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Broadband planar integration and packaging for millimeter-wave circuit design at the V-band
Yang, Ki Seok,Choi, Sung Tae,Tokuda, Kiyohito,Kim, Yong Hoon Wiley Subscription Services, Inc., A Wiley Company 2005 MICROWAVE AND OPTICAL TECHNOLOGY LETTERS Vol.44 No.4
<P>A broadband planar integration and packaging of millimeter-wave circuits based on the integrated waveguide (IWG) and grounded coplanar waveguide (GCPW) transitions are proposed and demonstrated at the V-band. A novel wideband microstrip-line-to-IWG transition is proposed for the planar integration of the rectangular waveguide devices and the insertion loss per one transition is less than 0.1 dB from 43 to 73 GHz. A proposed surface-mountable filter has an insertion loss of 3 dB and a 3.3% bandwidth at a center frequency of 62 GHz. A broadband ribbon interconnection exhibits low loss of 0.2 dB from DC to 70 GHz and the insertion loss of a single microstrip-to-waveguide transition is less than 0.4 dB from 50 to 75 GHz. © 2005 Wiley Periodicals, Inc. Microwave Opt Technol Lett 44: 371–374, 2005; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20638</P>
60 GHz 무선 LAN의 응용을 위한 고이득 저잡음 증폭기에 관한 연구
조창식,안단,이성대,백태종,진진만,최석규,김삼동,이진구 대한전자공학회 2004 電子工學會論文誌-SD (Semiconductor and devices) Vol.41 No.11
본 논문에서는 60 GHz 무선 LAN(wireless local area network) 응용을 위해 0.1 ㎛ Γ-gate pseudomorphic high electron mobility transistor(PHEMT)를 이용하여 V-band용 millimeter-wave monolithic integrated circuit(MIMIC) 저잡음 증폭기를 설계 및 제작하였다. 본 연구에서 개발한 PHEMT의 DC 특성으로 드레인 포화 전류 밀도(Idss)는 450 mA/mm, 최대 전달컨덕턴스(gm, max)는 363.6 mS/mm를 얻었으며, RF 특성으로 전류이득 차단주파수(fT)는 113 GHz, 최대 공진 주파수(fmax)는 180 GHz의 성능을 나타내었다. V-band MIMIC 저잡음 증폭기의 개발을 위해 PHEMT의 비선형 모델과 CPW 라이브러리를 구축하였으며, 이를 이용하여 V-band MIMIC 저잡음 증폭기를 설계하였다. 설계된 V-band MIMIC 저잡음 증폭기는 본 연구에서 개발된 PHEMT 기반의 MIMIC 공정을 이용해 제작되었으며, V-band MIMIC 저잡음 증폭기의 측정결과, 60 GHz에서 S21이득은 21.3 dB, 입력반사계수는 -10.6 dB 그리고 62.5 GHz에서 출력반사계수는 -29.7 dB의 특성을 나타내었다. V-band MIMIC 저잡음 증폭기의 잡음지수 측정결과, 60 GHz에서 4.23 dB의 특성을 나타내었다. In this paper, millimeter-wave monolithic integrated circuit(MIMIC) low noise amplifier(LNA) for V-band, which is applicable to 60 GHz wireless local area network(WLAN), was fabricated using the high performance 0.1 ${\mu}{\textrm}{m}$ $\Gamma$-gate pseudomorphic high electron mobility transistor(PHEMT). The DC characteristics of PHEMT are drain saturation current density(Idss) of 450 mA/mm and maximum transconductance(gm, max) of 363.6 mS/mm. The RF characteristics were obtained the current gain cut-off frequency(fT) of 113 GHz and the maximum oscillation frequency(fmax) of 180 GHz. V-band MIMIC LNA was designed using active and passive device library, which is composed of 0.1 ${\mu}{\textrm}{m}$ $\Gamma$-gate PHEMT and coplanar waveguide(CPW) technology. The designed V-band MIMIC LNA was fabricated using integrated unit processes of active and passive device. The measured results of V-band MIMIC LNA are shown S21 gain of 21.3 dB, S11 of -10.6 dB at 60 GHz and S22 of -29.7 dB at 62.5 GHz. The measured result of V-band MIMIC LNA was shown noise figure (NF) of 4.23 dB at 60 GHz.
Choi, Sung Tae,Yang, Ki Seok,Nishi, Seiji,Shimizu, Satoru,Tokuda, Kiyohito,Kim, Yong Hoon Wiley Subscription Services, Inc., A Wiley Company 2006 MICROWAVE AND OPTICAL TECHNOLOGY LETTERS Vol.48 No.6
<P>A 60-GHz point-to-multipoint (P-MP) fiber-radio access link with data rate of 156 Mb/s is presented. For a compact system configuration, a small-size 60-GHz transceiver module with planar antennas is developed. A point-to-point (P-P) full-duplex fiber-optic configuration is extended to the scheme with multiple access points (APs) by using a tree coupler and a dense wavelength-division multiplexing (DWDM) multiplexer (MUX). The bit error rate (BER) performances of the 60-GHz fiber-radio access link are measured and compared. Furthermore, the effect of the extension to the scheme with multiple APs is evaluated. © 2006 Wiley Periodicals, Inc. Microwave Opt Technol Lett 48: 1219–1222, 2006; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.21576</P>
A D-Band Subharmonically-Pumped Resistive Mixer Based on a 100 nm MHEMT Technology
Y. Campos-Roca,A. Tessmann,H. Massler,A. Leuther 한국전자통신연구원 2011 ETRI Journal Vol.33 No.5
A D-band subharmonically-pumped resistive mixer has been designed, processed, and experimentally tested. The circuit is based on a 180-degree power divider structure consisting of a Lange coupler followed by a lambda/4 transmission line (at local oscillator (LO) frequency). This monolithic microwave integrated circuit (MMIC) has been realized in coplanar waveguide technology by using an InAlAs/InGaAs-based metamorphic high electron mobility transistor process with 100-nm gate length. The MMIC achieves a measured conversion loss between 12.5 dB and 16 dB in the radio frequency bandwidth from 120 GHz to 150 GHz with 4-dBm LO drive and an intermediate frequency of 100 MHz. The input 1-dB compression point and IIP3 were simulated to be 2 dBm and 13 dBm, respectively.
A Fully-Integrated Low Power K-band Radar Transceiver in 130nm CMOS Technology
Kim, Seong-Kyun,Cui, Chenglin,Kim, Byung-Sung,Kim, SoYoung The Institute of Electronics and Information Engin 2012 Journal of semiconductor technology and science Vol.12 No.4
A fully-integrated low power K-band radar transceiver in 130 nm CMOS process is presented. It consists of a low-noise amplifier (LNA), a down-conversion mixer, a power amplifier (PA), and a frequency synthesizer with injection locked buffer for driving mixer and PA. The receiver front-end provides a conversion gain of 19 dB. The LNA achieves a power gain of 15 dB and noise figure of 5.4 dB, and the PA has an output power of 9 dBm. The phase noise of VCO is -90 dBc/Hz at 1-MHz offset. The total dc power dissipation of the transceiver is 142 mW and the size of the chip is only $1.2{\times}1.4mm^2$.
A Fully-Integrated Low Power K-band Radar Transceiver in 130nm CMOS Technology
Seong-Kyun Kim,Chenglin Cui,Byung-Sung Kim,SoYoung Kim 대한전자공학회 2012 Journal of semiconductor technology and science Vol.12 No.4
A fully-integrated low power K-band radar transceiver in 130 ㎚ CMOS process is presented. It consists of a low-noise amplifier (LNA), a downconversion mixer, a power amplifier (PA), and a frequency synthesizer with injection locked buffer for driving mixer and PA. The receiver front-end provides a conversion gain of 19 ㏈. The LNA achieves a power gain of 15 ㏈ and noise figure of 5.4 ㏈, and the PA has an output power of 9 ㏈m. The phase noise of VCO is -90 ㏈c/㎐ at 1-㎒ offset. The total dc power dissipation of the transceiver is 142 ㎽ and the size of the chip is only 1.2 × 1.4 ㎟.
Sona Carpenter,Herbert Zirath,Zhongxia Simon He,Mingquan Bao 한국통신학회 2021 Journal of communications and networks Vol.23 No.2
This paper presents design and characterizationof single-chip 110–170 GHz (D-band) direct conversion in phase/quadrature-phase (I/Q) transmitter and receiver monolithicmicrowave integrated circuits (MMICs), realized in a 130 nm SiGeBiCMOS process with ft/fmax of 250 GHz/370 GHz. The chipset issuitable for low power wideband communication and can be usedin both homodyne and heterodyne architectures. The Transmit ter chip consists of a six-stage power amplifier, an I/Q modulator,and a LO multiplier chain. The LO multiplier chain consists offrequency sixtupler followed by a two-stage amplifier. It exhibitsa single sideband conversion gain of 23 dB and saturated outputpower of 0 dBm. The 3 dB RF bandwidth is 31 GHz from 114 to145 GHz. The receiver includes a low noise amplifier, I/Q demodu lator and x6 multiplier chain at the LO port. The receiver providesa conversion gain of 27 dB and has a noise figure of 10 dB. It has 3dB RF bandwidth of 28 GHz from 112-140 GHz. The transmitterand receiver have dc power consumption of 240 mW and 280 mW,respectively. The chip area of each transmitter and receiver circuitis 1.4 mm × 1.1 mm.