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Li, Meng,Shin, Hong-Sik,Jeong, Kwang-Seok,Oh, Sung-Kwen,Lee, Horyeong,Han, Kyumin,Lee, Ga-Won,Lee, Hi-Deok The Institute of Electronics and Information Engin 2014 Journal of semiconductor technology and science Vol.14 No.1
Different kinds of post-deposition annealing (PDA) by a rapid thermal process (RTP) are used to enhance the field-effect passivation of $Al_2O_3$ film in crystal Si solar cells. To characterize the effects of PDA on $Al_2O_3$ and the interface, metal-insulator semiconductor (MIS) devices were fabricated. The effects of PDA were characterized as functions of RTP temperature from $400{\sim}700^{\circ}C$ and RTP time from 30~120 s. A high temperature PDA can retard the passivation of thin $Al_2O_3$ film in c-Si solar cells. PDA by RTP at $400^{\circ}C$ results in better passivation than a PDA at $400^{\circ}C$ in forming gas ($H_2$ 4% in $N_2$) for 30 minutes. A high thermal budget causes blistering on $Al_2O_3$ film, which degrades its thermal stability and effective lifetime. It is related to the film structure, deposition temperature, thickness of the film, and annealing temperature. RTP shows the possibility of being applied to the PDA of $Al_2O_3$ film. Optimal PDA conditions should be studied for specific $Al_2O_3$ films, considering blistering.
Meng Li,Hong-Sik Shin,Kwang-Seok Jeong,Sung-Kwen Oh,Horyeong Lee,Kyumin Han,Ga-Won Lee,Hi-Deok Lee 대한전자공학회 2014 Journal of semiconductor technology and science Vol.14 No.1
Different kinds of post-deposition annealing (PDA) by a rapid thermal process (RTP) are used to enhance the field-effect passivation of Al2O3 film in crystal Si solar cells. To characterize the effects of PDA on Al2O3 and the interface, metalinsulator semiconductor (MIS) devices were fabricated. The effects of PDA were characterized as functions of RTP temperature from 400~700 °C and RTP time from 30~120 s. A high temperature PDA can retard the passivation of thin Al2O3 film in c-Si solar cells. PDA by RTP at 400 °C results in better passivation than a PDA at 400 °C in forming gas (H2 4% in N2) for 30 minutes. A high thermal budget causes blistering on Al2O3 film, which degrades its thermal stability and effective lifetime. It is related to the film structure, deposition temperature, thickness of the film, and annealing temperature. RTP shows the possibility of being applied to the PDA of Al2O3 film. Optimal PDA conditions should be studied for specific Al2O3 films, considering blistering.
이맹,신홍식,정광석,오성근,이호령,한규민,이가원,이희덕 대한전자공학회 2014 Journal of semiconductor technology and science Vol.14 No.1
Different kinds of post-deposition annealing (PDA) by a rapid thermal process (RTP) are used to enhance the field-effect passivation of Al2O3 film in crystal Si solar cells. To characterize the effects of PDA on Al2O3 and the interface, metal-insulator semiconductor (MIS) devices were fabricated. The effects of PDA were characterized as functions of RTP temperature from 400~700 °C and RTP time from 30~120 s. A high temperature PDA can retard the passivation of thin Al2O3 film in c-Si solar cells. PDA by RTP at 400 °C results in better passivation than a PDA at 400 °C in forming gas (H2 4% in N2) for 30 minutes. A high thermal budget causes blistering on Al2O3 film, which degrades its thermal stability and effective lifetime. It is related to the film structure, deposition temperature, thickness of the film, and annealing temperature. RTP shows the possibility of being applied to the PDA of Al2O3 film. Optimal PDA conditions should be studied for specific Al2O3 films, considering blistering.
Raj G. Chauhan,Saurabh K. Rajput,Himmat Singh Techno-Press 2022 Advances in energy research Vol.8 No.3
This research work focuses to design and simulate a 200W solar power system with electrical power conservation scheme as well as thermal power conservation modeling to improve power extraction from solar power plant. Many researchers have been already designed and developed different methods to extract maximum power while there were very researches are available on improving solar power thermally and mechanically. Thermal parameters are also important while discussing about maximizing power extraction of any power plant. A specific type of coolant which have very high boiling point is proposed to be use at the bottom surface of solar panel to reduce the temperature of panel in summer. A comparison between different maximum power point tracking (MPPT) technique and proposed MPPT technique is performed. Using this proposed Thermo-electrical MPPT (TE-MPPT) with Deep Learning Algorithm model 40% power is conserved as compared to traditional solar power system models.
Namkyoon Kim,I. H. Oh,Eunmo Lee,Sungmin Yoon,Minseok Kim,이철의 한국물리학회 2009 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.55 No.3
Organic photovoltaic cells based on poly(3-hexylthiophene) (P3HT):[6,6]-C61-butyric acid methyl ester (PCBM) were fabricated by using two different solvents. The photo-induced current and the open-circuit voltage (Voc) show a strong dependence on the polymer processing conditions. We found that the photovoltaic devices fabricated with the non-aromatic solvent chloroform (hereafter CF) have smaller photocurrents under the same reverse bias and higher Voc than the devices fabricated with the aromatic solvent chlorobenzene (hereafter CB). After post-thermal treatment, a strongly enhanced photo-induced current was observed in photovoltaic devices fabricated with CF and a slight photocurrent change was observed in the devices fabricated with CB. The dependence on the solvent and the post-thermal treatment was attributed to the different morphology of solvationinduced interpenetrating network.
정효철 ( Hyocheol Jung ),정지은 ( Ji-eun Jeong ),이상호 ( Sang-ho Lee ),김진철 ( Jin Chul Kim ),박영일 ( Young Il Park ) 한국공업화학회 2023 공업화학 Vol.34 No.3
근적외선 흡수 염료는 전통적으로 정보 기록 및 정보 표시 분야에 사용되었을 뿐만 아니라 최근 광학 필터, 바이오, 에너지 저장 및 변환, 코팅 첨가제 등 다양한 응용 분야에 적용되고 있다. 핸드폰이나 디지털 카메라에 사용되는 이미지 센서는 근적외선 영역에서도 감도를 나타내기 때문에 보다 선명한 이미지를 구현하기 위해 근적외선 광학필터가 필수적이다. 에너지 저장 및 변환이 중요해짐에 따라 투명 태양 전지 분야에서는 근적외선 영역까지 흡수 영역을 확장할 수 있도록 다양한 근적외선 흡수 소재가 개발되고 있으며, 이를 이용해 소자 효율을 향상시키는 연구가 진행되고 있다. 미래 모빌리티 기술로 많은 관심을 받고 있는 자기치유 코팅 시스템에 광-열 효과를 갖는 근적외선 흡수 염료가 도입되어 보다 효율적인 자기치유 성능을 구현하는 연구들도 보고되고 있다. 본 총설에서는 대표적인 근적외선 흡수 염료들의 화학 구조들을 소개하고, 근적외선 흡수 염료들을 기반으로 한 최신 응용 연구 동향에 대해 다뤄보고자 한다. Near-infrared (NIR) absorbing dyes have been applied to various applications such as optical filters, biotechnology, energy storage and conversion, coating additive, and traditionally information-storage materials. Because image sensors used in cellphones and digital cameras have sensitivity in the NIR region, the NIR cut-off filter is essential to achieving more clear images. As energy storage and conversion have been important, diverse NIR absorbing materials have been developed to extend the absorption region to the NIR region, and NIR absorbing materials-based research has proceeded to improve device performances. Adding NIR-absorbing dye with a photo-thermal effect to a self-healable coating system has been attractive for future mobility technology, and more effective self-healing properties have been reported. In this report, the chemical structures of representative NIR-absorbing dyes and state of the art research based on NIR-absorbing dyes are introduced.