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Liang Dai,Weifeng Lü,Mi Lin 대한전자공학회 2020 Journal of semiconductor technology and science Vol.20 No.4
This study compares junctionless (JL) and inversion-mode (IM) dual-metal gate (DMG) nanowire transistors in terms of their performance fluctuations caused by work-function variation (WFV) through computer-aided-design simulation, To the best of our knowledge, this is the first of such an investigation. From the variability of the performance parameters, including the threshold voltage (VTH), transconductance (gm), saturation current (Isat), and subthreshold slope (SS), we observe that IM devices have stronger immunity to WFV than JL devices in terms of VTH and SS, whereas JL devices perform better in terms of Isat and gm from the relative fluctuation perspective. Moreover, the impact of WFV is found to become more severe as the ratio of the metal gate near the source to the entire metal gate decreases. In summary, our study can serve as a reference for optimizing the distribution of the two metals in the design of JL and IM DMG nanowire transistors.
Effects of Trapezoidal Fin Shape on Performance of Negative-capacitance FinFETs
Mengjie Zhao,Weifeng Lü,Ziqiang Xie,Mengxue Guo,Mi Lin 대한전자공학회 2022 Journal of semiconductor technology and science Vol.22 No.5
In this study, a negative-capacitance fin field effect transistor (NC-FinFET) with a varying trapezoidal fin shape is proposed. The effects of varying the width of the top fin on the performance of the trapezoidal NC-FinFET with different ferroelectric layer thicknesses are investigated in detail. Using the technology computer-aided design simulation, it was determined that the trapezoidal NC-FinFET has lower on- and off-state currents and a higher switching current ratio, as well as a higher threshold voltage, than a traditional rectangular NC-FinFET. Thus, the device demonstrates an improved subthreshold swing and drain-induced barrier lowering. Unlike a conventional trapezoidal FinFET, the variations in the parameter performance for an NC-FinFET exhibit non-uniform trends. This study provides a predictive estimation for trapezoidal fin-induced variations in an NC-FinFET at the early design stage.