광자에너지에 의한 TiN-Oxide 박막의 유전율 특성

정천옥,김병인,김창석 조선대학교 에너지.자원신기술연구소 2001 에너지·자원신기술연구소 논문지 Vol.23 No.2

VLSI require thinner dielectric film and also larger capacitance. Most of such VLS I have MOS structures. For the research on this requirement, MOS capacitors were fabricated on the silicon wafer in four different thickness groups by RF sputtering method and investigated on their electrical and optical characteristics by photon energy variation. SiO film is used as the insulating layer and TIN film is chosen as the barrier against the diffusion of Al which is the terminal connected by ohmic contact because TIN has the advantageous properties such as good thermal stability and very low diffusion rate in spite of it's relatively low specific resistance.

SrTiO₃ 박막의 유전특성에 미치는 Ti층의 영향

정천옥,김병인,김창석 조선대학교 에너지.자원신기술연구소 2001 에너지·자원신기술연구소 논문지 Vol.23 No.2

This study makes SrTiO₃with nonpolarity among ferroelectrics by RF sputtering as dielectric layer, produces thin film of Si+SrTiO₃and Si+Ti+SrTiO₃of MOS structure using Ti as buffer layer, measures and examines the electrical features with optical refractive index, absorption coefficient, electric permittivity, photon energy and as a result, ferroelectrics oscillation occurrs by the interaction within a film by light temperature and the absorption coefficient of thin film with Ti as buffer layer is increased. It is found that the peak of electric permittivity value of Ti+SrTiO₃thin film has low values and is appeared late and as dipole which is found in dielectric is shown, the experiment satisfies the theory. In the nature of electric permittivity by photon energy, imaginary value is higher and current variation slope of thin film of thickness SrTiO₃has lower values in reverse bias.

SrTiO_3 박막의 유전특성에 미치는 Ti층의 영향

정천옥,김병인,김창석 조선대학교 동력자원연구소 1997 動力資源硏究所誌 Vol.19 No.1

This study makes SrTiO₃ with nonpolarity among ferroelectrics by RF sputtering as dielectric layer, produces thin film of Si/SrTiO₃ and Si/Ti/SrTiO₃ of MOS structure using Ti as buffer layer, measures and examines the electrical features with optical refractive index, absorption coefficient, electric permittivity, photon energy and as a result, ferroelectrics oscillation occurrs by the interaction within a film by light temperature and the absorption coefficient of thin film with Ti as buffer layer is increased. It is found that the peak of electric permittivity value of Ti/SrTiO₃ thin film has low values and is appeared late and as dipole which is found in dielectric is shown, the experiment satisfies the theory. In the nature of electric permittivity by photon energy, imaginary value is higher and current variation slope of thin film of thickness SrTiO₃ has lower values in reverse bias.

鷄卵의 貯藏溫度와 貯藏期間에 따른 內部品質 變化에 關한 硏究

李容億,金春蓮 명지대학교 1979 明大論文集 Vol.12 No.-

This experiment was caried out investigating to decrease of egg quality according to various storage temperatures and holding periods. The results of this study which was obtained from 8 storage temperatures during 15 days were as follows. These data were identified that storaged eggs under 20 ℃ below could sustain nearly fresh eggs in egg weight during 15days.In albumin height there were decre asing aspects which showed inverse proportion in increasing temperatures and prol-ongation of holding times. and Haugh Unit which corelated closely with albumin height was calculated similar tendency to that of albumin height. When this unit was transformed from USCA degree, storaged eggs during 15 days at 5℃ were appeared AAdegree, at 10℃ and 15℃ A degree and at 30℃ above during 9 days B degree. Also this research was abserved that holding period influenced strongly to yolk index but storage temperature seemed not to correlated orderly with it.pH of albumin in holding time at high storage temperatures which caused to decay frach egg and increase carbon dioxide density seemed to bo decreased. In linear eqation of egg weight, albumin height and yolk index with holding times. Egg weight and albumin height were showed considerablly higher negative(-) regression coefficient according to prolongation of holding time under 25℃ above compared with that of 20℃ below.

광자에너지에 의한 TiN-Oxide 박막의 유전율 특성

정천옥,김병인,김창석 조선대학교 생산기술연구소 1997 生産技術硏究 Vol.19 No.1

VLSI require thinner dielectric film and also larger capacitance. Most of such VLSI have MOS structures. For the research on this requirement, MOS capacitors were fabricated on the silicon wafer in four different thickness groups by RF sputtering method and investigated on their electrical and optical characteristics by photon energy variation. SiO film is used as the insulating layer and TiN film is chosen as the barrier against the diffusion of Al which is the terminal connected by ohmic contact because TiN has the advantageous properties such as good thermal stability and very low diffusion rate in spite of it's relatively low specific resistance.

테녹시캄과 β-시콜로멕스트린 간의 고체분산체 형성에 의한 용출 증가

박옥선,전인구 동덕여자대학교 종합약학연구소 2001 동덕약학연구지 Vol.5 No.-

The purpose of this study is to investigate the interaction of tenoxicam with various cyclodextrins (CDs) in the aqueous solution and in solid state, and finally to formulate a tablet with enhanced dissolution rate. CDs used in solubility studies were α-, β- and γ -CD, 2-hydroxypropyl-β-CD (HPCD), sulfobutyl ether-β-CD (SBCD), dimethyl-β-CD (DMCD) and trimethyl-β-CD (TMCD). The effect of CDs on the solubility of tenoxicam was observed. Solid dispersions were prepared with β-CD using solvent evaporation and freeze-drying process and physical mixtures were prepared by trituration in a mortar. The ratios of drug to carrier were 1:1 and 1:2 molar ratio. These solid dispersions were evaluated by differential scanning calorimetry (DSC), Fourier-transform infrared spectroscopy (FT-IR) and dissolution studies. Solid dispersions were also formulated to tablets and then dissolution rates were compared with that of a commercial product. In aqueous solution, complex formation with α- and β-CD gives rise to Bs type solubility phase diagram, and DMCD, TMCD, HPCD and SBCD showed AL type diagrams. The solubility increase of tenoxicam was in the order of SBCD>γ-CD>β-CD>HPCD>DMCD>α-CD>TMCD. The presence of water soluble polymers such as povidone and hydroxypropyl methylcellulose in β-CD solution did not increase the solubility of tenoxicam. DSC and FT-IR studies confirmed the formation of an solid complex of tenoxicam with β-CD. Dissolution of solid dispersion was about 4-fold higher than that of drug alone and about 2-fold higher than that of physical mixture within 10 min at pH 1.2. As the ratio of carrier to drug increased, dissolution rate became faster. The dissolution rate of tenoxicam from the tablets prepared using freeze-dried solid dispersion at 1:2 molar raio was fast; more than 80% was dissolved within 15 min at pH 1.2. All tenoxicam tablets prepared using tenoxicam-β-CD solid dispersions showed more rapid dissolution rates than commercial tablets. Therefore, the solid dispersion technique is an effective method for increasing the dissolution rate of poorly water soluble tenoxicam. β-CD was thought to be a candidate carrier for preparing solid dispersion with tenoxicam.

石坂洋次郞의 文學作品에 對한 硏究

朴相翊,全玉河 조선대학교 인문학연구소 1981 外國文化硏究 Vol.4 No.1

「金魚」의 말미에서 금붕어를 쥐어죽이고 난 野村가 충족된 피로감에 젖어 있는데 대해서 「私(나)」는 「夜氣が、ほてつた顔を心地よく冷まし、解き放されたような身輕さが、指の尖端にまで感じられた。私は深い愛着の力を兩腕に籠めて、背中の重い荷物を一つ二つゆすり上げてみた」로써 대단원의 막을 내리고 있다. 여기에 石坂가 나 자신의 구제를 위하여 집필했다는 「若い人」에 앞서 이 「金魚」집필에서 이미 구제된 고백을 읽을 수 있을 것이다. 葛西적 파멸형 사소설이 조화형 사소설의 방법적 전진을 확인한 것이다. 이것은 사소설의 방법을 초월한 본격소설의 fiction의 방법체득이기도 했다. 「若い人」에 뒤이어 발표된 장편 「曉の合唱」(『主婦之友』1939.1~1941.1)에서 나온 여주인공 齊村昭子도 또한 江波惠子의 후신이란것도 大森郁之助씨가 지적한 바가 있으나 필자는 「曉の合唱」뿐만이 아니라 「若い人」이후의 石坂작품 중에 나온 대부분의 heroine이 江波惠子의 혈맥이라는 것을 말하고 싶으며 그것은 곧 葛西善臟의 혈통을 이어받았다는 생각을 굳혀 본다.

PbTiO₃ 강유전체 박막의 유전율 특성

김창석,정천옥,김병인 조선대학교 에너지.자원신기술연구소 2001 에너지·자원신기술연구소 논문지 Vol.23 No.2

This paper evaporates PbTiO₃layer thickness differently with RF sputtering method on Si Wafer(n-100). This study is performed to examine the characteristics of electric constant, photon energy and dielectric loss according to the thickness of PbTiO₃and increase the reliability and reproduction of PbTiO₃thin film. It is confirmed that the variation of electric constant by frequency resulted from the formation of particles within thin film, the particle size and the polarization on grain boundary. In conclusion dielectric loss depends on the value of imaginary number (ε2), polarizability falls zero(o) by resonance absorption and is close to 0 of tan8 value and Q value of dielectric loss.

SrTiO₃ 박막의 C-V특성에 미치는 Ti층의 영향

김병인,정천옥,이상일 조선대학교 에너지.자원신기술연구소 1997 에너지·자원신기술연구소 논문지 Vol.19 No.2

This study makes SrTiO₃with nonpolarity among ferroelectrics by RF sputtering as dielectric layer, produces thin film of Si/SrTiO₃/Al and Si/Ti/SrTiO₃/Al of MOS structure using Ti as buffer layer, measures and examines the electrical features with C-V as a result, ferroelectrics oscillation occurrs by the interaction within a crystal by light temperature and the absorption of thin film with Ti as buffer layer is increased. It is found that the peak of permittivity value of Ti/SrTiO₃thin film has low values and is appeared late and as dipole which is found in dielectric is shown, the experiment satisfies the theory. The thicker thin film is, the lower capacitance value can be and saturation is delayed, so the experimental results satisfy the general capacitance.

PbTiO₃강유전체 박막의 유전율 특성

김창석,정천옥,김병인 조선대학교 에너지.자원신기술연구소 1999 에너지·자원신기술연구소 논문지 Vol.21 No.2

This paper evaporates PbTiO_(3) layer thickness differently with RF sputtering method on Si Wafer(n-100). This study is performed to examine the characteristics of electric constant, photon energy and dielectric loss according to the thickness of PbTiO_(3) and increase the reliability and reproduction of PbTiO_(3) thin film. It is confirmed that the variation of electric constant by frequency resulted from the formation of particles within thin film, the particle size and the polarization on grain boundary. In conclusion dielectric loss depends on the value of imaginary number (ε_(2)), polarizability falls zero(0) by resonance absorption and is close to 0 of tanδ value and Q value of dielectric loss.