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Effective Channel Mobility of AlGaN/GaN-on-Si Recessed-MOS-HFETs
Kim, Hyun-Seop,Heo, Seoweon,Cha, Ho-Young The Institute of Electronics and Information Engin 2016 Journal of semiconductor technology and science Vol.16 No.6
We have investigated the channel mobility of AlGaN/GaN-on-Si recessed-metal-oxide-semiconductor-heterojunction field-effect transistors (recessed-MOS-HFET) with $SiO_2$ gate oxide. Both field-effect mobility and effective mobility for the recessed-MOS channel region were extracted as a function of the effective transverse electric field. The maximum field effect mobility was $380cm^2/V{\cdot}s$ near the threshold voltage. The effective channel mobility at the on-state bias condition was $115cm^2/V{\cdot}s$ at which the effective transverse electric field was 340 kV/cm. The influence of the recessed-MOS region on the overall channel mobility of AlGaN/GaN recessed-MOS-HFETs was also investigated.
Effective Channel Mobility of AlGaN/GaN-on-Si Recessed-MOS-HFETs
Hyun-Seop Kim,Seoweon Heo,Ho-Young Cha 대한전자공학회 2016 Journal of semiconductor technology and science Vol.16 No.6
We have investigated the channel mobility of AlGaN/GaN-on-Si recessed-metal-oxide-semiconductor-heterojunction field-effect transistors (recessed-MOS-HFET) with SiO2 gate oxide. Both field-effect mobility and effective mobility for the recessed-MOS channel region were extracted as a function of the effective transverse electric field. The maximum field effect mobility was 380 cm<SUP>2</SUP>/V·s near the threshold voltage. The effective channel mobility at the on-state bias condition was 115 cm<SUP>2</SUP>/V·s at which the effective transverse electric field was 340 kV/cm. The influence of the recessed-MOS region on the overall channel mobility of AlGaN/GaN recessed-MOS-HFETs was also investigated.