol.d35 No.3

SrBi$_{2}$Ta$_{2}$O$_{9}$ (SBT) ferroelectric thin films for nonvolatile memory were prepared on Pt/Ti/SiO$_{2}$/Si and RuO$_{2}$/SiO$_{2}$/Si substrates by RF magnetron sputtering. The dependences of crystalline and electrical properties on the lower electrode type(Pt and RuO$_{2}$) and the annealing temperatures were investigated. SBT films regardless of their electrode types showed typeical Bi layered peroviskite crystal structures. The crystalline quality of as-deposited SBT films was improved by the rapid thermal annealing at 650.deg. C for 30 sec. The remanetn polarization of 2Pr (Pr+-Pr-) of the annealed SBT films deposited on Pt/Ti/SiO$_{2}$/Si substrates were about 11 .mu.C/cm$^{2}$ and 3 .mu.C/cm$^{2}$, respectively. The leakage currents at 3 V bias voltage were about 0.8 .mu.A/cm$^{2}$ for SBT/ Pt/Ti/SiO$_{2}$/Si and about 1 .mu.A/cm$^{2}$ for SBT/RuO$_{2}$/SiO$_{2}$/Si sample. SBT films annealed at 650 .deg. C showed no degradation in Pr values after 10$^{11}$ polarization switching cycles, indicating good fatigue properties. In addition, for SBT samples deposited on Pt/Ti/SiO$_{2}$/Si, Pr values increased to more than that of initial state, suggesting the increament of leakage current caused by repeated polarization.