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Saifullah Ahmed Saief,Mohammad Nurul Matin,Mohammad Mominur Rahman,Sang Gu Kang 한국작물학회 2010 한국작물학회 학술발표대회 논문집 Vol.2010 No.04
A comparative phenotypic study between bl2 and spl6 mutant wasperformed to characterize spot formation mechanisms of bl2 mutant. Small spots appeared at the seedling stage in bl2 and later it covered large round areas on the leaves whereas, relatively small red spots in parallel line on both leaf surfaces at late tillering stage were observed in spl6. Vegetative and reproductive growth was reduced due to lesion formation at early age in the mutants. Lower growth habit and agronomic trait value was observed in mutants as compared to wild type plants. Genetic segregation data among F2 population revealed that both mutants are recessive in nature. Mesophyll chloroplast was not found in spotted area which demonstrates the damage of chloroplast cell at spotted area due to cell death. Transmission electron microscopy also confirmed the chloroplast damage. Increased level of total chlorophyll and hydrogen peroxide content were observed till 45 days of growth after transplantation under natural environment and dropped at 60 days. Catalase activity was increased until 45 days and decreased at 60 days whereas very slight level difference in protein content was observed. However, increasing level of total ascorbic acid contents were found in spl6 and bl2 as compared with wild type till 60 days after transplantation. Higher expressions of OsPDI and OsGPX1 in bl2 spotted leaves were found whereas OsTPX expression was very low in the spotted leaf. (This research was supported by the National Research foundation of Korea, Grant 0070065).
Saifullah, Muhammad,Kim, Kihwan,Shahzad, Rauf,Gwak, Jihye,Cho, Jun-Sik,Yoo, Jin-Su,Yun, Jae Ho,Park, Joo Hyung Elsevier 2018 Solar Energy Materials and Solar Cells Vol.178 No.-
<P><B>Abstract</B></P> <P>Semitransparent (ST) Cu(In,Ga)Se<SUB>2</SUB> (CIGSe) solar cells based on the ultrathin absorbers with a bandgap of ~1.5eV are prepared on the tin-doped indium oxide (ITO) back electrode. In a solar cell with absorber thickness ≤300nm, incorporation of a sulfurized-AgGa (AGS) layer between the CIGSe layer and the ITO back contact was found to improve the device efficiency. This article explores the effect of the AGS layer on the CIGSe structure and CIGSe/ITO interface. Meanwhile, an ordered defect compound formation is observed in the AGS interlayered-CIGSe absorbers, the origin of which is the decrease in the (Ag+Cu)/(Ga+In) ratio arising from diffusion of In from the ITO to the absorber and the Ag/Ga ratio of 0.60 in the AGS layer. It is found that the AGS layer can significantly reduce the formation of the GaO<SUB>x</SUB> phase at the CIGSe/ITO interface. However, the increase in the deposition time of the CIGSe layer in the AGS interlayered-absorbers resulted in an increase in the GaO<SUB>x</SUB> interfacial (IF) layer thickness. The roll-over phenomenon in the illuminated J-V curves of devices based on AGS interlayered-absorbers became increasingly pronounced when the thickness of GaO<SUB>x</SUB> IF layer increased. The SCAPS (solar cell capacitance simulator) simulation results indicate that the reason for the roll-over effect in the illuminated J-V curves of the solar cells with AGS layers is the GaO<SUB>x</SUB> IF phase (n-type in nature). In light of the present results, possibilities to further enhance the conversion efficiency of ST CIGSe solar cells are also discussed.</P> <P><B>Highlights</B></P> <P> <UL> <LI> A sulfurized-AgGa (AGS) layer is inserted at Cu(In,Ga)Se<SUB>2</SUB> (CIGSe)/ITO interface. </LI> <LI> An ordered defect compound (ODC) was formed in AGS-interlayered CIGSe thin film. </LI> <LI> An AGS layer inhibits the formation of GaO<SUB>x</SUB> layer at the CIGSe/ITO interface. </LI> <LI> N-type nature of GaO<SUB>x</SUB> layer was responsible for the roll-over effect in AGS interlayered solar cells. </LI> </UL> </P>
Saifullah Hakro,Li Jinshan 한국산업안전보건공단 산업안전보건연구원 2019 Safety and health at work Vol.10 No.2
Background: Increasing workplace health-care perception has become a major issue in the world. Most of the health-related problems are faced because of the lack of health management instruments. The level of health care can be improved through workplace health well-being regulations. The aim of the present study is to formulate a conceptual model of physical checkup. Methods: This study applied conceptual theories and figures and used secondary data from articles and relevant websites for evaluating the validity of the study. Results: Annual health checkup increases health-care awareness perception of states, organizations, employees, and their families and manages the annual health record of employees, organizations, and states. Conclusions: Health care and awareness perception of states, organizations, employees, and families improves with annual health checkup, and annual health checkup also prevents unhealthy acts.
Optical Spectroscopic Analysis Techniques to Detect Elemental Profile of Human Teeth Dentine
Saifullah Jamali,Muhammad Aslam Khoso,Irfan Ali Sanjrani,Hussain Saleem,Tariq Ali Siyal,Muhammad Ashraf,Mansoor Ahmed Memon,Ghulam Murtaza,Zahid Hussain Arain,Zaheer Ahmed Ujjan,Muhammad Niaz Laghari International Journal of Computer ScienceNetwork S 2023 International journal of computer science and netw Vol.23 No.3
Numerous articles under the study and the examination of heavy metals in human teeth have been published in recent years. The heavy metal poisoning is a widespread issue emerged in toxicology area these days. It has been discovered that long-term exposure to heavy metals typically present in traces, in our everyday meals, drinking water, and in the environment as pollution causes heavy metal poisoning in human beings. Industrial effluents, Coal and Oil, as well as a variety of consumer items, such as cosmetics, can all cause this type of exposure. Teeth, which are often thought of as exoskeleton parts, store heavy metals with a high affinity and represent long-term exposure information. In this study, we have chosen and examined the sections of dentine instead, then examined the entire tooth. We have combined the work done on the examination of heavy metals in human teeth using several instrumental approaches e.g. "Optical Spectroscopic Techniques" to detect elemental profile of human teeth in the current study.
Acceleration of Data Encryption Standard Algorithm on GPU Using CUDA C
Saifullah, Yuseon Jung, and Inkyu Moon IT연구소 2013 정보기술융합공학논문지 Vol.3 No.1
Graphics processing units (GPUs) are powerful computational devices tailored towards the needs of the three-dimensional (3D) gaming industry for high-performance, real-time graphics engines. As the processing power of such GPUs increases, so does the possibilities for other, non-graphics related applications to be implemented on them. With the increase over the years of sensitive data that must be stored securely, the use of encryption techniques has become widespread. Block ciphers operate at a computational complexity, where computational complexity is a factor greatly dependent on the number of blocks and size of the data to be encrypted. This has caused many to look for improvements in the encryption algorithms. Here NVIDIA's CUDA language is used to implement data encryption standard (DES) algorithm to encrypt image that is divided into blocks of equal size. In this paper, we illustrate the acceleration of the DES algorithm for an image on GPU platform using CUDA C as a programming language.
Saifullah, M.,Ahn, S.,Gwak, J.,Ahn, S.,Kim, K.,Cho, J.,Park, J.,Eo, Y.,Cho, A.,Yoo, J. S. Royal Society of Chemistry 2016 Journal of materials chemistry. A, Materials for e Vol.4 No.27
<P>Different from conventional photovoltaics, building-integrated photovoltaics needs not only high performance but also a high degree of transparency. Nevertheless, the Cu(In, Ga)Se-2 (CIGS) solar cell has advantages in terms of the highest conversion efficiency and stability among all thin-film-based solar cells. The semitransparent (ST) CIGS solar cell using an ultrathin CIGS absorber on a transparent conducting oxide (TCO) experiences loss in fill factor and open circuit voltage due to the poor grain morphology and CIGS/TCO interface. Thus, these issues must be addressed to realize ST CIGS solar cells. Wide-bandgap (1.5 eV) submicron CIGS-based solar cells were prepared in this study unlike conventional CIGS with a bandgap of 1.2 eV, in order to enhance see-throughness. But such cells demonstrated low conversion efficiency due to the poor grain morphology and absence of back grading. Therefore, for the sake of improving grain morphology and to create back grading, a sulfurized-AgGa (AGS) layer was deposited between CIGS and the indium tin oxide (ITO) back contact. Ag from the AGS layer diffused throughout the absorber and thus ameliorated the grain morphology. However, Ga and S in the AGS layer remained confined near the back contact, therefore resulting in the creation of back grading. Consequently, a solar cell based on 230 nm thick CIGS modified with a 45 nm thick AGS layer exhibited efficiency of 5.94% with averaged visible transmittance over 25%. This is the highest reported efficiency for a ST CIGS solar cell with over 20% visible transparency. The CIGS solar cell based on this novel approach can be a competent candidate for building-integrated semitransparent photovoltaics applications.</P>
Saifullah, M.,Gwak, J.,Park, J.H.,Ahn, S.,Kim, K.,Eo, Y.J.,Yun, J.H. ELSEVIER 2017 Current Applied Physics Vol.17 No.9
<P>CuInSe2 (CISe) with a bandgap of 1.0 eV is the appropriate bottom layer material for the multi junction solar cell. CISe thin films have been prepared using the three-stage process, in which the substrate temperature (T-s) of the second and the third stage was varied from 490 to 580 degrees C. The preferred orientation of the CISe film changed from (112) to (220) as the Ts was increased from 490 degrees C to onward. CISe films had large and columnar grains at all values of T-s, but surface became increasingly smoother as the T-s was increased from 490 to 580 degrees C. Secondary ion mass spectrometry analysis revealed that Cd diffusion from CdS buffer layer to CISe layer was more when the preferred orientation was (220), which helped in the formation of homojunction inside CISe. Open circuit voltage increased upon increasing the T-s due to the increase in the Na concentration inside CISe. The conversion efficiency of the solar cells increased from 8.80 to 12.64% when the Ts was raised from 490 to 580 degrees C. (C) 2017 Published by Elsevier B.V.</P>