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Jung, Sungwook,Park, Joonhyuck,Bang, Jiwon,Kim, Jae-Yeol,Kim, Cheolhee,Jeon, Yongmoon,Lee, Seung Hwan,Jin, Ho,Choi, Sukyung,Kim, Bomi,Lee, Woo Jin,Pack, Chan-Gi,Lee, Jong-Bong,Lee, Nam Ki,Kim, Sungjee American Chemical Society 2017 JOURNAL OF THE AMERICAN CHEMICAL SOCIETY - Vol.139 No.22
<P>Photoswitching or modulation of quantum dots (QDs) can be promising for many fields that include display, memory, and super-resolution imaging. However, such modulations have mostly relied on photomodulations of conjugated molecules in QD vicinity, which typically require high power of high energy photons at UV. We report a visible light-induced facile modulation route for QD-dye conjugates. QD crystal violets conjugates (QD-CVs) were prepared and the crystal violet (CV) molecules on QD quenched the fluorescence efficiently. The fluorescence of QD-CVs showed a single cycle of emission burst as they go through three stages of (i) initially quenched off to (ii) photoactivated on as the result of chemical change of CVs induced by photoelectrons from QD and (iii) back to photodarkened off by radical-associated reactions. Multicolor on-demand photopatterning was demonstrated using QD-CV solid films. QD-CVs were introduced into cells, and excitation with visible light yielded photomodulation from off to on and off by nearly ten fold. Individual photoluminescence dynamics of QD-CVs was investigated using fluorescence correlation spectroscopy and single QD emission analysis, which revealed temporally stochastic photoactivations and photodarkenings. Exploiting the stochastic fluorescence burst of QD-CVs, simultaneous multicolor super-resolution localizations were demonstrated.</P>
Nanocrystalline-Silicon Thin-Film Nonvolatile Memory Devices for Display Applications
Sungwook Jung,Junsin Yi IEEE 2010 IEEE electron device letters Vol.31 No.9
<P>Nanocrystalline-silicon (nc-Si) nonvolatile memory (NVM) devices with oxynitride-nitride-oxide stack structures were fabricated with directly deposited nanocrystalline-silicon thin films using a low-temperature process. The fabricated bottom-gate nc-Si NVM devices have a wide memory window with a low operating voltage during programming and erasing due to an effective control of the gate dielectrics. In addition, after ten years, the memory device retains a memory window of over 67% between the programming and erasing states. These results demonstrate that these low-priced nc-Si NVM devices have a suitable programming and erasing efficiency for data storage under low-voltage conditions, in combination with excellent charge retention characteristics.</P>
Sungwook Jung,Jae-Uk Shin,Wancheol Myeong,Hyun Myung 제어로봇시스템학회 2015 제어로봇시스템학회 국제학술대회 논문집 Vol.2015 No.10
Wind turbines need annual inspections to investigate their states which may have damages, such as cracks, erosion, bonding defects, cavities and delamination. Wind blades inspection, however, is a difficult process which needs specialized equipment and well-trained technicians to perform it manually. In addition, most approaches to inspect require pre-installed infrastructures like ropes or other platforms, so they are not appropriate for a close investigation and has a low preference. To overcome these problems, the need for a wall-climbing robot has emerged. In this paper, we suggest a MAV (Micro Aerial Vehicle) type wall-climbing robot that has four rotors to make thrust force for flying and four wheels for wall-climbing so that it can fly, stick, and move on a vertical and non-flat surface. The overall inspection process has two parts; macro and micro inspections. The main concept was verified throughout simulations.