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Integration of a Low-k α-SiOC:H Dielectric with Cu Interconnects
Jeong-HoonAhn,Kyung-TaeLee,Byung-JunOh,Yong-JunLee,Seong-HoLiu,Mu-KyeungJung,Young-WugKim,Kwang-PyukSuh 한국물리학회 2002 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.41 No.4
Successful integration of an -SiOC:H dielectric with copper interconnects was achieved in this study, and the importance of their compatibility was emphasized for practical applications. Bowing of -SiOC:H dielectrics during conventional post-etch treatment deteriorated the gapfill properties and generated voids in the metals. The resistance value of Cu for -SiOC:H stacked structures was higher than that for uorinated SiO2 stacked structures due to bowing-induced voids. Moreover, the fail ratio of 0.12-m-wide copper interconnects for -SiOC:H stacked structures decreased with decreasing thickness of the TaN barrier metal, which was attributed to the overhang effect. Overhang-induced voids were eliminated in our study by lowering the TaN thickness. The bowing of -SiOC:H dielectrics was found to result from C stripping out from the dielectric itself; the damaged layer caused by oxygen-plasma treatment was peeled out during the wet-stripping process. By modifying the conventional process, i.e., by applying a hydrogen-based ashing process and a new chemical with little damage, we achieved a drastic improvement in the prole and reliability of -SiOC:H stacked structures.