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- 검색키워드
- 주제어 : Fluxless bonding (검색결과 5 건)
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Ar+H_2 플라즈마 전처리에 의한 Sn-3.5Ag 납재 범프 플립칩의 무플럭스 접합
洪淳珉,姜春植,鄭在弼 대한금속재료학회 2002 대한금속·재료학회지 Vol.40 No.5
Plasma treatment was applied to remove the surface oxide of Sn-3.5 mass%Ag solder bump for fluxless flip chip bonding. The effects of plasma process parameters, such as plasma power, treatment time, chamber pressure and H_2 addition, on Sn-oxide etching characteristics were evaluated by Auger depth profile analysis. The die shear tests were performed to evaluate the adhesion strength of Sn-3.5%Ag solder bump flip chip. The addition of H_2 to Ar plasma improved the oxide etching characteristics. A low chamber pressure was more effective in oxide removal. The die shear strength of the plasma-treated Sn-3.5Ag solder flip chip was higher than that of the non-treated chip, but it was lower than that of the fluxed chip. The difference in the die shear strength between the plasma-treated specimen and the non-treated specimen increased with increasing bonding temperature. The plasma-treated flip chip fractured at the solder/TSM interface at low bonding temperature, but at the solder/UBM interface at high bonding temperature.
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이승현,김영호,Lee Seung-Hyun,Kim Young-Ho 한국마이크로전자및패키징학회 2004 마이크로전자 및 패키징학회지 Vol.11 No.2
We utilized Ag capping layer for fluxless bonding. To investigate the effect of Ag capping layer, two sets of sample were used. One set was bare In and Sn solders. The other set was In and Sn solders with Ag capping layer. In ($10{\mu}m$) and Sn ($10{\mu}m$) solders were deposited on Cu/Ti/Si substrate using thermal-evaporation, and Ag ($0.1{\mu}m$) capping layers were deposited on In and Sn solders. Solder joints were made by joining two In and Sn deposited specimens at $130^{\circ}C$ for 30 s under 0.8, 1.6, 3.2 MPa using thermal compression bonder. The contact resistance was measured using four-point probe method. The shear strength of the solder joints was measured by the shear test of cross-bar sample in the direction. The microstructure of the solder joints was characterized with SEM and EDS. In and Sn solders without Ag capping layers were only bonded at $130^{\circ}C$ under high bonding pressure. Also the shear strength of the In-Sn solder joints under was lower than that of the Ag/In-Ag/Sn solder joints. The resistance of the solder joints was $2-4\;m{\Omega}$ The solder joints consisted of In-rich phase and Sn-rich phase and the intermixed compounds were found at the interface. As bonding pressure increased, the intermixed compounds formed more.
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Sn-3.5Ag 솔더 범프 플립칩의 무플럭스 열초음파 접합
洪淳珉,姜春植,鄭在弼 대한금속재료학회 2002 대한금속·재료학회지 Vol.40 No.6
The thermosonic bonding was investigated as a fluxless solder bump flip chip bonding method. The 100 ㎛-diameter Sn-3.5 mass%Ag solder bumps were formed on test flip chip by laser ball bonding process. The test flip chips were bonded to a TSM-coated glass substrate using thermosonic bonding method at different temperature, bonding load and ultrasonic power. The die shear strength was evaluated and fracture surfaces were examined with SEM. The Sn-3.5Ag solder flip chip bonding was possible at lower temperature than the melting point of the solder. The die shear strength increased with increasing bonding temperature, bonding load, and ultrasonic power. However, at excessive bonding load condition over 1.0 N/bump, the die shear strength decreased due to the fracture at UBM/ Si-chip interface. The bump height decreased with increasing bonding load but did not change with ultrasonic power.
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AuSn 솔더 박막의 스퍼터 증착 최적화와 접합강도에 관한 연구
김동진,이택영,이홍기,김건남,이종원,Kim, D.J.,Lee, T.Y.,Lee, H.K.,Kim, G.N.,Lee, J.W. 한국마이크로전자및패키징학회 2007 마이크로전자 및 패키징학회지 Vol.14 No.2
Au-Sn solder alloy were deposited in multilayer and co-sputtered film by rf-magnetron sputter and the composition control and analysis were studied. For the alloy deposition condition, each components of Au or Sn were deposited separately. On the basis of pure Sn and Au deposition, the deposition condition for Au-Sn solder alloy were set up. As variables, the substrate temperature, the rf-power, and the thickness ratio were used for the optimum composition. For multilayer solder alloy, the roughness and the composition of solder alloy were controlled more accurately at the higher substrate temperature. In contrast, for co-sputtered solder, the substrate temperature influenced little to the composition, but the composition could be controlled easily by rf-power. In addition, the co-sputtered solder film mostly consisted of intermetallic compound, which formed during deposition. The compound were confirmed by XRD. Without flux during bonding of solder alloy film on leadframe, the adhesion strength were measured. The maximum shear stress was $330(N/mm^2)$ for multilayer solder with Au 10wt% and $460(N/mm^2)$ for co-sputtered solder with Au 5wt%.
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Sub 200 ℃ Fluxless Indium-Tin (In-Sn) Eutectic Bonding for Monolithic 3D-IC
유광위,박진홍 한국물리학회 2014 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.65 No.7
In this work, a low-temperature eutectic bonding process based on the formation of an indium(In)-tin (Sn) alloy is studied at temperatures below 200 ℃. The formation of the In-Sn alloy is investigatedthrough a secondary ion mass spectroscopy (SIMS) depth profiling analysis, and the qualityof the bonding region is evaluated by using cross-sectional scanning electron microscope(SEM) andshearing force measurements. At 170 ℃, which is above the melting temperature of In (156 ℃),a large amount of In-Sn alloy is formed without the assistance of any flux owing to the expandedeutectic composite range and the improved quality of the In-Sn contact, resulting in a higher bondingstrength (205 N). The obtained results show the feasibility of using a low-temperature fluxlessbonding process for the fabrication of upper-level devices in monolithic three-dimensional integratedcircuits (3D-ICs).
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