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고온 동작용 SiC CMOS 소자/공정 및 집적회로 기술동향
원종일,정동윤,조두형,장현규,박건식,김상기,박종문,Won, J.I.,Jung, D.Y.,Cho, D.H.,Jang, H.G.,Park, K.S.,Kim, S.G.,Park, J.M. 한국전자통신연구원 2018 전자통신동향분석 Vol.33 No.6
Several industrial applications such as space exploration, aerospace, automotive, the downhole oil and gas industry, and geothermal power plants require specific electronic systems under extremely high temperatures. For the majority of such applications, silicon-based technologies (bulk silicon, silicon-on-insulator) are limited by their maximum operating temperature. Silicon carbide (SiC) has been recognized as one of the prime candidates for providing the desired semiconductor in extremely high-temperature applications. In addition, it has become particularly interesting owing to a Si-compatible process technology for dedicated devices and integrated circuits. This paper briefly introduces a variety of SiC-based integrated circuits for use under extremely high temperatures and covers the technology trend of SiC CMOS devices and processes including the useful implementation of SiC ICs.
신동우(D. W. Shin),정동성(D. S. Jeong),장현규(H. K. Jang) 한국소성가공학회 2014 한국소성가공학회 학술대회 논문집 Vol.2014 No.10
Glass-Wool reinforced polymeric composites provide the desirable properties of high stiffness and strength as well as specific weight, hence, they have become some of the most important materials in several industries, most notably the automotive and aerospace industries. As a result, the study of the material behavior and forming techniques of such composites has attracted considerable attention in recent years. Even though many studies have been done on the stretch forming of metallic materials, very few have focused on the thermoplastic composites. One of the characteristics of stretch forming is that sheet material is prevented from wrinkling. This is especially important for long glass fiber reinforced composites because of their inherent tendency to buckle in compressive deformation. It is therefore very important to investigate the formability of this composite in biaxial stretch deformation. The objectives of this research have been to investigate the formability of thermoplastic composite sheet in biaxial stretch forming. Limiting strain in biaxial stretch forming were explored using the Deep Drawing test. Marciniak"s imperfection theory is used to predict the instability in biaxial stretching of composites.
HWE(Hot Wall Epitaxy)에 의한 ZnIn_2S_4 박막 성장과 광전도 특성
홍광준,이관교,정준우,정경아,방진주,장현규,문종대,김혜숙 조선대학교 기초과학연구소 1999 自然科學硏究 Vol.22 No.1
HWE 방법에 의해 ZnIn_2S_4 박막을 Si(00) 기판 위에 성장시켰다. 증발원과 기판의 온도를 각각 610℃, 450℃로 하여 성장시킨 ZnIn_2S_4 박막의 이중 결정 X-선 요동곡선(DCRC)의 반폭치(FWHM)값이 245 arcsec로 가장 작았다. Van der Pauw 방법으로 Hall 효과를 측정하여 운반자농도의 1n n 대 1/T에서 구한 활성화에너지는 0.17eV로 측정되었다. Hall 이동도의 온도 의존성은 30K에서 100K까지는 불순물산란에 기인하고, 100K에서 293K까지는 격자산란에 기인한것으로 고찰되었다. 광전도셀의 특성으로 spectral response, 최대 허용소비전력(MAPD), 광전류와 암전류(pc/dc)의 비 및 응답시간을 측정하였다. S 증기분위기에서 열처리한 광전도 셀의 경우, 감도(??)는 0.99, pc/dc은 1.37x10^7, 그리고 최대 허용소비전력(MAPD)은 336mW, 오름시간(rise time)은 9ms, 내림시간(decay time)은 9.8ms로 가장 좋은 광전도 특성을 얻었다. The ZnIn_2S_4 thin films were grown on the Si(100) wafers by a hot wall epitaxy method(HWE). The source and substrate temperature are 610℃ and 450℃ respectively. The crystalline structure of epilayers was investigated by double crystal X-ray diffraction(DCXD). Hall effect on the sample was measured by the van der Pauw method and studied on the carrier density and mobility dependence on temperature. From Hall data, the mobility was increased in the temperature range 30K to 100K by impurity scattering and decreased in the temperature range 100K to 293K by the lattice scattering. In order to explore the applicability as a photoconductive cell, we measured the sensitivity(??), the ratio of photocurrent to darkcurrent(pc/dc), maximum allowable power dissipation(MAPD), spectral response and response time. The results indicated that the photoconductive characteristic were the best for the samples annealed in S vapor compare with in Zn, In, air and vacuum vapour. Then we obtained the sensitivity of 0.99, the value of pc/dc of 1.37x10^7, the MAPD of 336mW, and the rise and decay time of 9ms and 9.8ms, respectively.
이민호,박경남,기춘석,노임환,장현규,배상철,이동후 대한소화기내시경학회 1986 Clinical Endoscopy Vol.6 No.1
A case of malignant lymphoma of the transverse colon with situs inversus totalis is presented. A 52 year-old male was admitted to this hospital with a 4-months history of right upper quadrant pain and palpable mass. This patient was performed herniorrhaphy due to right inguinal hernia at 4 months ago, and then, was diagnosed situs inversus totalis. (continue...)