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성장 온도에 따른 Cu(In,Ga)Se₂광흡수층의 물리적 특성 및 깊이 조성 분석
안균,정용민,강윤희,Pham Cong De,조채용,안형수,이삼녕 한국물리학회 2011 새물리 Vol.61 No.5
This paper presents the results obtained from glow discharge optical emission spectrometry (GD-OES) depth profiling of Cu(In,Ga)Se₂(CIGS) thin films prepared at various substrate temperatures. The CIGS thin films were grown on molybdenum-coated soda-lime glass substrats by using a three-stage process with a co-evaporator system. For the substrate temperature T_(sub) of the second stage. the CIGS thin films showed a (220)/(204)-preferred orientation at temperatures below 450℃ and a (112)-preferred orientation at temperatures above 500℃. The grain size of the CIGS films increased with increasing T_(sub). The GD-OES depth profiling of the CIGS thin films prepared at various T_(sub)'s showed uniform distributions of all the elements through the CIGS film. These results were compared with the SIMS depth profiles for the CIGS thin films. A solar cell using a CIGS absorber layer prepared at the optimized T_(sub) showed a conversion efficiency of about 8%. 본 연구는 다양한 성장 온도에 따라 증착된 Cu(In,Ga)Se₂(이하,CIGS) 박막의 특성과 글로우방전분광기(GD-OES; glow discharge optical emission spectrometry)를 이용하여 박막의 깊이에 따른 원소분포 분석결과를 조사하였다. CIGS 박막은 동시증발장비를 이용하여 3단계공정으로 Mo/유리 기판 위에 증착되었다. 2단계 과정에서, 성장기판온도에 따른 CIGS 박막의 결정성은 450℃이하에서는(220)/(204) 방향으로, 500℃ 이상에서는 (112) 방향으로 우선성장하였다. 또한, 성장 기판 온도가 증가함에 따라 CIGS 박막의 결정립크기는 증가하였다. 수십 ㎛의 깊이, 짧은 시간, 극미량원소분석이가능한 GD-OES를 CIGS 박막분석에 활용하고자 하였으며, 기존 미량분석에사용되는 이차이온질량분광기(SIMS) 깊이 조성 분석 결과와 비교하였다. GD-OES를 이용하여 CIGS 박막의 깊이 조성을 조사한 결과, Cu, In, Ga 및Se 원소가 균일하게 분포하고 있음을 확인하였다. 1단계 450℃와2단계 550℃의 성장온도에서 증착된 CIGS 박막으로 제조된태양전지는 약 8.12%의 에너지 변환 효율을 보였다.
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Physical Properties of Epitaxial Zn1–xCuxO Films Fabricated by Using Pulsed Laser Deposition
안균,Fukai Shan,김종만,정세영,조채룡,김종필,진종성,김현규 한국물리학회 2012 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.60 No.9
Cu-doped ZnO (CZO) thin films (0–3 mol% Cu content) were grown on GaN/Al2O3 substrates at 700 °C by using the pulsed laser deposition technique. The XRD results confirmed that the CZO films grew epitaxially and that a few Cu related phases were involved in their growth. The intensity of the green emission peak observed in the photoluminescence (PL) spectra initially increased up to a Cu doping content of 1 mol% but decreased significantly at higher values of the doping content. The saturation magnetization of the CZO film with a Cu content of 0.8 mol% at room temperature was 1.28 emu/cc.
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Enhancement of adhesion between polyphenylene sulfide and copper by surface treatments
김지윤,안균,정세영,정의덕,진종성,배종성,김현규,조채용 한국물리학회 2014 Current Applied Physics Vol.14 No.1
In this paper, we introduce methods which can effectively enhance the adhesion between polyphenylene sulfide (PPS) and bulk Cu. One of the methods involved the thermal evaporation of PPS to form a buffer layer on Cu and the other involved plasma treatment with reactive gases such as O2, H2, and N2 on the PPS buffer layer. The adhesion strength of samples prepared by PPS thin film coating (w26 MPa) was largely enhanced when compared to that of samples obtained by only etching (w15 MPa). Among the samples obtained by plasma treatment using various reactive gases, the samples treated using H2 plasma showed the best adhesion strength (of w32 MPa) in comparison to the other samples owing to the adhesion between hydrophobic surfaces.
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Effect of Reactive Gases in an Atmospheric-pressure Plasma for Dye Adsorption on ZnO Nanorods
De Pham-Cong,안균,김종만,정세영,조채용,김종필,김현규,안형수,김홍승 한국물리학회 2012 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.60 No.7
In this study, ZnO nanorods (NRs) were grown on F-doped SnO2 (FTO)/glass substrate by using a chemical bath deposition (CBD) method. The NRs were crystallized well. The surfaces of the NRs were modified using an atmospheric-pressure (AP) plasma containing reactive gases such as O2, H2, and N2. In the case of the Ar/O2 and Ar/N2 plasma-treated ZnO NRs, chemical bonding states and the dye adsorption on the surface of the ZnO layer increased because of -O and -OH radicals. We present the efficiencies of ZnO-NR-based dye-sensitized solar cells (DSSCs) treated with AP plasmas containing reactive gases.
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Ji-Hye Lee,안균,김수형,김종만,정세영,진종성,정의덕,조채용 한국물리학회 2014 Current Applied Physics Vol.14 No.6
TiO2 nanofibers (NFs) were fabricated by an electrospinning process and were used as scattering layers in dye-sensitized solar cells (DSSCs). The NF-coated photoanodes of the DSSCs were prepared with a variety of scattering layer thicknesses. The thickness effect of the scattering layer on the double-layered TiO2 nanoparticle (NP)/TiO2 NF structure was investigated through structural, morphological, and optical measurements. In the double-layered photoanode, the TiO2 NP layer plays a major role in dye adsorption and light transmission, and the TiO2 NF scattering layer improves the absorption of visible light due to the light scattering effects. The scattering effect of TiO2 NFs layer was examined by the incident monochromatic photon-to-electron conversion efficiency (IPCE) and UVeVis spectrometry. The conversion efficiency for the 12 mm-thick photoanode composed of a 2 mm-thick TiO2 NF layer and 10 mmthick TiO2 NP layer was higher than that of DSSCs with only TiO2 NPs photoanode by approximately 33%.
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나노니들 구조 위에 형성된 GaN 에피층의 결정학적 특성
최윤정,장지호,이삼녕,최석철,이상걸,신민정,조채용,전헌수,안형수,안균 한국물리학회 2010 새물리 Vol.60 No.9
A GaN nanoneedle buffer layer was grown at a growth temperature of 600℃ under a HCl : NH3 gas flow ratio of 1 : 50 for 30 min. In addition, GaN epilayers were grown on nanoneedle buffer layers at 1050℃ for 1, 3, 5 and 30 min, respectively, observe the initial growth mechanism of the epilayer. The morphological properties of the GaN epilayers were analyzed using field-emission scanning electron microscopy, and the crystal structures were examined using X-ray diffraction. We confirmed that the epilayer was vertically well aligned with the (0002) plane. The pole figure measurements showed that the c-axis crystallographic orientation increased with time for growth times below 30 min and then decreased slightly. HVPE(hydride vapor phase epitaxy) 장치를 이용하여 GaN 나노니들(nanoneedle)을 HCl : NH₃유량비 1 : 50과 600℃ 온도 조건에서 30분간 성장한 후 다시 그 위에 1050℃에서 1,3,5,30분 동안 GaN 에피층을 성장시켰다. 그리고 이때 나노니들 구조의 air gap을 채우며 2차원 에피로 발전해 가는 과정에 대한 결정학적 특성을 살펴보았다. 전계 방출 주사전자현미경(field emission scanning electron microscopy ; FE-SEM)을 이용하여 표면을 관찰하였으며, 고분해능 X-선 회절(high resolution X-ray diffraction ; HR-XRD)을 이용하여 구조적 특성을 분석하였다. FE-SEM 형상에서는 쵝에는 수직 방향의 성장을, 30분 성장에서는 측면 방향의 병합성장을 볼 수 있었고, HR-XRD에 의한 2θ/ω 스캔결과에서는 c축 방향의 배향성을 확인하였고, 극점도(pole figure) 분석으로부터 (1011)면은 특정한 방위에 대한 의존성 없이 무질서하게 분포하고 있음을 알 수 있었다.
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