노인의 평생학습 참여 저해요인이 학습몰입을 매개하여 프로그램 만족도에 미치는 영향 연구

이기언 ( Kieon Lee ),김계욱 ( Kyeuk Kim ) 사단법인 아시아문화학술원 2021 인문사회 21 Vol.12 No.1

연구 대상은 A광역시 평생교육기관의 평생학습 프로그램에 참여하는 학습자 중 만 65세 이상의 노인이다. 연구 결과 참여 저해요인 하위변수인 기관장애요인과 상황장애요인은 프로그램 만족도에 통계적으로 유의미한 부(-)의 영향을 미치고 있으며, 학습몰입은 성향장애요인을 매개하는 것으로 나타났다. 이는 노인의 평생학습 프로그램 만족도를 높이기 위해서는 기관장애요인과 상황장애요인들을 최소화하기 위한 구체적인 방안 마련, 다양한 수준과 영역의 평생학습에 참여하기 위한 지원이 필요하다는 결과이기도 하다. 따라서 학습자들이 자기주도적으로 교육과정을 구성하고 진행할 수 있는 체계를 마련하여 교육 프로그램 만족도를 높일 수 있어야 한다. This study attempts to investigate the effect of participation inhibiting factors on the program satisfaction through the medium of learning flow for the elderly participating in lifelong learning. This study collected data from the subjects of elderly people aged 65 years or older who participated in the lifelong learning program in A metropolitan city. From the results of this study, the effect of institution disorder and situation disorder, which is a sub variable of participation inhibiting factors, was found to have a statistically significant negative effect on program satisfaction, and it was found that the higher the learning flow of the learner, the higher the satisfaction of the program. These results suggest that in order to increase the satisfaction of lifelong learning programs in which the elderly participate, among the factors inhibiting learning participation, it is necessary to establish concrete measures to minimize the institution disorder and situation disorder factors and to support various levels and areas of lifelong learning. Therefore, the lifelong learning program for the elderly implies that it is a way to increase the learning flow and satisfaction of the program for the elderly by establishing a system for learners to organize and progress the curriculum so that they can immerse themselves.

Optimization of dyeing parameters of cotton standardized samples for laundry test of dye transfer inhibition program

Mingqi Guo,Li Jiang,Qingbo Yang,Chang Sun,Jianli Liu,Weidong Gao 한국의류학회 2020 Fashion and Textiles Vol.7 No.1

In order to prevent light-colored clothes from being stained by dyes released from dark clothes during the washing process, some new-type washing machines have developed the dye transfer inhibition washing program. However, there is no certified reference materials for the test of dye transfer inhibition function. To this end, cotton fabric and reactive dyes are used as experimental materials to prepare standardized samples to evaluate the dye transfer inhibition function of washing machines. Firstly, the single factor analysis method is used to analyze the significance of the dyeing parameters including dye dosage, dyeing temperature, sodium sulfate dosage and sodium carbonate dosage. Secondly, a 4-factor 5-level experimental design and theoretical prediction of the best dyeing parameters are successively carried out through central composite design and response surface method. Two evaluation indicators, the dye release amount of the standardized sample of dyed fabric and the color difference value of the standardized sample of white fabric after washing, are proposed as the response values for response surface analysis to search the optimal dying parameters in theory. The optimal dyeing parameters obtained through response surface analysis are that the dosage of dye is 5.63% (owf), the dyeing temperature is 60 °C, the dosage of sodium sulfate is 93.60 g/L, and the dosage of sodium carbonate is 15 g/L. Experimental results indicate that the standardized samples prepared with optimal dyeing parameters can effectively distinguish the dye transfer inhibition function of washing machines.

Simulation Study on Dependence of Channel Potential Self-Boosting on Device Scale and Doping Concentration in 2-D and 3-D NAND-Type Flash Memory Devices

CHO, Seongjae,LEE, Jung Hoon,KIM, Yoon,YUN, Jang-Gn,SHIN, Hyungcheol,PARK, Byung-Gook The Institute of Electronics, Information and Comm 2010 IEICE transactions on electronics Vol.93 No.5

<P>In performing the program operation of the NAND-type flash memory array, the program-inhibited cell is applied by a positive voltage at the gate, i.e., word-line (WL) on the floating channel while the program cell is applied by program voltage as the two ends, drain select line (DSL) and source select line (SSL), are turned on with grounded bit-line (BL). In this manner, the self-boosting of silicon channel to avoid unwanted program operation is made possible. As the flash memory device is aggressively scaled down and the channel doping concentration is increased accordingly, the coupling phenomena among WL, floating gate (FG)/storage node, and silicon channel, which are crucial factors in the self-boosting scheme, should be investigated more thoroughly. In this work, the dependences of self-boosting of channel potential on channel length and doping concentration in the 2-D conventional planar and 3-D FinFET NAND-type flash memory devices based on bulk-silicon are investigated by both 2-D and 3-D numerical device simulations. Since there hardly exists realistic ways of measuring the channel potential by physical probing, the series of simulation works are believed to offer practical insights in the variation of channel potential inside a flash memory device.</P>

대학 교원의 교수역량(teaching competency) 개선 요구도 및 강의 저해 요인 분석

송연옥 ( Yeon Ok Song ),노혜란 ( Hye Lan Roh ) 한국교육공학회 2016 교육공학연구 Vol.32 No.1

이 연구의 목적은 대학 교원의 교수역량 개선 요구도 및 강의 저해 요인을 양적ㆍ질적방법으로 분석하여 대학 교원에게 우선적으로 필요한 교수역량이 무엇인지를 규명하고 이를 개선하기 위한 교수지원 프로그램의 시사점을 도출하는 데 있다. 이를 위해 1차적으로, S대학교 교원 59명을 대상으로 교수역량 개선 요구도 조사를 위한 설문을 실시하였으며, 2차적으로, 교원 23명을 대상으로 행위사건면접조사(Behavior Event Interviews: BEI)를 실시하였다. 1차 자료는 보리치(Borich) 공식을 이용하여 요구도를 산출하였으며, 2차 자료 분석은 해석적 판독 방식인, 문장단위로 사례 절편화하기, 개념화하기, 범주화하기의 단계로 진행되었다. 1차 자료 분석결과, 교수들이 가장 중요하게 생각하는 역량과 실행도가 가장높다고 생각하는 역량은 ‘학생과의 의사소통’으로 동일했으며, 개선 요구도가 가장 높은 교수역량은 ‘교수학습 자료 개발’인 것으로 나타났다. 다음으로 2차 자료를 분석한 결과, 강의준비 영역(방향이 서지 않는 수업목표 설정, 학생에 대한 이해 부족), 강의진행 영역(소통되지 않는 수업, 수업에 몰입하지 못하는 학생들, 학습내용 소화에 대한 의문, 열심히 가르쳐야 한다는 강박), 강의정리 영역(평가 및 피드백에 맞서는 학생들, 강의에 대한 매너리즘) 등 총 3개 영역에서 8개의 강의 저해 요인이 도출되었다. 이 결과를 바탕으로 대학 교원에게 유용한 교수지원 프로그램 마련에 대한 방안들을 구체적으로 제안하였다. This study aims to investigate improvement needs and lecture inhibiting factors by identifying the teaching competency of university faculty members through a quantitative and qualitative approach, and to derive implications to improve the direction of the university CTL support program. To this end, primary data were collected through a teaching competency survey given to 59 faculty members of “S University,” and secondary data were collected through Behavior Event Interviews (BEI) with 23 faculty members. The Borich needs assessment model was used on the primary data to analyze needs, while the secondary data were analyzed through interpretive reading methods consisting of the fragmentation, conceptualization, and categorization of examples by sentence units. The results of the primary data analysis showed that the faculty evaluated “communication with students” as both the most important teaching competency and the competency that is presently being practiced best. The analysis also showed that the most needed improvement was the “development of faculty teaching materials.” Through the analysis of the secondary data, the following eight lecture inhibiting factors were deduced in three areas: lecture preparation (lack of direction in lecture objectives, lack of understanding of the students), lecture progression (lack of communication during lectures, students’ lack of concentration, questionable internalization of learning, compulsive need to teach zealously), and lecture conclusion (students disagreeing with evaluation and feedback, attitudes towards the lecture). Based on these results, detailed plans for support programs that would be useful to faculty are proposed.

인지구조중재이론의 FUG 프로그램이 유아의 인지기능에 미치는 영향

송미경,박혜원 인지발달중재학회 2012 인지발달중재학회지 Vol.3 No.2

국내에서 활발히 사용되고 있지 못한 Feuerstein 인지구조중재 프로그램의 효과를 분 석하기 위해 3세 ~ 7세 15명의 유아들을 대상으로 FIE-B 프로그램중의 FUG 프로그램 을 6주간 실시한 후 통제집단아동과 비교하였다. 실험집단의 경우 통제집단에 비해 주 의집중능력을 측정하는 지능검사(K-WISC-Ⅲ)의 숫자 검사 수행, 충동억제능력을 측정 하는 STROOP 검사 수행, 처리속도와 주의전환을 측정하는 Lahi 검사 그리고 비언어성 지능검사의 수행이 유의하게 증가하였다. 실험집단 유아들의 경우 FIE-B 프로그램 시 행을 통해 중재학습경험을 가짐으로써 문제접근 방법이 변화했을 뿐만 아니라 스스로 목표를 설정하고 탐색할 수 있었다. 또한 중재자의 중재와 더불어 또래간의 중재활동을 통해 다양한 문제 해결방법과 학습 기술전략을 획득할 수 있었다. 후속연구에서는 보다 장기적인 훈련효과를 측정할 필요가 있으며 인지구조중재 프로그램 전반에 걸친 효과를 확인하기 위해서는 11개 도구들을 모두 연구할 뿐 아니라 각 도구의 중재 특성을 비교 하는 연구도 필요하다.

Effects of channel doping concentration and fin dimension variation on self-boosting of channel potential in NAND-type SONOS flash memory array based on bulk-FinFETs

조성재,Jung-Dal Choi,박병국,조일환 한국물리학회 2010 Current Applied Physics Vol.10 No.4

In conducting the operation of the NAND-type flash memory array, program inhibition is performed by self-boosting of the potential of the floating silicon channel. However, the high program voltage substantially affects the adjacent cells sharing either the bit-line (BL) or the word-line (WL), which results in unwanted program operation, i.e., program disturbance, in the vicinity. In this work, the dependence of self-boosting effect of the channel potential on process variables and device dimensions have been investigated by 3-D device simulation. Through a series of simulations, the process parameters and device dimensions were identified that can provide the optimum condition in self-boosting of the channel potential avoiding such disturbance. The self-boosting effect exhibited a local maximum at the channel doping concentration of 6 × 1017 boron atoms/㎤ when the Si fin width was 30 nm and the channel length is 100 nm. Also, it is shown that the boosted channel potential displays monotonic increase with channel length, while it decreases monotonically as the silicon fin width becomes thicker at a given channel doping level. The interpretation of these findings utilizes the graphed results with the advanced capacitance model for a FinFET-based nonvolatile flash memory device.

Effects of channel doping concentration and fin dimension variation on self-boosting of channel potential in NAND-type SONOS flash memory array based on bulk-FinFETs

Cho, S.,Choi, J.D.,Park, B.G.,Cho, I.H. Elsevier 2010 Current Applied Physics Vol.10 No.4

In conducting the operation of the NAND-type flash memory array, program inhibition is performed by self-boosting of the potential of the floating silicon channel. However, the high program voltage substantially affects the adjacent cells sharing either the bit-line (BL) or the word-line (WL), which results in unwanted program operation, i.e., program disturbance, in the vicinity. In this work, the dependence of self-boosting effect of the channel potential on process variables and device dimensions have been investigated by 3-D device simulation. Through a series of simulations, the process parameters and device dimensions were identified that can provide the optimum condition in self-boosting of the channel potential avoiding such disturbance. The self-boosting effect exhibited a local maximum at the channel doping concentration of 6x10<SUP>17</SUP>boron atoms/cm<SUP>3</SUP> when the Si fin width was 30nm and the channel length is 100nm. Also, it is shown that the boosted channel potential displays monotonic increase with channel length, while it decreases monotonically as the silicon fin width becomes thicker at a given channel doping level. The interpretation of these findings utilizes the graphed results with the advanced capacitance model for a FinFET-based nonvolatile flash memory device.