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- 주제어 : Fluxless bonding (검색결과 5 건)
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이승현,김영호,Lee Seung-Hyun,Kim Young-Ho 한국마이크로전자및패키징학회 2004 마이크로전자 및 패키징학회지 Vol.11 No.2
본 실험에서는 Ag 층을 이용한 무 플럭스 접합 공정을 개발하였으며 Ag의 유무에 따른 효과를 관찰하기 위해 In ($10{\mu}m$)과 Sn ($10{\mu}m$)솔더 및 Ag (100 nm)/In과 Ag/Sn 솔더를 thermal evaporation 방법으로 하부 금속층 위에 형성하였다. 접합부의 접촉저항과 전단 하중을 측정하기 위해 쿠폰시편을 제조하였으며 이리한 쿠폰시편은 $130^{\circ}C$에서 0.8, 1.6, 3.2 MPa의 접합압력을 가하여 30초간 접합을 실시하였다. 전단하중과 4단자 저항측정법을 이용하여 접합부의 특성을 분석하였으며 주사전자현미경(Scanning Electron Microscope), EDS (Energy Dispersive Spectrometry)과 X-ray mapping을 통해 접합부를 관찰하였다. 전단하중 측정 결과 0.8 MPa에서는 In-Sn 솔더의 접합이 이루어지지 않았으며 접합압력이 증가해도 Ag/In-Ag/Sn 시편의 전단하중 측정값이 In-Sn 시편에 비해 높게 나타났다. 접합부의 저항감은 $2-4\;m{\Omega}$을 나타내었으며 접합압력이 증가할수록 In-Sn 혼합층이 더 많이 관찰되었다. We utilized Ag capping layer for fluxless bonding. To investigate the effect of Ag capping layer, two sets of sample were used. One set was bare In and Sn solders. The other set was In and Sn solders with Ag capping layer. In ($10{\mu}m$) and Sn ($10{\mu}m$) solders were deposited on Cu/Ti/Si substrate using thermal-evaporation, and Ag ($0.1{\mu}m$) capping layers were deposited on In and Sn solders. Solder joints were made by joining two In and Sn deposited specimens at $130^{\circ}C$ for 30 s under 0.8, 1.6, 3.2 MPa using thermal compression bonder. The contact resistance was measured using four-point probe method. The shear strength of the solder joints was measured by the shear test of cross-bar sample in the direction. The microstructure of the solder joints was characterized with SEM and EDS. In and Sn solders without Ag capping layers were only bonded at $130^{\circ}C$ under high bonding pressure. Also the shear strength of the In-Sn solder joints under was lower than that of the Ag/In-Ag/Sn solder joints. The resistance of the solder joints was $2-4\;m{\Omega}$ The solder joints consisted of In-rich phase and Sn-rich phase and the intermixed compounds were found at the interface. As bonding pressure increased, the intermixed compounds formed more.
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Ar+H_2 플라즈마 전처리에 의한 Sn-3.5Ag 납재 범프 플립칩의 무플럭스 접합
洪淳珉,姜春植,鄭在弼 대한금속재료학회 2002 대한금속·재료학회지 Vol.40 No.5
Plasma treatment was applied to remove the surface oxide of Sn-3.5 mass%Ag solder bump for fluxless flip chip bonding. The effects of plasma process parameters, such as plasma power, treatment time, chamber pressure and H_2 addition, on Sn-oxide etching characteristics were evaluated by Auger depth profile analysis. The die shear tests were performed to evaluate the adhesion strength of Sn-3.5%Ag solder bump flip chip. The addition of H_2 to Ar plasma improved the oxide etching characteristics. A low chamber pressure was more effective in oxide removal. The die shear strength of the plasma-treated Sn-3.5Ag solder flip chip was higher than that of the non-treated chip, but it was lower than that of the fluxed chip. The difference in the die shear strength between the plasma-treated specimen and the non-treated specimen increased with increasing bonding temperature. The plasma-treated flip chip fractured at the solder/TSM interface at low bonding temperature, but at the solder/UBM interface at high bonding temperature.
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Sn-3.5Ag 솔더 범프 플립칩의 무플럭스 열초음파 접합
洪淳珉,姜春植,鄭在弼 대한금속재료학회 2002 대한금속·재료학회지 Vol.40 No.6
The thermosonic bonding was investigated as a fluxless solder bump flip chip bonding method. The 100 ㎛-diameter Sn-3.5 mass%Ag solder bumps were formed on test flip chip by laser ball bonding process. The test flip chips were bonded to a TSM-coated glass substrate using thermosonic bonding method at different temperature, bonding load and ultrasonic power. The die shear strength was evaluated and fracture surfaces were examined with SEM. The Sn-3.5Ag solder flip chip bonding was possible at lower temperature than the melting point of the solder. The die shear strength increased with increasing bonding temperature, bonding load, and ultrasonic power. However, at excessive bonding load condition over 1.0 N/bump, the die shear strength decreased due to the fracture at UBM/ Si-chip interface. The bump height decreased with increasing bonding load but did not change with ultrasonic power.
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Sub 200 ℃ Fluxless Indium-Tin (In-Sn) Eutectic Bonding for Monolithic 3D-IC
유광위,박진홍 한국물리학회 2014 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.65 No.7
In this work, a low-temperature eutectic bonding process based on the formation of an indium(In)-tin (Sn) alloy is studied at temperatures below 200 ℃. The formation of the In-Sn alloy is investigatedthrough a secondary ion mass spectroscopy (SIMS) depth profiling analysis, and the qualityof the bonding region is evaluated by using cross-sectional scanning electron microscope(SEM) andshearing force measurements. At 170 ℃, which is above the melting temperature of In (156 ℃),a large amount of In-Sn alloy is formed without the assistance of any flux owing to the expandedeutectic composite range and the improved quality of the In-Sn contact, resulting in a higher bondingstrength (205 N). The obtained results show the feasibility of using a low-temperature fluxlessbonding process for the fabrication of upper-level devices in monolithic three-dimensional integratedcircuits (3D-ICs).
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AuSn 솔더 박막의 스퍼터 증착 최적화와 접합강도에 관한 연구
김동진,이택영,이홍기,김건남,이종원,Kim, D.J.,Lee, T.Y.,Lee, H.K.,Kim, G.N.,Lee, J.W. 한국마이크로전자및패키징학회 2007 마이크로전자 및 패키징학회지 Vol.14 No.2
본 연구에서는 Au 와 Sn을 rf-magnetron sputter를 이용하여 다층막(multilayer)과 동시증착(Co-sputter)방법으로 스퍼터링하여 기판위에 AuSn 솔더를 형성하였고, 솔더의 조성제어와 특성 분석을 통해 Sn rich AuSn 솔더의 형성 기술에 대하여 연구하였다. AuSn 솔더를 형성하기 앞서 Au와 Sn에 대하여 단일 금속 증착을 하였다. 이를 토대로 AuSn솔더를 증착하기 위한 실험 조건을 확보하였다. 증착변수로는 기판의 온도, rf 전력과 두께 비를 이용하였다. 다층막의 경우, 고온의 기판에서 솔더 합금의 표면거칠기와 조성이 보다 정확하게 제어되었다. 이에 비해 동시증착 솔더는 기판의 온도에 의한 조성의 변화가 거의 없었으나, rf전력에 의해서 조성이 보다 쉽게 제어할 수 있었다. 여기에 더해, 동시 증착 솔더 박막의 대부분은 증착동안에 금속간 화합물로 변화한 것을 알 수 있었다. 화합물의 종류는 XRD로 분석하였다. 형성된 솔더 박막을 플럭스를 이용하지 않고 리드프레임에 접합하여 접합강도를 측정하였다. 다층형의 경우 Au 10wt%의 조건에서 최대 $33(N/mm^2)$ 전단응력을 나타내었으며, 동시증착형은 Au 5wt%에서 $460(N/mm^2)$ 전단응력을 나타내었다. Au-Sn solder alloy were deposited in multilayer and co-sputtered film by rf-magnetron sputter and the composition control and analysis were studied. For the alloy deposition condition, each components of Au or Sn were deposited separately. On the basis of pure Sn and Au deposition, the deposition condition for Au-Sn solder alloy were set up. As variables, the substrate temperature, the rf-power, and the thickness ratio were used for the optimum composition. For multilayer solder alloy, the roughness and the composition of solder alloy were controlled more accurately at the higher substrate temperature. In contrast, for co-sputtered solder, the substrate temperature influenced little to the composition, but the composition could be controlled easily by rf-power. In addition, the co-sputtered solder film mostly consisted of intermetallic compound, which formed during deposition. The compound were confirmed by XRD. Without flux during bonding of solder alloy film on leadframe, the adhesion strength were measured. The maximum shear stress was $330(N/mm^2)$ for multilayer solder with Au 10wt% and $460(N/mm^2)$ for co-sputtered solder with Au 5wt%.
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