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김익현,Daeho Kang,임재영,남기웅,윤현식,김소람,김종수,김진수 한국물리학회 2014 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.64 No.1
Thin films of undoped ZnO and Cr-doped ZnO were deposited by sol-gel spin coating. Thestructural and the optical properties of Cr-doped ZnO thin films with different concentrations of Cr(0-2.5 at.% relative to Zn) were studied by using X-ray diffraction (XRD) and photoluminescence(PL). The XRD showed that the thin films grew with a preferred c-axis orientation. No traces ofthe Cr metal, oxides, or a binary Zn-Cr phase were detected. This means that the addition of Crinto the ZnO matrix preserved the formation of the wurtzite structure of ZnO. However, increasingthe amount of Cr dopant in the ZnO thin films caused distortion due to the intercalation of thedopant atoms into the wurtzite structure. The PL spectra showed a blue shift in the near-band-edgeemission and a decrease in the deep-level emission upon increasing the amount of Cr doping. Thenarrowest full width at half maximum (FWHM) was observed in ZnO thin films with 2.5 at.% Crdoping. The FWHM gradually decreased upon further increasing the Cr concentration.
Fabrication and Characteristics of Indium Tin Oxide Films on CR39 Substrate for OTFT
Kwon, Sung-Yeol The Korean Institute of Electrical and Electronic 2006 Transactions on Electrical and Electronic Material Vol.7 No.5
The Indium tin oxide (ITO) films were deposited on CR39 substrate using DC magnetron sputtering. ITO thin films deposited at room temperature because CR39 substrates its glass-transition temperature of is $130^{\circ}C$. ITO thin films used bottom and top electrode and for organic thin film transparent transistor.(OTFT) ITO thin film electrodes electrical properties and optical transparency properties in the visible wavelength range (300 - 800 nm) strongly dependent on volume of oxygen percent. For the optimum resistivity and transparency of ITO thin film electrode achieved with a 75 W plasma power, 10 % volume of oxygen and a 27 nm/min deposition rate. Above 85 % transparency in the visible wavelength range (300 - 800 nm) measured without post annealing process and $9.83{times}10{-4}{\Omega}cm$ a low resistivity was measured thickness of 300 nm.
Fabrication and Characteristics of Indium Tin Oxide Films on Polycarbonates CR39 Substrate for OTFTs
Kwon, Sung-Yeol Materials Research Society of Korea 2007 한국재료학회지 Vol.17 No.4
Indium tin oxide (ITO) films were deposited on polycarbonate CR39 substrate using DC magnetron sputtering. ITO thin films were deposited at room temperature because glass-transition temperature of CR39 substrate is $130^{circ}C$ ITO thin films are used as bottom and top electrodes and for organic thin film transparent transistor (OTFT). The electrodes electrical properties of ITO thin films and their optical transparency properties in the visible wavelength range (300-800 nm) strongly depend on the volume of oxygen percent. The optimum resistivity and transparency of ITO thin film electrode was achieved with a 75 W plasma power, 10 % volume of oxygen and a 27 nm/min deposition rate. Above 85% transparency in the visible wavelength range (300-800 nm) was measured without post annealing process, and resistivity as low as $9.83{\times}^{TM}10^{-4}{\Omega}$ cm was measured at thickness of 300 nm.
Fabrication and Characteristics of Indium Tin Oxide Films onCR39 Substrate for OTFT
권성열 한국전기전자재료학회 2006 Transactions on Electrical and Electronic Material Vol.7 No.5
The Indium tin oxide (ITO) films were deposited on CR39 substrate using DC magnetron sputtering. ITO thin films deposited at room temperature because CR39 substrates its glass-transition temperature of is 130 ℃. ITO thin films used bottom and top electrode and for organic thin film transparent transistor.(OTFT) ITO thin film electrodes electrical properties and optical transparency properties in the visible wavelength range (300 – 800 nm) strongly dependent on volume of oxygen percent. For the optimum resistivity and transparency of ITO thin film electrode achieved with a 75 W plasma power, 10 % volume of oxygen and a 27 nm/min deposition rate. Above 85 % transparency in the visible wavelength range (300 – 800 nm) measured without post annealing process and 9.83ⅹ10-4 Ωcm a low resistivity was measured thickness of 300 nm.
플라즈마 포커스를 이용한 크롬 산화물 박막 성장의 분위기 기체 압력 의존성 연구
정규호,이재갑,임현식,이전국,Jung, Kyoo-Ho,Lee, Jae-Kap,Im, Hyun-Sik,Karpinski, L.,Scholz, M.,Lee, Jeon-Kook 한국재료학회 2007 한국재료학회지 Vol.17 No.6
Chromium oxide thin films have been deposited on silicon substrates using a tabletop 9kJ mathertyped plasma focus (PF) device. Before deposition, pinch behavior with gas pressure was observed. Strength of pinches was increased with increasing working pressure. Deposition was performed at room temperature as a function of working pressure between 50 and 1000 mTorr. Composition and surface morphology of the films were analyzed by Auger Electron Spectroscopy and Scanning Electron Microscope, respectively. Growth rates of the films were decreased with pressure. The oxide films were polycrystalline containing some impurities, Cu, Fe, C and revealed finer grain structure at lower pressure.