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A Study on the Magnetic and Electrical Properties of Al-Co/AIN-Co
Chang-Hwan Bae 호서대학교 공업기술연구소 2013 공업기술연구 논문집 Vol.32 No.2
Annealing techniques were applied to induce phase transformations and phase separations in AIN-Co thin films containing various amounts of Co content and AIN-Co/Al-Co multilayer thin films having different layer thicknesses, prepared by a two-facing-target type dc sputtering (TFTS) system. X-ray diffraction and electron diffraction techniques were used to examine the behavior of phase transformations and phase separations, and transmission electron microscopy were also used to evaluate the microstructural changes in the films. Magnetization and resistivity of the films were evaluated by VSM and four-probe method respectively. It was found that magnetization and resistivity were very sensitive to the phase transformations and phase separations as well as the changes in the microstructure of the films.
Poly-Crystalline Thin-Film by Aluminum Induced Crystallization on Aluminum Nitride Substrate
Muhammad Fahad Bhopal,이두원,이수홍 대한금속·재료학회 2016 ELECTRONIC MATERIALS LETTERS Vol.12 No.5
Thin-film polycrystalline silicon (pc-Si) on foreign (non-silicon)substrates has been researched by various research groups for theproduction of photovoltaic cells. High quality pc-Si depositionon foreign substrates with superior optical properties isconsidered to be the main hurdle in cell fabrication. Metalinduced crystallization (MIC) is one of the renowned techniquesused to produce this quality of material. In the current study, analuminum induced crystallization (AIC) method was adopted toproduce pc-Si thin-film on aluminum nitride (AlN) substrate by aseed layer approach. Aluminum and a-Si layer were depositedusing an e-beam evaporator. Various annealing conditions wereused in order to investigate the AIC grown pc-Si seed layers forprocess optimization. The effect of thermal annealing on grainsize, defects preferentially crystallographic orientation of thegrains were analyzed. Surface morphology was studied using anoptical microscope. Poly-silicon film with a crystallinity fractionbetween 95-100% and an FWHM between 5-6 cm−1 is achievable at low temperatures and for short time intervals. A grainsize of about 10 micron can be obtained at a low deposition rate on an AIN substrate. Similarly, Focused ion beam (FIB) alsoshowed that at 425 °C sample B and at 400 °C sample A were fully crystallized. The crystalline quality of pc-Si wasevaluated using μ-Raman spectroscopy as a function of annealed conditions and Grazing incidence X-ray diffraction(GIXRD) was used to determine the phase direction of the pc-Si layer. The current study implicates that a poly-silicon layerwith good crystallographic orientation and crystallinity fraction is achievable on AIN substrate at low temperatures and shorttime frames.
반응성 스퍼터링으로 제조한 MIS 소자용 AIN 절연박막의 전기전도 메커니즘
秋順男(Soon-Nam Chu),朴正哲(Jung-Cheul Park),權廷烈(Jung-Youl Kwon),李憲用(Heon-Yong Lee) 대한전기학회 2007 전기학회논문지 Vol.56 No.4
We have studied the variable conditions of reactive sputtering to prepare AIN thin film. The leakage current showed below 10??A/㎠ at the deposition temperature of 250℃ and 300℃ in the field of 0.1 ㎹/㎝, and it was gradually increased and to be saturated in 0.2 ㎹/㎝. The C-V characteristics of the above mentioned deposition temperature conditions showed a deep depletion phenomenon at inversion region. The C-V characteristics showed similarly under the DC power conditions of 100 and 150 W but were degraded at 200W. When the DC power was 100, 200, and 300 W the dielectric breakdown phenomenon was shown in 2.8, 3.2 and 5.2 ㎹/㎝, respectively. It was found that AIN film was dominated by Poole-Frenkel conduction mechanism.
박정철,추순남,권정렬,이헌용,Park, Jung-Cheul,Chu, Soon-Nam,Kwon, Jung-Youl,Lee, Heon-Yong 한국전기전자재료학회 2008 전기전자재료학회논문지 Vol.21 No.1
To study the effects of $H_2$ gas on AIN insulation thin film, we prepared AIN thin film on Si and GaAs substrate by means of reactive sputtering method using $H_2$ gas as an additives, With treatment conditions of $H_2$ gas AIN thin film shows variable electrical properties such as its crystallization and hysterisis affected to electrical property, As a results, AIN thin film fabricated on Si substrate post-treated with $H_2$ gas for 20 minutes shows much better an insulation property than that of pre-treated, And AIN film treated with $H_2$ gas comparing to non-treated AIN film shows a flat band voltage decreasment. But In GaAs substrate $H_2$ gas does not effect on the flat band voltage.
RF Magnetron Sputtering법에 의해 형성된 AIN 박막의 특성
정영철 경주대학교 정보전자기술연구소 2002 情報電子技術論叢 Vol.1 No.-
Aluminum nitride (AIN) thin films were deposited on silicon substrates by RF magnetron sputtering at various deposition conditions. The characteristic of AIN thin film were investigated by XRD, AES, HP-4145B semiconductor parameter analyzer, and HP-4280 C-V measurement and so on. There are measured for X-ray diffraction patterns as deposition temperatures, and for AES depth profile to study the analysis of the compositions. In Ⅰ-Ⅴ measurements, leakage current was below 50 pA in the measuring range. The deposition conditions for the good c-axis orientation were 100 W of RF power, 200 ℃ of substrate temperature and 15 mTorr of working pressure.
Joo, Han-Yong,Lee, Jae-Bin,Kim, Hyeong-Joon The Korean Ceramic Society 1997 The Korean journal of ceramics Vol.3 No.4
Aluminum nitride(AIN) thin films were deposited on SiO$_2$/Si substrates by reactive sputtering for the application of SAW devices. The major deposition parameters such as pressure, nitrogen fraction, rf power, substrate distance were changed to find out the optimal condition for c-axis oriented thin films on an amorphous substrate. The effects of deposition parameters on the crystal structure, residual stress, and growth morphology of thin films were characterized by XRD, SEM, and TEM. The FWHM of (002) rocking curve of the films deposited at the proper condition was lower than 2.2$^{\circ}$(C=0.93$^{\circ}$). Cross-sectional TEM showed that self-aligned structure was developed just after slightly random growth at the initial stage. The frequency characteristics of test device fabricated from AIN thin films confirmed their piezoelectric property and applicability for SAW devices.