http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
RF magnetron sputtering 법에 의한 ZnO 막의 제작 및 특성
이경하,김영진,권성렬,김기완 경북대학교 센서기술연구소 1994 센서技術學術大會論文集 Vol.5 No.1
The excellent c-axis crystal oriented ZnO films were prepared by high deposition rate RF magnetron sputtering method onto glass substrates. The properties of ZnO films were investigated under the different substrate temperature(room temp. ~ 400 ℃). The optimum fabrication condition of ZnO films were such that RF power, substrate temperature, and gas pressure of mixture Ar(50%):O_(2)(50%) were 200 W, 400 ℃, and 5 mTorr respectively. On these conditions, the ZnO film showed the deposition rate of about 320 Å/min, the resistivity of 10^(5) Ω·cm, and the optical transmmitance in 400 nm ~ 800nm of more than 90%. When the substrate temperature was increased to about 400 ℃, the notable change in c-axis orientation and surface smoothness was obserbed. From these result, ZnO films can be applied piezoelectric material of acoustic or sensor devices.
대기압 화학기상증착법으로 저온에서 증착된 비정질 실리콘의 전기적 및 광학적인 특성연구와 박막트랜지스터의 제작
이경하,문병연,유재호,이승민,장진 慶熙大學校 大學院 1994 高凰論集 Vol.15 No.-
We have studied the effect of ion doping and deposition temperature on the eletrical and optical properties for AP (Atmospheric Pressure) CVD (chemical vapor deposition) amorphous silicon (a-Si) films. The a-Si films with thickness of ∼2500Å were hydrogenated with RF hydrogen plasma just after the deposition at 350℃∼500℃. The conductivity activation energy and the optical band gap of the a Si films are increased by lowering substrate temperature, resulted from the increase in hydrogen content in a-Si. The optical band gap and the conductivity activation energy of a-Si film deposited at 380℃ are 1.67eV and 0.85eV, respectively. This film exhibited photo-sensitivity of 10_5, Urbach energy of 53meV, and defect density of 5×10_15 cm_3. The degradation factor γ for the film deposited at 380℃ is 0.05. The P ion doped layer using this film exhibited the room temperature conductivity of 4. 6×10_3 S/cm and conductivity activation energy of 0.11eV. We have fabricated the APCVD a-Si TFT with field effect mobility of 1.25 ㎠/Vs, threshold voltage of 9V using a-Si film deposited at 380℃.