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운모 기판을 플렉시블 다결정 실리콘 박막 트랜지스터에 적용하기 위한 버퍼층 형성 연구
오준석,이승렬,이진호,안병태,Oh, Joon-Seok,Lee, Seung-Ryul,Lee, Jin-Ho,Ahn, Byung-Tae 한국재료학회 2007 한국재료학회지 Vol.17 No.2
Polycrystalline silicon (poly-Si) thin film transistors (TFTs) might be fabricated on the mica substrate and transferred to a flexible plastic substrate because mica can be easily cleaved into a thin layer. To overcome the adhesion and stress problem between poly-Si film and mica substrate, a buffer layer consisting of $SiO_x/Ta/Ti$ three layers has been developed. The $SiO_x$ layer is for electrical isolation, the Ti layer is for adhesion of $SiO_{x}$ and mica. and Ta is for stress relief between $SiO_x$ and Ti. A TFT was fabricated on the mica substrate by a conventional Si process and was successfully transferred to a plastic substrate.
( Byunggu Kim ),( Jae-young Leem ) 대한금속재료학회(구 대한금속학회) 2017 대한금속·재료학회지 Vol.55 No.1
ZnO buffer layers were deposited on mica substrates using a sol-gel spin coating method. Then, a thin film of metallic Zn was deposited onto the ZnO buffer layer/mica substrate using a thermal evaporator, and the deposited Zn thin films were then thermally oxidized in a furnace at 500 ℃ for 2 h in air. Finally, In-doped ZnO (IZO) thin films with different In concentrations were grown on the oxidized ZnO film/ZnO buffer layer/mica substrates using the sol-gel spin-coating method. All the IZO films showed ZnO peaks with similar intensities. The full width at half maximum values of the ZnO (002) peak for the IZO thin films decreased with an increase in the In concentration to 1 at%, because the crystallinity of the films was enhanced. However, a further increase in the In concentration caused the crystal quality to degrade. This might be attributed to the fact that the higher In doping resulted in an increase in the number of ionized impurities. The Urbach energy (E<sub>U</sub>) values of the IZO thin film decreased with an increase in the In concentration to 1 at% because of the enhanced crystal quality of the films. The EU values for the IZO thin films increased with the In concentration from 1 at% to 3 at%, reflecting the broadening of localized band tail state near the conduction band edge of the films. (Received March 4, 2016; Accepted July 22, 2016)
Mechanical stability of ferrimagnetic CoFe2O4 flexible thin films
오광림,곽영민,공다솔,류상균,Kim Hyuntae,Jeen Hyoungjeen,최수봉,정종훈 한국물리학회 2021 Current Applied Physics Vol.31 No.-
We fabricated high-quality ferrimagnetic CoFe2O4 (CFO) thin films on a mica substrate using a pulsed laser deposition technique. High-resolution X-ray diffraction and transmission electron microscopy revealed that the film grew epitaxially with the relationships of CFO <1-10> || Mica [010] and CFO [111] || Mica [001]. The films were highly flexible in terms of both inward and outward bending, and exhibited clear ferrimagnetic hysteresis with weak anisotropy in both the in-plane and out-of-plane directions. We observed that the magnetization of CFO films was robust against mechanical stimuli without microcracks. The remnant magnetization and coercive field were within 8% and 11% over a strain of ±0.54%. As the number of bending cycles increased, the magnetic easy axis became more closely aligned to the out-of-plane direction, without any noticeable change in domain size.