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Kim, Myung Jun,Seo, Youngran,Kim, Hoe Chul,Lee, Yoonjae,Choe, Seunghoe,Kim, Young Gyu,Cho, Sung Ki,Kim, Jae Jeong Elsevier 2015 ELECTROCHIMICA ACTA Vol.163 No.-
<P><B>Abstract</B></P> <P>Through Silicon Via (TSV) technology is essential to accomplish 3-dimensional packaging of electronics. Hence, more reliable and faster TSV filling by Cu electrodeposition is required. Our approach to improve Cu gap-filling in TSV is based on the development of new organic additives for feature filling. Here, we introduce our achievements from the synthesis of choline-based leveler to the feature filling using a synthesized leveler. The choline-based leveler, which includes two quaternary ammoniums at both ends of the molecule, is synthesized from glutaric acid. The characteristics of the choline-based additive are examined by the electrochemical analyses, and it is confirmed that the choline-based leveler shows a convection dependent adsorption behavior, which is essential for leveling. The interactions between the polymeric suppressor, accelerator, and the choline-based leveler are also investigated by changing the convection condition. Using the combination of suppressor, accelerator, and the choline-based leveler, the extreme bottom-up filling of Cu at trenches with dimensions similar to TSV are fulfilled. The mechanism of Cu gap-filling is demonstrated based on the results of electrochemical analyses and feature filling.</P> <P><B>Highlights</B></P> <P> <UL> <LI> The choline-based leveler having two quaternary ammoniums was synthesized. </LI> <LI> The adsorption of this leveler with suppressor and accelerator was examined. </LI> <LI> Galvanostatic Cu bottom-up filling was achieved with three-additive system. </LI> <LI> The mechanism of gap-filling was elucidated based on the additive adsorption. </LI> </UL> </P>
Communication—Halide Ions in TEG-Based Levelers Affecting TSV Filling Performance
Kim, Myung Jun,Seo, Youngran,Oh, Jung Hwan,Lee, Yoonjae,Kim, Hoe Chul,Kim, Young Gyu,Kim, Jae Jeong The Electrochemical Society 2016 Journal of the Electrochemical Society Vol.163 No.5
<P>A leveler is one of the key additives for the defect-free filling of Through Silicon Via. The convection dependent behavior of a leveler is required to achieve successful gap-filling of Cu. Levelers occasionally contain charged functional groups and the counter anions. The charged functional groups obviously determine the characteristics of the leveler, and counter anions also influence the electrochemical behavior and Cu gap-filling. In this study, we synthesize levelers that have two quaternary ammoniums and different counter anions. The electrochemical behavior of the synthesized levelers and the effect of the counter anions on Cu gap-filling are described. (C) 2016 The Electrochemical Society. All rights reserved.</P>
간단한 구조의 고조파 정합 네트워크를 갖는 GaN-HEMT 고효율 Doherty 전력증폭기
김윤재(Yoonjae Kim),김민석(Minseok Kim),강현욱(Hyunuk Kang),조수호(Sooho Cho),배종석(Jongseok Bae),이휘섭(Hwiseob Lee),양영구(Youngoo Yang) 한국전자파학회 2015 한국전자파학회논문지 Vol.26 No.9
본 논문에서는 long term evolution(LTE) 통신을 위한 2.6 GHz 대역에서 동작하는 고효율 Doherty 전력증폭기를 설계하였다. 2차 및 3차 고조파 임피던스를 조정하기 위한 간단한 구조의 정합 네트워크를 통해 전력증폭기의 고효율 동작을 달성하였다. Doherty 전력증폭기는 다양한 측면에서 장점을 갖는 GaN-HEMT 소자를 이용하여 제작되었으며, 10 MHz의 대역폭 및 6.5 dB 첨두 전력 대 평균 전력비(PAPR)의 특성을 갖는 LTE downlink 신호를 이용하여 측정되었다. 평균 전력 33.4 dBm에서 13.1 dB의 전력 이득, 57.6 %의 전력부가효율(PAE) 및 ?25.7 dBc의 인접채널누설비(ACLR) 특성을 갖는다. This paper presents a Doherty power amplifier(DPA) operating in the 2.6 GHz band for long term evolution(LTE) systems. In order to achieve high efficiency, second and third harmonic impedances are controlled using a compact output matching network. The DPA was implemented using a gallium nitride high electron mobility transistor(GaN-HEMT) that has many advantages, such as high power density and high efficiency. The implemented DPA was measured using an LTE downlink signal with a 10 MHz bandwidth and 6.5 dB PAPR. The implemented DPA exhibited a gain of 13.1 dB, a power-added efficiency(PAE) of 57.6 %, and an ACLR of ?25.7 dBc at an average output power of 33.4 dBm.
위상잠금 적외선열화상을 이용한 플레이트 배면 감육결함의 요소 평가 최적화 기법
김준영(Chunyoung Kim),정윤재(Yoonjae Chung),김원태(Wontae Kim) 한국비파괴검사학회 2020 한국비파괴검사학회지 Vol.40 No.6
본 논문은 원전 격납건물 라이너 플레이트와 같은 금속 플레이트의 배면 감육결함에 대해 위상잠금적외선열화상(LIT) 기법을 활용한 비파괴검사에 있어서 요소 평가의 최적화 방법에 관한 연구이다. 연구를 위해 정량화된 Mockup 시험편을 개발하고, 4점 상관법과 Matlab 프로그래밍을 통한 결함 분석용 Tool을 개발하였다. 이를 통해 종래의 임의 시점 평가가 아닌, 전체 탐상시간에 대한 실시간 진폭/위상값 분석을 수행, 최적의 결함평가 시점을 선정하고, 그 평가 시점에서 1/2 위상값과 SNR 분석을 통한 결함의 폭과 깊이 Sizing 및 오차 수준 분석을 수행하였다. 그 결과, 플레이트 배면의 감육결함에 대해 LIT에 의한 최적의 탐상조건과 평가 시점을 선정할 수 있으며, 해당 평가 시점에서 감육결함의 최적 요소 평가 기준을 제시하였다. In this study, an optimization method for evaluating the essential factors of thinning defects on a plate backside, such as a containment linear plate, was investigated using a nondestructive testing method through lock-in thermography(LIT). A quantified mockup was developed, in which LIT under various heat conditions was applied, tools for defect analysis were developed using the four-point correlation method and MATLAB, and the full-time amplitude and phase value were calculated. In addition, the optimal conditions and evaluation times were determined, and detectability, resolution, defect sizing, and the error rate were analyzed using the signal-to-noise ratio and the full width at half maximum of phase. Based on the results, it was possible to suggest the optimal test conditions and evaluation time through LIT for thinning defects on the plate backside. Furthermore, the optimum essential factor for thinning defect sizing under the defect detection conditions was analyzed.