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이상진,성진경,김순호,배원태,Lee, Sang-Jin,Sung, Jin-Kyeong,Kim, Soon-Ho,Bae, Won-Tae 한국세라믹학회 2005 한국세라믹학회지 Vol.42 No.10
Sick house syndrome comes from VOCs that is harmful to health. To reduce VOCs, the cause of sick house syndrome, several materials have been developed and use. One of this materials, VOCs absorption paint was developed. VOCs absorption paint contains ceramic binder and zeolite powder. In the present study, eco-ceramics paint has been successfully fabricated by high-speed mixer using ceramic binder and filler powders. The eco-ceramics paint thus obtained have a deodorization rate with about 95.7$ \%$ and the bacteria decreasing rate is about 99.6$\%$. Moreover, the eco-ceramics paint showed excellent VOCs interception properties due to effect of ceramics layer and zeolite which exist in surface of paint.
이상진,장혜영,어은경,정구영,Lee Sang Jin,Jang Hye Young,Eo Eun Kyung,Jung Koo Young 대한임상독성학회 2003 대한임상독성학회지 Vol.1 No.1
Endosulfan, one of organochlorine insecticides, is $\gamma$-aminobutyric acid (GABA) antagonist. In sufficient dose, this pesticide lower the seizure threshold and produce CNS stimulation, with resultant seizures, respiratory failure, and death. In patients with endosulfan intoxication, the first manifestation of toxicity is largely a generalized seizure without prodromal signs or symptoms. So the management of airway and seizure control are essential for survival and prognosis of intoxicated patients. We report two cases of acute endosulfan poisoning who manifest 'status epilepticus' similarly, but have different prognosis.
이상진,변태호,Lee, Sang-Jin,Byun, Tae-Ho 한국건축역사학회 2002 건축역사연구 Vol.11 No.1
The recently published papers and essays regarding 'tectonic' bring us to rumination of its importance on comprehending modern architectural process. Many architectural theorists may seem to seek the substance of architecture through the discussion of 'tectonic' for the purpose of overcoming the dilemma of representation which can be easily found in modern architectural forms. Their emphasizing on its double-faced aspect as the manner of representation, that is semantic and aesthetic, may imply the significance of philosophical approach especially to the recent architectural phenomena. From this point, it ought to be meaningful to manifest etymological connection between the terms with semantic analysis and interpret the substance and ontological meaning of 'tectonic' referring Martin Heidegger's existential philosophy. Besides the works of Carlo Scarpa, that are known as the art of making, are exampled to prove the way how the ontological meaning of practical act is exposed on an artwork. The idea of 'tectonic' connotes not only technological aspect as construction of form and space, but also ontological aspect as joint or detail, that is the result of logos. The 'tectonic' means etymologically 'joint' having double-meaning structure, technology and aesthetics. It means 'detail' as minimum units of architectural form and as sites where making relationship or connection takes place in the way of ontological apprehension. The 'detail' as the place of innovation and invention implies the culture of an area, and expresses craftsmanship, which modem architecture buries in oblivion. This study aims to deviate from the aesthetical commercialization in which the modern architecture tends to fall, and further, propose the possible way to succeed traditional locality in an epistemological point of view.
활성화 이온빔 처리된 사파이어 기판상 MOCVD로 성장시킨 GaN의 열처리 효과
이상진,변동진,홍창희,김긍호,Lee, Sang-Jin,Byeon, Dong-Jin,Hong, Chang-Hui,Kim, Geung-Ho 한국재료학회 2001 한국재료학회지 Vol.11 No.3
사파이어 (0001) 기판의 활성화 이온빔 (RIB) 처리 후 MOCVD에서 성장한 GaN박막의 열처리를 통한 구조 변화를 살펴보고, 전기적 성질의 변화를 관찰하기 위하여 전기로를 이용하여 열처리를 하였다. 시편의 분석을 위하여 DCXRD, Hall, TEM을 사용하였다. 100$0^{\circ}C$에서 시간을 변화시키면서 열처리한 시편에서 DCXRD의 FWHM는 약 50 arc-sec 정도 감소하였고, Hall 이동도는 약 80$\textrm{cm}^2$/V.sec 정도 향상되었다. 가장 좋은 Hall 이동도를 보인 처리된 시편과 처리 전 시편의 TEM 비교 관찰에서 전위 밀도는 56~69% 정도 감소하였고 격자의 변형도 줄어들었다. 이것은 결정의 질과 전기적 성질 사이의 상관관계를 암시하며, 기판의 RIB 처리와 성장 후 적절한 열처리의 조합이 MOCVD로 성장시킨 GaN 박막의 특성을 개선시키는 것을 명확하게 보여준다. GaN is a key material for blue and ultraviolet optoelectronics. Postannealing process was employed to investigate the structural change and the effect on electrical property of the GaN thin film grown on reactive ion beam(RIB) treated sapphire (0001) substrate. Full width half maximum (FWHM) of double crystal x-ray diffraction (DCXRD) spectra and Hall mobility of the specimen were significantly changed depending on the postannealing time at $1000^{\circ}C$ in N2 atmosphere. FWHM of DCXRD reduced upto about 50arc-sec and the mobility increased about $80\textrm{cm}^2$/V.sec. The postannealed specimen with the best mobility was compared with sample without annealing by TEM. The former sample showed a decrease in the lattice strain and reduction of dislocation density by about 56~59%. This implies that there is a strong correlation between crystalline quality and the electrical property of the film. The Present results clearly show that the combination of RIB pretreatment and proper post annealing conditions results in the improved properties of GaN films grown by MOCVD.