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IN SITU SOIL FLUSHING TECHNIQUE WITHOUT PRODUCING HYDRAULIC FRACTURING
박준범 中央大學校 建設環境硏究所 1995 環境科學硏究 Vol.6 No.-
As an emerging remediation technology for contaminated subsurface by organic contaminants, soil flushing is considered as one of the most effective methods applicable to in situ conditions without excavation of contaminated soils. In situ soil flushing using a high induced hydraulic gradient was studied for preventing undersirable hydraulic fracturing which can result in low remediation of a contaminated site. On the basis of the earth pressure theory, critical depth above which hydraulic fractures exist was calculated to be approximately twice the value of injection pressure head. Time required for remediating a contaminated site was also determined by steady-state pumping rate without producing fractures in the contaminated zone.
박준범,박규홍 대한상하수도학회 1997 상하수도학회지 Vol.11 No.2
Between 40,000 and 60,000 liters of light oil were spilled when an underground pipe broke at a newly constructed landfill site in coastal area, Korea. Methods were presented to examine the subsurface distribution of the contaminants in hydrocarbon-contaminated soil. As results, large quantities of oil and grease were found to have migrated horizontally at the site. Oil and grease plume at concentrations of 38-88 ㎎/㎏ was formed horizontally through silty sand with gravel fill and the vertical movement of the contaminants was thought to be limited to groundwater level between 2 and 4 m corresponding to sea water level. Right after finding the leakage area, the early action of excavation and pumping out the mixture of groundwater and oil was taken and it was proved to be very effective for preventing further contamination. Two months after the leakage, oil and grease in sea water sample near contaminated area was not detectable.
Numerical Modeling of Static Shear Behavior in Interfaces
Inn Joon Park,Chang Won Kwak,Jun Boum Park 한국지반공학회 2012 international journal of geo-engineering Vol.4 No.3
A constitutive model based on elasto-plasticity theory is modified and proposed here to describe the behavior of interfaces subjected to static loading conditions. The proposed model is developed in a hierarchical manner wherein a basic model describing simplified characteristics of the interfaces is modified by introducing different features, to model increasingly complex behavior of the interfaces. The parameters influencing interface behavior are identified using data from laboratory simple shear tests on sand-steel interfaces, Proposed model is verified with respect to comprehensive test data on interfaces with different roughness, normal loads and initial densities, A highly efficient algorithm is developed and modified to perform drill correction under constraint condition, This algorithm is used for the integration of constitutive relation for interfaces to perform back prediction, The proposed model far the interfaces is used in the context of the thin-layer element approach and is implemented in a nonlinear finite element code to solve a boundary value problem. The findings of this research have contributed to the understanding of the interface behavior in soil-structure interaction problems. The proposed model can simulate a number of important behaviors with respect to the interfaces.
DC 마그네트론 스퍼터링을 이용한 IZO 박막의 제조와 특성 연구
박창하(Chang-Ha Park),이학준(Hak-Jun Lee),김현범(Hyeon-Boum Kim),김동호(Dong-Ho Kim),이건환(Gun-Hwan Lee) 한국표면공학회 2005 한국표면공학회지 Vol.38 No.5
Indium zinc oxide (IZO) thin films were deposited on glass substrate by de magnetron sputtering. The effects of oxygen flow rate and deposition temperature on electrical and optical properties of the films were investigated. With addition of small amount of oxygen gas, the characteristic properties of amorphous IZO films were improved and the specific resistivity was about 4.8×10<SUP>-4</SUP> Ωㆍ㎝. Change of structural properties according to the deposition temperature was observed with XRD, SEM, and AFM. Films deposited above 300°C were found to be polycrystalline. Surface roughness of the films was increased due to the formation of grains on the surface. Electrical conductivity became deteriorated for polycrystalline IZO films. Consequently, high quality IZO films could be prepared by dc sputtering with O₂/Ar ? 0.03 and deposition temperature in range of 150-200°C; a specific resistivity of 3.4 × 10<SUP>-4</SUP> Ωㆍ㎝, an optical transmission over 90% at wavelength of 550 ㎚, and a rms value of surface roughness about 3Å.