http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Kim, Jinbum,Choi, Seongheum,Park, Taejin,Kim, Jinyong,Kim, Chulsung,Cha, Taeho,Lee, Hyangsook,Lee, Eunha,Won, Jung Yeon,Lee, Hyung-Ik,Hyun, Sangjin,Kim, Sunjung,Shin, Dongsuk,Kim, Yihwan,Kwon, Keewon American Chemical Society 2017 ACS APPLIED MATERIALS & INTERFACES Vol.9 No.1
<P>To synthesize a thermally robust Ni1-xPtxSi film suitable for ultrashallow junctions in advanced metal-oxide-semiconductor field-effect transistors, we used a continuous laser beam to carry out millisecond annealing (MSA) on a preformed Ni-rich silicide film at a-local surface temperature above 1000 degrees C while heating the substrate to initiate a phase transition. The melting and quenching process by this unique high-temperature MSA process formed a Ni1-xPtxSi film with homogeneous Pt distribution across the entire film thickness. After additional substantial thermal treatment up to 800 degrees C, the noble Ni1-xPtxSi film maintained a low-resistive phase without agglomeration and even exhibited interface flattening with the underlying Si substrate.</P>
Kim, Jinbum,Shin, Ilgyou,Park, Taejin,Kim, Jinyong,Choi, Seongheum,Lee, Sungho,Hong, Seongpyo,Lee, Hyung-Ik,Won, Jung Yeon,Kim, Taegon,Kim, Yihwan,Hwang, Kihyun,Lee, Hoo-Jeong,Kim, Hyoungsub Elsevier 2019 JOURNAL OF ALLOYS AND COMPOUNDS Vol.788 No.-
<P><B>Abstract</B></P> <P>Pulsed-laser annealing (PLA) was performed on a preformed Pt-doped Ni-rich silicide film (Ni<SUB>2</SUB>Si phase), and its microstructural and phase evolution were studied from submelting to melting condition by varying the laser power density (<I>P</I>). Vertically nonuniform compositional profile with an interfacial intermixing was observed under a solid state reaction regime (<I>P</I> < 400 mJ/cm<SUP>2</SUP>) due to a limited atomic diffusion. At higher <I>P</I> condition, melting/resolidification occurred with a continuous increase in the Si concentration, and various microstructures of the film evolved with increasing <I>P</I>: amorphous structure and nucleation/growth of NiSi and NiSi<SUB>2</SUB> phases form in that order on the Si interface. Lastly, by applying additional rapid thermal annealing on the polycrystalline mixture of NiSi and NiSi<SUB>2</SUB> phases formed by PLA, a uniform Pt-doped NiSi<SUB>2</SUB> film with strong epitaxial growth tendency on the Si(001) substrate and high thermal stability (up to 900 °C) was synthesized.</P> <P><B>Highlights</B></P> <P> <UL> <LI> Pt-doped Ni-silicides are formed using pulsed-laser annealing at various powers. </LI> <LI> Power-dependent solid- and liquid-state reactions yield various microstructures. </LI> <LI> Power-dependent microstructural and phase evolution paths are suggested. </LI> <LI> Additional rapid thermal annealing forms a thermally stable NiSi<SUB>2</SUB> film. </LI> </UL> </P>
Park, Taejin,Leem, Mirine,Lee, Hyangsook,Ahn, Wonsik,Kim, Hoijoon,Kim, Jinbum,Lee, Eunha,Kim, Yong-Hoon,Kim, Hyoungsub American Chemical Society 2017 JOURNAL OF PHYSICAL CHEMISTRY C - Vol.121 No.49
<P>Vertical MoO<SUB>2</SUB>/MoS<SUB>2</SUB> core–shell structures were synthesized on an amorphous surface (SiO<SUB>2</SUB>) by chemical vapor deposition at a high heating rate using a configuration in which the vapor phase was confined. The confined reaction configuration was achieved by partially covering the MoO<SUB>3</SUB>-containing boat with a substrate, which allowed rapid buildup of the partially reduced MoO<SUB>3–<I>x</I></SUB> crystals in an early stage (below 680 °C). Rapid temperature ramping to 780 °C enabled spontaneous transition of the reaction environment from sulfur-poor to sulfur-rich, which induced a sequential phase transition from MoO<SUB>3–<I>x</I></SUB> to intermediate MoO<SUB>2</SUB> and finally to MoO<SUB>2</SUB>/MoS<SUB>2</SUB> core–shell structures. The orthorhombic crystal structure of MoO<SUB>3–<I>x</I></SUB> contributed to the formation of vertical crystals on the amorphous substrate, whereas the nonvolatility of the subsequently formed MoO<SUB>2</SUB> enabled layer-by-layer sulfurization to form MoS<SUB>2</SUB> on the oxide surface with minimal resublimation loss of MoO<SUB>2</SUB>. By adjustment of the sulfurization temperature and time, excellent control over the thickness of the MoS<SUB>2</SUB> shell was achieved through the proposed synthesis method.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/jpccck/2017/jpccck.2017.121.issue-49/acs.jpcc.7b08171/production/images/medium/jp-2017-08171h_0005.gif'></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/jp7b08171'>ACS Electronic Supporting Info</A></P>