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Hamh, Sun Young,Park, Soon-Hee,Han, Jeongwoo,Jeon, Jeong Heum,Kahng, Se-Jong,Kim, Sung,Choi, Suk-Ho,Bansal, Namrata,Oh, Seongshik,Park, Joonbum,Kim, Jun Sung,Kim, Jae Myung,Noh, Do Young,Lee, Jong Seo Springer US 2015 NANOSCALE RESEARCH LETTERS Vol.10 No.1
<P>We investigate the surface states of topological insulator (TI) Bi<SUB>2</SUB>Se<SUB>3</SUB> thin films grown on Si nanocrystals and Al<SUB>2</SUB>O<SUB>3</SUB> substrates by using terahertz (THz) emission spectroscopy. Compared to bulk crystalline Bi<SUB>2</SUB>Te<SUB>2</SUB>Se, film TIs exhibit distinct behaviors in the phase and amplitude of emitted THz radiation. In particular, Bi<SUB>2</SUB>Se<SUB>3</SUB> grown on Al<SUB>2</SUB>O<SUB>3</SUB> shows an anisotropic response with a strong modulation of the THz signal in its phase. From x-ray diffraction, we find that the crystal plane of the Bi<SUB>2</SUB>Se<SUB>3</SUB> films is inclined with respect to the plane of the Al<SUB>2</SUB>O<SUB>3</SUB> substrate by about 0.27°. This structural anisotropy affects the dynamics of photocarriers and hence leads to the observed anisotropic response in the THz emission. Such relevance demonstrates that THz emission spectroscopy can be a sensitive tool to investigate the fine details of the surface crystallography and electrostatics of thin film TIs.</P>
Metal-supported high crystalline Bi<sub>2</sub>Se<sub>3</sub> quintuple layers
Jeon, Jeong Heum,Jang, Won Jun,Yoon, Jong Keon,Kahng, Se-Jong IOP Pub 2011 Nanotechnology Vol.22 No.46
<P>Atomically flat thin films of Bi<SUB>2</SUB>Se<SUB>3</SUB> were grown on Au(111) metal substrate using molecular beam epitaxy. Hexagonal atomic structures and quintuple layer steps were observed at the surfaces of grown films using scanning tunneling microscopy. Multiple sharp peaks from (003) family layers were characterized by x-ray diffraction measurements. The atomic stoichiometry of Bi and Se was considered using x-ray photoemission spectroscopy. Moiré patterns were obtained at the surfaces of one quintuple layer films due to lattice mismatch between Bi<SUB>2</SUB>Se<SUB>3</SUB> and Au. Our experiments suggest that Au is a reasonable material for electrodes in Bi<SUB>2</SUB>Se<SUB>3</SUB> devices. </P>