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Dark Conductivity in Semi-Insulating Crystals of CdTe:Sn
Viktor P. Makhniy,Sklyarchuk Valeriy Mykhailovyc,Yuri Vorobiev,Paul Horley 대한전자공학회 2015 Journal of semiconductor technology and science Vol.15 No.2
We prepared semi-insulating CdTe for radiation detectors by isothermal annealing of single crystals grown by Bridgeman technique in a sealed quartz container filled with Sn vapor. The resistivity of CdTe:Sn samples thus obtained was of order of 10<SUP>10</SUP> Ohm·cm at room temperature with electrons lifetime of 2´10<SUP>-8</SUP> s, which is appropriate for the applications desired. Analysis of electric transport characteristics depending on temperature, sample thickness and voltage applied revealed the presence of traps with concentration of about (4-5)´10<SUP>12</SUP> cm<SUP>-3</SUP> with the corresponding energy level at 0.8 ? 0.9 eV counted from the bottom of conduction band. The conductivity was determined by electron injection from electrodes in space charge limited current mode.